ALBERT

Notes: We present a laser-target scaling model which permits approximate prediction of the dependence of ablation pressure, mechanical coupling coefficient, and related parameters in vacuum upon single-pulse laser intensity (I), wavelength (λ), and pulse width (τ) over extremely broad ranges. We show that existing data for vacuum mechanical coupling coefficient for metallic and endothermic nonmetallic, surface-absorbing planar targets follows this empirical trend to within a factor of 2 over 7 orders of magnitude in the product (Iλ(τ)1/2). The comparison we present is valid for intensity equal to or greater than the peak-coupling intensity Imax, where denseplasma formation mediates laser-target coupling. Mechanical coupling coefficients studied ranged over two orders of magnitude. The data supporting this trend represent intensities from 3 MW/cm2 to 70 TW/cm2, pulse widths from 1.5 ms to 500 ps, wavelengths from 10.6 μm to 248 nm, and pulse energies from 100 mJ to 10 kJ. With few exceptions, data approximating one-dimensional or planar expansions were selected. Previously, meaningful scaling of ablation pressure parameters with I, λ, τ was not possible because existing data concentrated in a small range of these parameters. Our own data, obtained in the low- and midrange of (Iλ(τ)1/2), completes the experimental picture. Since this new data was derived from five separate experiments with specialized character and purpose, detailed accounts of this work will appear separately. In this paper, we summarize the experimental conditions and selectonly those data which are relevant to the scaling issue. We find that laboratory-scale laser experiments can often give impulse coupling data which agree with results from much higher-energy experiments without much error, and at much lower cost. We review a theory of vacuum laser ablation, specialize it to a quantitative description of mechanical coupling, and show that the resulting model provides a simple physical description which comes quite close to the observed empirical trend. This is accomplished with minor elaborations of the theory as originally presented to account for the temperature dependence of plasma ionization states, while adhering to the premise that a simple and generally applicable treatment of laser impulse production should be available. The theoretical model can quantitatively predict vacuum ablation pressure foropaque targets without adjustable parameters to the factor-of-2 accuracy in which we are interested. Other published scaling models omit one or more of the important variables, lack broad applicability, or deviate more noticeably from the observed trend.

Notes: The ability to generate various ion species makes the multicusp plasma ion source an excellent candidate for maskless resistless lithography application. In this article, the mass spectra of both positive and negative ions for phosphorus, BF3, and oxygen multicusp plasmas are presented. It is shown that over 90% P+ ions are produced. The production of BF2+ and O2+ increases with increasing gas pressure, and decreases with increasing source power. With optimization of source operating parameters, approximately 85% BF2+ and over 90% O2+ have been achieved. © 2002 American Institute of Physics.

Notes: The polarity of GaN films grown using GaN and AlN buffer layers on sapphire substrates by molecular beam epitaxy were investigated by atomic force microscopy, hot wet chemical etching, and reflection high-energy electron diffraction. We found that the GaN films grown on high temperature AlN (〉890 °C) and GaN (770–900 °C) buffer layers invariably show Ga and N polarity, respectively. However, the films grown using low temperature (∼500 °C) buffer layers, either GaN or AlN, could have either Ga or N polarity, depending on the growth rate of the buffer layer. © 2001 American Institute of Physics.

Notes: The GaN films grown on buffer layers containing quantum dots by molecular beam epitaxy on sapphire substrates were investigated. The density of the dislocations in the films was determined by wet chemical etching and atomic force microscopy. It was found that the insertion of a set of multiple GaN quantum-dot layers in the buffer layer effectively reduces the density of the dislocations in the epitaxial layers. As compared to the dislocation density of ∼1010 cm−2 in the typical GaN films grown on AlN buffer layer, a density of ∼3×107 cm−2 was demonstrated in the GaN films grown with quantum dot layers. © 2002 American Institute of Physics.

Notes: The photorefractive properties and the phase stability of polymer composites are dependent on the detail of the alkyl chain substituent attached to the electro-optic dye within the composite. Photorefractive composites based on poly (N-vinylcarbazole) (PVK), sensitized with trinitrofluorenone (TNF) and mixed with a concentration of 47.5 wt. % of electro-optic dye have been tested for photorefractive performance. Two alternative azo dyes of identical molecular weight have been used to produce alternative composites; both dyes were modified to suppress spatial isomerism and incorporated an eight carbon alkyl chain at the electropositive end of the chromophore: either a straight octyl chain or a branched ethylhexyl chain was substituted. The reorientational enhancement of photorefractive performance is similar in the composites resulting from these dyes. The dye with a straight octyl chain led to a composite with improved holographic performance. The dye with a branched ethylhexyl chain led to a composite exhibiting lower diffraction efficiency, but with superior phase stability. A tentative explanation is offered for these differences based on the shape of the alkyl substituent and its effect on a trapping mechanism involving the dye molecules and the sensitisor anions in PVK:TNF-based photorefractive composites. © 1998 American Institute of Physics.

Notes: We report on a high optical quality, long-life guest-host photorefractive polymer composite which exhibits a 60% device steady-state diffraction efficiency and 120 cm−1 two-beam coupling gain, well in excess of its absorption of 3.5 cm−1, at a wavelength of 676 nm. In contrast to alternative composite materials of comparable high dye content, this performance has been achieved without unacceptably compromising device lifetime or ease of fabrication and storage. This is an efficient, easily prepared and comparatively stable polymer composite with device lifetimes under storage conditions already exceeding eight months and no indication of sample degradation with repeated holographic read–write cycles. © 1996 American Institute of Physics.