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  • 1
    Electronic Resource
    Electronic Resource
    LiTaO3 crystal periodically poled by applying an external pulsed field (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5481-5483 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of periodically poling LiTaO3 single crystal at room temperature by applying an external pulsed field is proposed. The relationship between the growth of inverted domains and switching current as well as switching time has been studied. The growth of inverted domains can be controlled by the duration of the pulsed field. The domain structure with period Λ(approximately-greater-than)8 μm has been fabricated in a 0.3-mm-thick plate of LiTaO3 by partial switching. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359250
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  • 2
    Electronic Resource
    Electronic Resource
    Study on the formation mechanism of a complex domain structure in LiNbO3 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4136-4138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A complex domain structure in LiNbO3 is fabricated by proton exchange followed by heat treatment. Domain inversion at the +c and −c faces as well as reinversion in the inverted region near the +c surface are observed experimentally. The proton and lithium concentrations are measured by secondary ion mass spectroscopy. It is found that the proton profile peaks away from the surface due to indiffusion and outdiffusion. The domain inversion mechanism is discussed. An internal electric field model is proposed which is based on the concentration gradient of proton and lithium deficiency. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359502
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  • 3
    Electronic Resource
    Electronic Resource
    High resolution transmission electron microscopy study on the microstructures of aluminum nitride and hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1489-1491 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum nitride (AlN) and hydrogenated aluminum nitride (AlN:H) films on Si substrate have been deposited by the radio frequency reactive magnetron sputtering. The microstructures of the two films have been examined and compared by transmission electron microscopy (TEM) and high-resolution TEM. In the growth of the AlN:H film, it has been observed that the amorphous phase is formed at the initial stage of deposition, and c-axis oriented crystallite nucleates at the amorphous layer. The lattice mismatch between the film and substrate and the stress in the film are reduced, and the film surface is smooth due to this amorphous phase. A schematic model explaining the growth of AlN and AlN:H films is proposed, and the reason for the easy formation of the amorphous phase in AlN:H film is discussed.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119945
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  • 4
    Electronic Resource
    Electronic Resource
    Second-harmonic generation of blue light in bulk periodically poled LiTaO3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 320-322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated a periodic domain structure in a 0.5 mm thick slab of LiTaO3 crystal by applying an external pulsed field at room temperature. Using a pulse dye laser with a pulsewidth of 8 ns and a repetition rate of 10 Hz, third-order quasi-phase-matched second-harmonic blue-light generation is demonstrated by free propagation of a 862.6 nm fundamental Gaussian beam in a 4 mm long LiTaO3 slab, with a single pulse energy of 0.072 mJ and an energy conversion efficiency of 5.7%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115431
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of single-domain layers in multidomain LiNbO3 crystals by proton exchange and quick heat treatment (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 408-409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies on the formation of single-domain layers in a multidomain z-cut LiNbO3 crystal plate by proton exchange followed by quick heat treatment were performed. It was found that the direction of the spontaneous polarization in the single-domain layer points to the inside of the plate. To explain this phenomenon, an internal electric field model was proposed which is related to the proton concentration gradient. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114038
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  • 6
    Electronic Resource
    Electronic Resource
    Calculation of the reaction field due to off-center point multipoles (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 481-492 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two general methods for calculating the reaction field generated by a set of off-center point multipoles in a spherical cavity are presented. The methods are a generalization of Kirkwood's original theory for an arbitrary charge distribution. A polytensor formulation, similar to that previously developed for direct multipole interactions, serves to organize the computation and allows straightforward extension to higher derivatives of reaction field energy and gradients of the potential. The computation is reduced to calculation of the Cartesian derivatives of biaxial harmonics. Recursive and explicit formulas are given for the calculation. As an example, the incorporation of reaction field effects in computation of induced dipole moments is discussed. The second procedure, the central multipole method, scales linearly in calculation time with the size of the system. Methods to obtain derivatives analytically based on this method are also described. Our developments allow use of reaction field energy terms with atomic multipole-based empirical potential energy functions. Both methods show particular promise for use in simulation of heterogeneous systems, such as biopolymers, where the remainder of the cavity can be filled explicitly with solvent. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474409
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  • 7
    Electronic Resource
    Electronic Resource
    Photoelectron imaging spectroscopy for (2+1) resonance-enhanced multiphoton ionization of atomic iodine produced from A-band photolysis of CH3I (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 7187-7193 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoelectron imaging spectroscopy has been applied to study on two-photon resonant third photon ionization of two states of atomic iodine (5p5 2P3/2 and 2P1/2) in the wavelength region 277–313 nm. The technique has yielded simultaneously both relative branching ratios to the four levels of I+(3P2, 3P0,1, 1D2 and 1S0) with 5p4 configuration and the angular distributions of outgoing photoelectrons. The product branching ratios reveal a strong propensity to populate particular levels in many cases. Several pathways have been documented for selective formation of I+(3P2), I+ (3P0,1) and I+(1D2) ions. In general, the final ion level distributions are dominated by the preservation of the ion core configuration of resonant excited state defined by the Jcl coupling scheme. Some deviations from this simple picture are discussed in terms of the configuration interaction of resonant states and the autoionization in the continuum. The photoelectron angular distributions are qualitatively similar, with a positive A2 anisotropy coefficient of 1.0–2.0 and negligible A4 in most cases, which suggests that higher-order Legendre terms are suppressed by the restriction of a maximum orbital angular momentum of ejected electron, 2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474958
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  • 8
    Electronic Resource
    Electronic Resource
    Square-well fluids confined in planar slits (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 3821-3822 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A simple perturbative approach, which was proposed by Choudhury and Ghosh, has been employed to predict the structural properties of confined square-well fluids and compared with the computer simulation. The calculated results show that the Choudhury–Ghosh approximation well describes the structural properties of confined square-well fluids compared with the computer simulation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473427
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  • 9
    Electronic Resource
    Electronic Resource
    Breakdown characteristics in InP/InGaAs avalanche photodiode with p-i-n multiplication layer structure (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 974-984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the breakdown voltages in InP/InGaAs avalanche photodiode (APD) experimentally and theoretically, based on the parameters of electric field distribution, carrier concentrations, thicknesses, and temperatures. According to the calculation, the breakdown voltage has its minimum point, w0, at each carrier concentration in charge plate and avalanche photodiode with very thin multiplication layer width will provide high gain bandwidth product. The devices having different multiplication layer width showed different breakdown voltages and temperature behaviors. We introduced newly defined temperature coefficient, γ, and found that γ's are linearly dependent on breakdown voltages at each temperature. From these results, the empirical formula which effectively describes the temperature dependence of breakdown voltages was obtained. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364225
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  • 10
    Electronic Resource
    Electronic Resource
    Phase transformation in amorphous silicon under excimer laser annealing studied by Raman spectroscopy and mobility measurements (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9064-9073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transformation of silicon from an amorphous phase to a polycrystalline phase by excimer laser annealing was investigated by means of Raman spectroscopy and electron mobility measurements. It was shown that the phase transformation was mainly governed by the energy density of the laser, and that when the density was high enough to evaporate the surface layer of the amorphous silicon, a latent state of the multiple irradiated sample was formed, where the Raman intensity exceeded that of the bulk crystal silicon and the electron mobility of the film became very high. This observation was explained by the pyramidal grain growth structure of the crystalline silicon. The amorphous component at the grain boundary was also observed in measured Raman spectra and it was shown that the presence of this phase had a significant influence on reducing the field effect mobility. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362640
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