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  • 1
    ISSN: 1432-1424
    Keywords: Key words: Multidrug resistance — P-glycoprotein — Drug transport — Glycosylation — Vaccinia virus
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract. P-glycoprotein (P-gp), the product of human MDR1 gene, which functions as an ATP-dependent drug efflux pump, is N-linked glycosylated at asparagine residues 91, 94, and 99 located within the first extracellular loop. We report here the biochemical characterization of glycosylation-deficient (Gly−) P-gp using a vaccinia virus based transient expression system. The staining of HeLa cells expressing Gly− P-gp (91, 94, and 99N→Q), with P-gp specific monoclonal antibodies, MRK-16, UIC2 and 4E3 revealed a 40 to 50% lower cell-surface expression of mutant P-gp compared to the wild-type protein. The transport function of Gly− P-gp, assessed using a variety of fluorescent compounds indicated that the substrate specificity of the pump was not affected by the lack of glycosylation. Additional mutants, Gly− D (91, 94, 99N→D) and Gly−Δ (91, 94, 99 N deleted) were generated to verify that the reduced cell surface expression, as well as total expression, were not a result of the glutamine substitutions. Gly− D and Gly−Δ Pgps were also expressed to the same level as the Gly− mutant protein. 35S-Methionine/cysteine pulse-chase studies revealed a reduced incorporation of 35S-methionine/cysteine in full length Gly− P-gp compared to wild-type protein, but the half-life (∼3 hr) of mutant P-gp was essentially unaltered. Since treatment with proteasome inhibitors (MG-132, lactacystin) increased only the intracellular level of nascent, mutant P-gp, the decreased incorporation of 35S-methionine/cysteine in Gly− P-gp appears to be due to degradation of improperly folded mutant protein by the proteasome and endoplasmic reticulum-associated proteases. These results demonstrate that the unglycosylated protein, although expressed at lower levels at the cell surface, is functional and suitable for structural studies.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6620-6620 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiFeMox thin films, where 0〈x〈0.1, are considered for usage in high frequency magnetic sensors. Since the device manufacturing process requires that the thin film be exposed to temperatures above 200 °C, its thermal stability is an important criterion for device reliability.1 NiFeMox thin films, with a thickness of 75 nm and 0〈x〈0.1, were sputter-deposited on single crystal silicon wafers and their magnetic properties were measured after annealing for 2 h at various temperatures up to 350 °C. At lower Mo content, the anisotropy field Hk decreased with annealing temperature,2 whereas at higher Mo content, Hk showed an initial decrease and then an increase above 300 °C. With increasing temperature, the angle of dispersion θk showed a monotonous increase at lower Mo content. At higher Mo content, θk decreased at higher temperatures. At all Mo contents, the magnetostriction increased at higher temperatures. All as-deposited films had a residual tensile stress of about 200 MPa. At temperatures between 250 and 300 °C, the in situ tensile stress sharply increased. Above 300 °C, the stress started decreasing due to grain growth, the amount of decrease being dependent on the Mo content. The films were found to have much higher residual tensile stress (around 2000 MPa) after annealing, depending on the Mo content. The stress was calculated by measuring the wafer curvature with a laser. The microstructure was studied with transmission electron microscopy (TEM). ESCA indicated preferential oxidation of surface iron in NiFeMo during annealing. Changes in magnetics of NiFeMo were correlated to and explained by microstructural and compositional changes.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2429-2432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting compound YBa2Cu3O7−x (YBCO) and oxides of copper (CuO and mixture of CuO and Cu2O) have been examined by secondary-ion-mass spectrometry (SIMS). The results support the fact that two kinds of copper (from the consideration of bonding and valence state) exist in YBCO—one in the basal planes of charge reservoir layers and the other in the conduction layers. The bonding of Cu-O in the CuO2 conduction layer unit is similar to that in CuO. No Cu+++ secondary ions could be detected in the SIMS spectrum, in agreement with electron spectroscopy for chemical analysis, extended x-ray-absorption fine structure, and electron probe microanalysis measurements reported earlier. A plausible explanation has been given for this.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface analysis of bismuth-based high-Tc superconductors, like Bi2Sr2CaCu2O8+δ (Bi-2212) and Bi2Sr2Ca2Cu3O10+δ (Bi-2223) has been carried out by secondary ion mass spectrometry and x-ray photoelectron spectroscopy techniques. The results have been compared with that of similar measurements on Bi2O3, CuO, and CaCO3 samples so as to have detailed information about the surface binding energy as well as the chemical nature of the various individual components that exist inside these high-Tc compounds. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2523-2526 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh-vacuum (UHV) system for STM studies is described where a home-built STM is combined with a novel facility for in situ exchange of samples and tips. Technical details concerning the design of the sample and tip holders and the manipulation and storage equipment are given. For the preparation of organic films a compact evaporation source comprising two ovens with an excellent thermal insulation was constructed. First STM results of a coronene film on graphite and of tungsten diselenide are presented.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5055-5057 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin flop of synthetic antiferromagnetic pinned layers (SAF), under a magnetic field has been theoretically predicted and recently reported [J. G. Zhu and Y. Zheng, IEEE Trans. Magn. 34, 1063 (1998); J. G. Zhu, IEEE Trans. Magn. 35, 655 (1999)]. However, no experimental data have yet being reported to confirm the theoretical prediction. This article will provide direct experimental evidence to confirm the spin flop phenomenon in SAF layers. A spin valve, [CoFe/NiFe]/Cu/[CoFe(II)/Ru/CoFe(I)]/IrMn, was used to verify the spin flop in SAF layers. The exchange bias direction of CoFe(I)/IrMn was introduced by a magnetic annealing process at 225 °C with a field strength of Han(10 kOe) and the exchange bias direction was found parallel to the magnetic field. These samples serve as the reference for the remaining experiments. By magnetic annealing the reference samples at 225 °C with lower magnetic fields, we found that the magnetic field threshold for SAF spin flop is about 1 kOe. When the field is further increased, the spins of CoFe(I) and CoFe(II) scissor toward the applied magnetic field axis and the moment of the SAF reaches saturation when the applied field is equal to or greater than 10 kOe. Thus the above experiments demonstrate the flop behavior of the SAF. It also provides direct evidence that the exchange bias direction between a ferro/antiferromagnetic interface is determined by the magnetization of the ferromagnetic layer, not by the magnetic annealing field. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4138-4142 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co0.2Zn0.8Fe2O4 nanoparticles have been synthesized by the coprecipitation method. Nanoparticles with average particle size of 5–∼65 nm were obtained by sintering the samples from 393 to 1173 K. Magnetic measurements show that samples with particle size ≤13 nm are superparamagnetic above the blocking temperature TB. Samples with average particle size larger than 13 nm have a wide particle size distribution and show the presence of two magnetic phases: superparamagnetic and cluster glass. Cation distribution of the samples show that in the samples with particle size 〈13 nm Fe ions are distributed between the tetrahedral and octahedral sites of the spinel lattice but in the larger particle size samples the tetrahedral sites have very few Fe ions that form Fe–Fe clusters and hence the high temperature sintered samples show a mixed phase, consisting of superparamagnetic and cluster glass. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3740-3742 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Mössbauer study of Fe3−xAlxO4 and Fe3−xGaxO4 has been undertaken. Measurements at low temperatures in magnetic fields enabled us to better separate the Fe(A) and Fe(B) subspectra and to determine the cation distribution on tetrahedral and octahedral sites. Whereas Al up to x=1.4 shows a strong preference for B sites, giving rise to a normalization of the spinel structure with Fe2+ located mainly in tetrahedral sites, Ga distributes over both A and B places without tendency towards normalization at least below x(approximately-less-than)1.2.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2027-2029 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Paraelectric (Pb0.72La0.28)TiO3 or PLT(28) thin films were deposited on platinum coated Si substrates by the sol-gel technique. Two distinct groups of top metals, namely MT (Ni, Cr, and Ti, i.e., transition metals) and MN (Pt, Au, and Ag, i.e., noble metals) formed Ohmic and Schottky contacts, respectively. A Schottky barrier height of 1.83 eV at the Pt-PLT interface was determined. The conventional Schottky emission and Fowler–Nordheim tunneling equations were modified to account for the voltage dependence of the interfacial permittivity. It was found that Schottky emission, thermionic tunneling, and Fowler–Nordheim tunneling mechanisms were predominant in the voltage ranges of 2〈V〈7, 7〈V〈16, and V(approximately-greater-than)16, respectively. © 1994 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2487-2488 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 A(ring)) were observed on (111) Pt-coated Si substrates when heat treated at 450 °C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 A(ring) film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.
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