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  • 1
    Electronic Resource
    Electronic Resource
    1.3 μm InAsP compressively strained multiple-quantum-well lasers for high-temperature operation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4119-4121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature operation of InAsP-based laser diodes at 1.3 μm has been realized according to guidelines of a large conduction-band-offset material (ΔEc) with a large optical confinement factor (Γ). Using photoluminescence excitation spectroscopy measurements, it was found that the conduction-band offset of InAs0.52P0.48P/InGaAsP is the half of the band-gap energy difference (0.5 ΔEg), which is larger than that of conventional quaternary material systems. A strain-compensation growth technique enabled the fabrication of a large number of wells for large Γ. For broad-area laser diodes, the maximum operating temperature increased as the number of wells increased from 4 to 15. In buried heterostructure lasers with ten wells, with high-reflectivity coating on both facets, continuous-wave lasing operation at temperatures up to 150 °C was achieved with a characteristic temperature of 59 K (30〈T〈70 °C) demonstrating the suitability of InAsP for high-temperature operation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359497
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  • 2
    Electronic Resource
    Electronic Resource
    A compact injector for a small triton accelerator : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 631-632 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a very compact 350-keV injector for a triton accelerator. Because of restrictive boundaries, the whole system has been optimized: for example, a disktron for the high-voltage power supply, a highly efficient gas recycling system on a platform, and an insulating cooling system. In the first step, the injector was operated with a duoplasmatron ion source. In test runs, the injector was charged up to 330 kV without any problems. To date, the injector has been used to accelerate hydrogen beam currents of ∼0.2 to 0.4 mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141941
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  • 3
    Electronic Resource
    Electronic Resource
    Hg content and thermal stability of the anodic sulfide films on Hg1−xCdxTe investigated by 30–40-MeV O5+ ion backscattering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 132-135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hg content of anodic sulfide films on Hg1−xCdxTe (MCT) were investigated for as-grown and heat-treated films by using 30–40-MeV O5+ ion backscattering. Heat treatments were performed in a vacuum for 60 min at various temperatures up to 300 °C for the samples with x=0.20 and up to 350 °C for the samples with x=0.30 and 0.35. A significant Hg content of about 15 at. % of Cd was found in the as-grown anodic sulfide film on MCT samples with x=0.20, 0.30, and 0.35. After heat treatment above 260 °C for x=0.30 and 0.35 and above 210–240 °C for x=0.20, the Hg atoms were removed from the films, and Hg deficient layers were formed near the interface region of the MCT crystal. This suggests that the residual Hg in the anodic sulfide films introduced during the sulfidization process plays an important role toward the degradation of the passivation properties of the sulfide film on MCT.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340480
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic migration and surface evaporation of Hg in Hg1−x CdxTe crystals observed by 40-MeV O5+ ion backscattering method (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1500-1503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dissociation and evaporation of Hg from the near-surface region of Hg1−xCdxTe crystals was investigated, up to several microns, by means of 40-MeV O5+ backscattering. Samples with x=0.18 and 0.32 were heat treated in a vacuum for 60 min at various temperatures up to 320 and 340 °C, respectively. The change of the backscattering spectra with the temperature of heat treatment indicated that the Hg atoms outdiffused partly from the near-surface region of the crystals at higher temperatures than 280 and 320 °C for x=0.18 and 0.32, respectively. This behavior of outdiffusion is in contrast to the case of HgTe crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336454
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  • 5
    Electronic Resource
    Electronic Resource
    Depth Profiling by Combined SIMS-ESDMS Analysis: a New Surface Analytical Technique (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 155-160 
    Details
    ISSN: 0142-2421
    Keywords: a new surface analytical technique ; SIMS ; ESDMS ; SIMS-ESDMS technique ; depth profiling ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Electron-stimulated desorption mass spectrometry (ESDMS), a new technique based on the mass analysis of ions desorbed by a high-energy (several keV) electron beam, has analytical features that complement SIMS. The ESDMS has high sensitivity in the surface analysis of both adsorbates and the first one or two monolayers of substrate constituents. The variations in ESDMS signal intensities and in the sampling surface depth with time were negligible even in a one-monolayer sample. Using this combined SIMS-ESDMS technique, depth profiling analysis was performed for several different metal layers deposited on wafers and for a boron-implanted wafer. The sample depth was changed by sputtering with an ion beam, and the surface analysis at each depth was done by ESDMS with the ion beam off. The ion profiles by SIMS-ESDMS closely coincided with the SIMS profiles. The SIMS-ESDMS technique should be particularly useful for thin layered samples, because the signal-to-noise ratio can be improved by accumulating the ESDMS signals for as long as required without changing the sampling depth under continuous bombardment by the electron beam. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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