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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 876-882 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Spectral diffusion (SD) in polymethylmethacrylate (PMMA) doped with free-base tetraphenylporphine is investigated at 0.5–4.2 K on a time scale of 3–106 s via optical hole burning. Two contradictory results—within the framework of the two level system (TLS) model—are obtained. The first one is the absence of aging effects at temperatures near 4 K which puts the upper limit for the TLS relaxation times at tens of minutes. The second one is an intensive superlogarithmic SD on the whole time scale of the experiment, which is evidence for the presence of very slow relaxations, independent of the sample history on a time scale of up to two months. The results presented provide clear evidence of a deviation of SD behavior from the TLS model predictions at moderately low temperatures. The concept of structural relaxations is applied for a qualitative interpretation of the experimental data. © 2000 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 143-147 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The formulas for accidental coincidence corrections published recently by DeVolpi are found to be in error and, in particular, to conflict with the results of Monte Carlo simulations and with various published exact formulas. It is shown that the traditional first-order approximate formulas are valid both for the conditions assumed by their authors, and also, at low count rates, for the conditions used by DeVolpi.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 8486-8495 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: These experiments and complementary electronic structure calculations seek to probe the early dissociation dynamics of N2O4 excited in the strong 186 nm ultraviolet absorption band. Laser photons of 199.7, 203, and 205 nm are used to dissociate N2O4 molecules expanded in a free jet. The emission from the dissociating molecules is dispersed in a spectrometer and collected with an optical multichannel analyzer (OMA). We observe a strong progression in ν3, the N–N stretching mode, consistent with electronic structure calculations and a previous observation of N–N bond fission leading to NO2 photoproducts in this band. We also observe emission to combination bands in ν4, the torsion, and ν5, the out-of-phase antisymmetric NO2 stretch, which we attribute to vibronic coupling to a σσ* excited state configuration. Analysis of our data allows for an assignment of the torsional frequency of N2O4. Around 200 nm nitric acid, nitromethane, and N2O4 all exhibit a similar absorption to an adiabatic surface that changes electronic character from πnb,OπNO2* at short O2N–R (R=CH3, OH, NO2) internuclear distances to nσ* at extended internuclear distances. We compare our present emission spectra of N2O4 with previous emission experiments on nitromethane to understand how the character of the Franck–Condon region of the excited states in these two molecules differ. © 1999 American Institute of Physics.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reduction of contact and series resistances in an n-type InP/InGaAs heterostructure by a multiple-energy Si implantation is described. AuGe/Au was used as an n contact metallization on the InP top layer. The contacts and the implanted layers were electrically characterized. With an electron concentration of 3×1018 cm−3 corresponding to a sheet resistance of 15.6 Ω/(D'Alembertian) a contact resistance of 0.026 Ω mm was obtained. The application to a junction field-effect transistor leads to a significant improvement of the device characteristics with the transconductance increasing from 64 to 140 mS/mm due to reduced series resistances.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2288-2295 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A line beam electron gun based on the Pierce gun type was developed. The line cathode was realized by a directly heated tungsten rod. The temperature distribution along the tungsten rod was simulated numerically. The simulation shows a flat temperature across 2/3 of the cathode length and it agrees with appropriate measurable parameters. The beam profiles of the electron gun perpendicular to the line direction were examined as a function of electrical and geometrical parameters: The space-charge distribution in front of the cathode was found to be responsible for the shape of the beam profile. The shape of the beam profile is weakly influenced by the acceleration to the anode. The heating current induced voltage drop along the cathode was found to be responsible for the nonuniform emission in line direction. A model for the emission behavior of the line beam electron gun was developed. The model is based on the results of the measurements and on a numerical simulation of the potential distribution in the area between Pierce reflectors and anode. The emission model shows a solution to homogenize the emission by a suitable variation of geometrical parameters in line direction. A linear variation was realized in experiment which enables a uniform emission across 2/3 of the cathode length. The beam profile is adjustable by a bias voltage between the cathode and the Pierce reflectors.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1235-1241 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report the combination of a high-pressure sample chamber and a stable, nonscanning, angle-dispersive Fabry–Perot interferometer allowing the rapid measurement of inelastic light scattering from acoustic phonon modes in solid and liquid samples at high pressure. The primary components of the apparatus are a (i) narrow frequency gas ion laser, (ii) a solid or air-spaced etalon, (iii) a multichannel charge coupled device detector, and (iv) a large volume, high-pressure cell. The fundamental principle of this spectrometer is based on the angular dispersion of light through an etalon, whereupon the multiple-order frequency dispersed spectrum can be acquired with an array detector. Typical acquisition times are less than 1 s using low to moderate laser power. © 2002 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 171-173 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A concept to electrically control the scattering of light is introduced. The idea is to embed noble metal nanoparticles in an electro-optical material such as a liquid crystal in order to induce a spectral shift of the particle plasmon resonance by applying an electric field. Light scattering experiments on single gold nanoparticles show that spherically shaped nanoparticles become optically spheroidal when covered by an anisotropic liquid crystal. The two particle plasmon resonances of the optically spheroidal gold nanoparticles can be spectrally shifted by up to 50 meV when electric fields of more than 10 kV/cm are applied. © 2002 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1058-1062 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of inhomogeneously grown rough silver films have been analyzed on the basis of reflectance measurements. Data have been recorded within the wave number range 50 cm−1〈λ−1〈50 000 cm−1. The results are compared with compact and fairly smooth films, made from the same metal. Rough films reveal very low reflectance and high absorptivity values of nearly 1, at wave numbers (approximately-greater-than)200 cm−1. The reflectance of these films is peaking at the bulk plasma resonance hvp of silver at 3.87 eV. Smooth compact films, in contrast, show a pronounced minimum at the same energy. Based on an effective medium approach and available literature data, the dielectric function (DF) and absorption coefficient have been calculated. For rough films, the real part of the DF remains positive within the whole spectral range, but is negative for compact films below hvp, in agreement with published data. The calculated DF of the inhomogeneously grown films fully resembles the experimental observations. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 236-238 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the contribution of polar optic phonons to the inelastic scattering rate for an electron traversing semiconductor heterojunctions. In typical geometries, a dramatic reduction in scattering rate compared to the bulk value is found for a limited range of electron energies. This effect is related to spatial separation of initial and final electron wave functions either side of the heterojunction caused by quantum mechanical reflection at the interface. The influence of this phenomenon on the performance of devices, such as unipolar hot-electron transistors, is discussed.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 849-849 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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