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  • 1
    Electronic Resource
    Electronic Resource
    Bimolecular photoreaction of adsorbates: 2 HX→H2+X2 (X=Cl, Br) (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 598-600 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456460
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  • 2
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Mixture model description of the T-, P dependence of the refractive index of water' " [J. Chem. Phys. 115, 7795 (2001)] (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 7796-7797 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The valid range of the emphasized experimental data and need, in very precise comparisons, to compensate for the very small temperature shifts resulting from revisions in the accepted standard for the International Temperature Scale over the years, are acknowledged. However, it is emphasized that these corrections do not invalidate the approach and that the physical motivation underlying the mixture model analysis leads to physically meaningful fitting parameters; a result not found in any previous treatment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406530
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  • 3
    Electronic Resource
    Electronic Resource
    Mixture model description of the T-, P dependence of the refractive index of water (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 3157-3162 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this paper the temperature/pressure dependence of the refractive index of liquid water is analyzed using the two-state outer-neighbor mixed bonding structural model. So far, this theoretical model has been successful in reproducing, usually within the experimental uncertainty, the temperature/pressure dependence of the density, the viscosity, and the oxygen–oxygen pair correlation functions, in addition to the isothermal compressibility and isotope effects of this important substance. The philosophy of the present paper is to use the high accuracy of refractive index measurements to further test this model. It is shown that a very simple linear dependence with respect to temperature and pressure of the specific refractions LI and LII of the two contributing structural components in this two-state model is sufficient to give better than 5-decimal-point agreement with the experimental refractive index data at low pressures and temperatures between about −10 °C and +70 °C. The maximum in the refractive index between −5 °C and +5 °C is reproduced to an even better precision. Generally better than 4-decimal-point accuracy is achieved for higher pressures, where the experimental data are less accurately known. The pressure dependence considered here also allows the calculation of the isothermal piezo-optic coefficient as a function of temperature, which exhibits a minimum near 50 °C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331571
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  • 4
    Electronic Resource
    Electronic Resource
    Molecular-level description of temperature and pressure effects on the viscosity of water (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 10171-10176 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The steep non-Arrhenius temperature dependence at low temperatures of the shear viscosity of water and its backwards-sounding increased fluidity under pressure for temperatures below 33 °C are two of the anomalies of this liquid that have been known for a very long time. The purpose of the present paper is to show how these two important characteristics of water emerge quantitatively from an explicit two-state outer-neighbor mixture model that we have used to explain many other properties of this substance. It will be shown here that both of these viscosity anomalies are directly related to the steep variations with temperature and pressure of the fractional compositions of ice-Ih-type bonding and ice-II-type bonding in the two-state mixture. This compositional dependence has already been obtained in earlier work from the variations of the density and the isothermal compressibility of water with temperature. The viscosity analysis presented here thus helps to unify further all the properties of this liquid under a single, very simple structural characteristic. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480367
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  • 5
    Electronic Resource
    Electronic Resource
    Photochemistry of adsorbed molecules. IX. Ultraviolet photodissociation and photoreaction of HBr on LiF(001) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1361-1377 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dynamics of the UV photochemistry of HBr on LiF(001) has been studied by angle-resolved time-of-flight mass spectrometry in ultra-high vacuum. Single-photon photodissociation of adsorbed HBr at 193 nm resulted in photofragment translational energy distributions that differed from those produced in the gas-phase photolysis. Angular distributions of the fast H-atom photofragments peaked at 55±5° to the surface normal, consistent with a preferentially oriented adsorbate geometry. The angular distribution of atomic H obtained from photodissociation of HBr(ad) using polarized light indicated that a substantial fraction of the H atoms collided with the surface before leaving it. Two types of photoreactions in the adsorbed state were observed. Molecular hydrogen was formed in the photoinitiated abstraction reaction, H+HBr(ad)→H2(g)+Br, and its markedly non-Boltzmann translational energy distribution was found to have less energy than would be consistent with gas-phase experiments (performed elsewhere). Photoproducts from the bimolecular reaction 2HX(ad)→H2+X2, X=Cl, Br were also observed in the present study. This photoreaction, which did not depend on prior photodissociation of HX(ad), is thought to proceed through electronic excitation of an HX dimer in the adsorbed state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461118
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  • 6
    Electronic Resource
    Electronic Resource
    A novel integrated electric motor/pump for underwater applications : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5548-5550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a novel electric motor/pump system that combines an axial field, permanent magnet motor with a centrifugal pump. This system, unique because the motor permanent magnet rotor and pump impeller vanes are a single unit, provides a compact, reliable, low-noise, and high-power density electrically driven centrifugal pump suitable for underwater applications in which minimizing noise, vibration, and volume are major design objectives. Performance tradeoffs for the electromagnetic analysis were made by three-dimensional finite element analysis models in conjunction with a lumped parameter magnetic circuit model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362304
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  • 7
    Electronic Resource
    Electronic Resource
    Molybdenum deposition from the decomposition of molybdenum hexacarbonyl (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3035-3043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum metal deposition from the decomposition of Mo(CO)6 adsorbed on Si(100), Mo, and Cu surfaces was studied by x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, thermal desorption spectroscopy, and low-energy electron diffraction. Pyrolytic, photolytic, and electron-induced Mo(CO)6 decomposition were observed and indicated different dissociation mechanisms. Thermally decomposed Mo(CO)6 was found to leave metallic Mo in the presence of C and O. Electron-induced decomposition resulted in the formation of molybdenum carbide on the surfaces. Ultraviolet (UV) irradiation of adsorbed Mo(CO)6 induced new peaks in XPS and TDS spectra, suggesting the formation of an unsaturated molybdenum carbonyl adsorbate. Mo(CO)6 was found to form a multilayer on these surfaces at low temperatures, and desorb with zero-order kinetics. Although both adsorbate desorption and decomposition took place when the samples were heated, desorption was the dominant reaction path. UV irradiation of gaseous and coadsorbed Mo(CO)6 and O2 was also investigated. UV irradiation of the gas-phase mixture leads to MoO2 and MoO3 deposition; however, UV irradiation of coadsorbed Mo(CO)6 and O2 resulted in unsaturated molybdenum carbonyl. The effects of annealing and Ar+ bombardment on the Mo-deposited Si(100) surface are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342695
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  • 8
    Electronic Resource
    Electronic Resource
    ac bridge for high-temperature magnetic thermometry (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2232-2235 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified Hartshorn inductance bridge is used to follow changes in the magnetization of superparamagnetic samples in order to determine their average temperature. The thermometry is performed in the temperature range of 475–525 K. During routine experiments, the rms noise voltage in the bridge is approximately 300 nV when the primary coil is excited by a 200 mA rms current at a frequency of 47 Hz. This corresponds to a signal-to-noise ratio of 3000 and a temperature sensitivity of 0.015 K for typical samples studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141394
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  • 9
    Electronic Resource
    Electronic Resource
    The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 241-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoexcitation of silicon during low-fluence implantation with MeV Si and Ge ions is observed to suppress vacancy-type point-defect formation, as determined by in situ deep-level transient spectroscopy. The A-center formation after low-temperature implantation is extended over a wide temperature interval indicating that electrically inactive clusters, which emit vacancies during annealing, are formed in the end-of-range region during implantation at 85 K. The number of vacancies stored in these clusters is influenced by low-temperature in situ photoexcitation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124335
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  • 10
    Electronic Resource
    Electronic Resource
    Evolution of deep-level centers in p-type silicon following ion implantation at 85 K (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ deep-level transient spectroscopy measurements have been carried out on p-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon–oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200–230 K in epitaxial wafers, and at 200–300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon–oxygen pair. The relative concentration of this defect is ∼10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in n-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123519
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