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  • National Academy of Sciences  (14)
  • American Institute of Physics (AIP)  (12)
  • 1995-1999  (26)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 5 (1995), S. 609-612 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noise in spontaneous respiratory neural activity of the neonatal rat isolated brainstem–spinal cord preparation stimulated with acetylcholine (ACh) exhibits positive correlation. Neural activity from the C4 (phrenic) ventral spinal rootlet, integrated and corrected for slowly changing trend, is interpreted as a fractal record in time by rescaled range, relative dispersional, and power spectral analyses. The Hurst exponent H measured from time series of 64 consecutive signal levels recorded at 2 s intervals during perfusion of the preparation with artificial cerebrospinal fluid containing ACh at concentrations 62.5 to 1000 μM increases to a maximum of 0.875±0.087 (SD) at 250 μM ACh and decreases with higher ACh concentration. Corrections for bias in measurement of H were made using two different kinds of simulated fractional Gaussian noise. Within limits of experimental procedure and short data series, we conclude that in the presence of added ACh of concentration 250 to 500 μM, noise which occurs in spontaneous respiratory-related neural activity in the isolated brainstem–spinal cord preparation observed at uniform time intervals exhibits positive correlation. © 1995 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6268-6273 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to investigate wafers of both 4H–SiC and 6H–SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1×1018 and 1.2×1019 cm−3. Significant coupling of the A1 longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data are compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon–plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2073-2077 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic Raman scattering from nitrogen defect levels in SiC is seen to be significantly enhanced with excitation by red (633 nm, 1.98 eV) or near-IR (785 nm, 1.58 eV) laser light at room temperature. Four nitrogen peaks are observed in 6H–SiC (380, 430, 510, and 638 cm−1) and three peaks in 4H–SiC (about 400, 530, and 570 cm−1). The peaks in the 4H–SiC spectrum are seen to shift to lower frequency with increasing nominal doping concentration. Raman spectra taken at low temperature in 6H–SiC reveal differences between wafers and Lely grown platelets by the appearance of several additional peaks. The origin of the resonant enhancement is the near-IR absorption band associated with the green color characteristic of n-type SiC. These results demonstrate that the laser wavelength is a key parameter in the characterization of SiC by Raman scattering. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 5112-5133 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This is the first in a series of papers which derives the matrix elements of the spin-dependent U(2n) generators in a multishell spin–orbit basis, i.e., a spin adapted composite Gelfand–Paldus basis. The advantages of such a multishell formalism are well known and well documented. The approach taken exploits the properties of the U(n) adjoint tensor operator denoted by Δij(1≤i,j≤n) as defined by Gould and Paldus [J. Chem. Phys. 92, 7394 (1990)]. Δ is a polynomial of degree two in the U(n) matrix E=[Eij]. The unique properties of this operator allow the construction of adjoint coupling coefficients for the zero-shift components of the U(2n) generators. The Racah factorization lemma may then be applied to obtain the matrix elements of all the U(2n) generators.In this paper we investigate the underlying formalism of the approach and discuss its advantages and its relationship to the shift operator method of Gould and Battle [J. Chem. Phys. 99, 5961 (1993)]. The formalism is then applied, in the second paper of the series, to calculate the matrix elements of the del operator in a two-shell spin–orbit basis. This immediately yields the zero-shift adjoint coupling coefficients in such a basis. The del-operator matrix elements are required for the calculation of spin densities in a two-shell basis. In the third paper of the series we derive the remaining nonzero shift adjoint coupling coefficients all of which are required for the multishell case. We then use these coupling coefficients to obtain formulas for the matrix elements of the U(2n) generators in a two-shell spin–orbit basis. This result is then generalized, in the fourth paper, to the case of the multishell spin–orbit basis. Finally, we demonstrate that in the Gefand–Tsetlin limit the formula obtained is equivalent to that of Gould and Battle for a single-shell system. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6982-6989 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The low-lying states of Ge2 and Ge−2 are probed using negative ion zero electron kinetic energy (ZEKE) spectroscopy. The ZEKE spectrum of Ge−2 yields an electron affinity of 2.035±0.001 eV for Ge2, as well as term energies and vibrational frequencies for the low-lying states of Ge−2 and Ge2. Specifically, we observe transitions originating from the anion 2Πu(3/2) ground state and 3Σ+g excited state (Te=279±10 cm−1) to several triplet and singlet states of Ge2. Term values and vibrational frequencies are determined for the Ge23Σ+g ground state, the low-lying 3Πu excited state (Te=337 cm−1 for the 2u spin–orbit component), and the somewhat higher lying 1Δg, 3Σ+g, and 1Πu states. We also determine the zero-field splitting for the X0+g and 1g components of the 3Σ+g state and the splittings between the 2u, 1u, and 0±u spin–orbit components of the 3Πu state. Detailed comparisons are made with Si2 and Si−2. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 3770-3776 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An embedded cluster model, employing a point charge field to correctly account for the electrostatic effect of the surrounding lattice, is used to study the adsorption of water and methanol at zeolite Brønsted acid sites. The effects of both the point charge field and electron correlation (studied at the second order Møller–Plesset (MP2) and density functional theory (DFT) levels) are reflected in the predicted substrate structures, binding energies and 1H NMR shifts. Both result in enhanced substrate binding to yield good agreement with experiment, and an increased degree of proton transfer to the substrate, an effect particularly evident in the case of methanol. There is a suggestion from a comparison with measured 1H NMR shifts that this effect is somewhat overestimated by the model used here. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 2757-2764 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Anion photoelectron spectra of Ge−n, n=2–15, have been measured using an incident photon energy of 4.66 eV. In addition, the spectra of Ge−2, Ge−3, and Ge−4 have been measured at photon energies of 3.49 and 2.98 eV. From these spectra the electron affinity of the corresponding neutral cluster has been determined. Vibrational frequencies and term values for several electronic states of Ge−2 and Ge−3 have been determined. Vibrational structure in the 3B3u excited state of Ge4 has been resolved using zero electron kinetic energy (ZEKE) photoelectron spectroscopy. The assignment of the spectra of Ge−3 and Ge−4 is facilitated by a comparison to the similar spectra of Si−3 and Si−4, respectively. The spectra of the larger clusters, Ge−n, n=5–15, are characterized by many broad structureless features which indicate the presence of multiple electronic transitions. Several of these were assigned based on comparison with previous ab initio calculations on germanium and silicon clusters. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 1395-1406 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoelectron spectra of Sin− (n=3–7) have been measured at several photodetachment energies. The anions were created using a pulsed discharge source, resulting in considerably colder clusters than in earlier work. As a result, vibrationally resolved spectra were obtained for larger clusters and more electronic states than in previous studies of these species, leading to more accurate electron affinities, term energies, and vibrational frequencies for the ground and excited electronic states of the neutral clusters. The assignments of excited states were aided by ab initio calculations and photoelectron angular distributions. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 6612-6617 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The tautomeric equilibrium involving the amine and imine forms of creatinine are studied theoretically in both the gas phase, the aqueous environment, and the solid state. High level ab initio calculations predict the imine form to be preferred in the gas phase by 2.0 kcal mol−1. In the aqueous environment, both continuum and explicit solvent models predict the amine form to be the most stable, with solute polarization being an important contributing factor. An embedding procedure is used to model solid state effects when again the amine is preferred, in agreement with experimental crystallographic studies. The predicted solid state molecular geometry is compared to the experimental structure. © 1997 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 7645-7652 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Vibrationally resolved photoelectron spectra of SinH− (n=2–4) have been measured at a photodetachment wavelength of 355 nm (3.493 eV). The electron affinities of Si2H, Si3H, and Si4H are 2.31±0.01, 2.53±0.01, and 2.68±0.01 eV, respectively. Vibrational frequencies for the neutral ground states and a low-lying state of Si2H are also determined. Assignment of the electronic states and vibrational frequencies is facilitated by comparison with ab initio calculations. The calculations show that the H atom in Si4H and Si4H− is bonded to a single Si atom, in contrast to the bridged structures found for the smaller clusters. These calculations, along with photoelectron energy and angular distributions, yield a definitive assignment of the ground and nearly degenerate first excited states of Si2H. © 1998 American Institute of Physics.
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