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  • Wiley-Blackwell  (51)
  • American Institute of Physics (AIP)  (39)
  • MDPI Publishing  (14)
  • American Association for the Advancement of Science (AAAS)
  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen cyanide laser interferometer of the JFT-2M tokamak and feedback stabilization of the beat frequency using a microcomputer (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1290-1295 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A hydrogen cyanide laser interferometer with three vertical chords was installed in the JFT-2M tokamak for electron density measurement. The optical arrangment of the interferometer is a Mach–Zehnder type and its structure is mechanically independent of the JFT-2M machine in order to suppress the mechanical vibration. Two HCN lasers are employed for direct reading of the chord averaged electron density by means of beat modulation method. The beat frequency between two HCN lasers is stabilized at a constant frequency by a feedback circuit using a microcomputer. A combination of short dielectric waveguides and TPX lenses is employed to compensate the refraction and divergence of the laser beam. It was shown experimentally that the interferometric measurement of the electron density was scarcely affected by the mechanical vibration of the interferometer and the refraction of the probing laser beam up to n¯e=6×1019 m−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138590
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  • 2
    Electronic Resource
    Electronic Resource
    Study of inhomogeneity of supercritical water by small-angle x-ray scattering (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 4203-4211 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Small-angle x-ray scattering (SAXS) experiments using synchrotron radiation were carried out for supercritical water along isotherms at the temperatures T=660.0, 661.5, 663.0, 677.0, and 687.5 K, from a gaslike density region to a liquidlike one, including an intermediate density region. The high-temperature and high-pressure sample holder for SAXS measurements suitable for supercritical water was redesigned for more precise measurements. The curves illustrating the density dependence of density fluctuations and correlation lengths show a slight shift of the maximum from critical isochore. The deviations become larger with increasing temperature. The results for the density fluctuations and correlation lengths for supercritical water are compared with those for supercritical CO2 and CF3H at T/Tc=1.02 and 1.06. The comparison allows us to draw the conclusion that the behavior in the long-range inhomogeneity of water in the supercritical state is in discord with the ordinary behaviors for other molecular substances. Density fluctuations in water are also compared with those of Ar and Hg calculated thermodynamically by use of the equations of state. The correlation of the symmetry between the contour of density fluctuations and the vapor–liquid coexistence curve is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480965
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  • 3
    Electronic Resource
    Electronic Resource
    Correlation time of density fluctuation for supercritical ethylene studied by dynamic light scattering (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 4985-4992 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time dependence of density fluctuation for neat supercritical ethylene (C2H4) is investigated by dynamic light scattering at various densities in isothermal conditions of reduced temperatures Tr=T/Tc=1.02, 1.04, and 1.06. Time correlations of the density fluctuation for all thermodynamic states decay as single exponential functions with the time constant of submicrosecond. Critical slowing down of diffusive motions is observed in the time domain, and the correlation time of the density fluctuation becomes maximum at the extension of the gas–liquid coexistence curve on the P–T phase diagram. It is revealed that the time dependence of the density fluctuation just corresponds to the magnitude of static density fluctuation obtained by small-angle x-ray scattering measurements. By measuring correlation times as a function of scattering angle, the critical slowing down is thermodynamically discussed. It is elucidated experimentally that the critical slowing down of diffusive motions considerably correlates to the increase of specific heat capacity, the decrease of the thermal diffusivity, and rotational relaxation time in the supercritical state of the neat fluid. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452112
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  • 4
    Electronic Resource
    Electronic Resource
    Annealing effects for implanted Y-Ba-Cu-O superconductors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 936-938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing effects of Y-Ba-Cu-O superconductor thin films implanted by 200-keV Ne+ have been investigated. Transition temperature (Tc) end points for 0, 1×1014, 1×1015, and 1×1016 ions/cm2 doses are 75, 71, 62, and 16 K, respectively. The film implanted at 1×1017 ions/cm2 dose indicates nonsuperconductors. The c-lattice constant increases were observed for the implanted films. It is confirmed that the superconducting characteristics for film, which is implanted at 1×1016 ions/cm2 dose, are recovered by annealing in O2 atmosphere at 940 °C for 4 h. Moreover, microcrystal growth caused by annealing the implanted film was observed on the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341897
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  • 5
    Electronic Resource
    Electronic Resource
    Weak flux pinning at grain boundaries in Ag sheathed Ba2YCu3O6+x tapes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 396-398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter is concerned with the mechanism controlling the transport critical current measured at 4.2 K. The current densities increased with decreasing the oxide layer thickness of Ag sheathed tapes and reached 1010 A/cm2 at 15 T for the tape with a 15-μm-thick layer. The magnetic field dependence of critical current density in the region between 0.5 and 15 T can be explained in terms of a modified model of the theory by E. J. Kramer [J. Appl. Phys. 44, 1360 (1973)], based on the weak flux pinning along grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102423
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  • 6
    Electronic Resource
    Electronic Resource
    Recording experiments in magneto-optical disks using ultrathin Co/Pt and Co/Pd media (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical media using ultrathin Co/Pt and Co/Pd films were prepared on 2P (photopolymer) glass substrates with a double-layer disk structure. Thermomagnetic writing was successfully made in the magneto-optical disks by the relatively low laser power above 3 mW. The values of the C/N ratio were 50 dB for the Co/Pt disk and 45 dB for the Co/Pd disk at a bit length of 5 μm. Clear and regular bit domains were observed even in the shorter recorded bit length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102568
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  • 7
    Electronic Resource
    Electronic Resource
    Maskless InP wire formation on planar GaAs substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 499-501 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross-sectional dimensions were obtained in a single growth process. Cross-sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111109
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature synchrotron-radiation-excited etching of silicon dioxide with sulfur hexafluoride adsorption (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4680-4685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultralarge-scale integration circuits now require innovative microfabrication processes in order to achieve gigabit-scale integration. One approach is to use soft x rays, because they can give excellent spatial resolution by their short wavelength and high-reaction selectivity by core-electron excitation. Synchrotron-radiation (SR) -excited etching of SiO2 and Si is studied from the viewpoints of pattern replicability and analysis of etching selectivity between two layers. Deep-submicron patterns of SiO2 are formed by cooling the specimen with liquid N2 and adsorbing SF6 reaction gas during SR irradiation. Photon-stimulated desorption ions from SF6-adsorbed SiO2 and Si surfaces are first investigated. As a result, ion species such as SiF+n and SO+n, which are etching products from the surface, are obtained only from SiO2, and this selective etching of SiO2 is also investigated by x-ray photoelectron spectroscopy. In this selective etching mechanism, constraint of Si-etching by passivation of photofragment S+ ions is most likely. The higher selectivity of this reaction can be used not only for bulk SiO2 etching, but also for Si-surface cleaning by eliminating native oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355921
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  • 9
    Electronic Resource
    Electronic Resource
    Factors suppressing transport critical current in Ag/Bi2223 tapes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7877-7882 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural factors limiting the critical current density Jc have been investigated for the silver-sheathed Bi2223 tapes prepared by the powder-in-tube technique. In a hierarchy among them, which factor is the most effective in determining Jc depends on how extensively each of them occurs. The Jc was found to increase when the volume fraction of 2223 phase increases, suggesting the importance of the connectivity among 2223 grains. The Jc also increased with decreasing amount of residual carbon. The temperature and magnetic field dependences of Jc indicated characteristics of Josephson currents through superconducting–normal–superconducting barriers. After a discussion based on the alternative current limiting mechanisms proposed up to now, it is suggested that the homophase grain boundary limits the Jc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362398
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  • 10
    Electronic Resource
    Electronic Resource
    Estimation of strength distribution of Nb3Sn in multifilamentary composite wire from change in superconducting current due to preloading (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 440-445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bronze-processed multifilamentary Nb3Sn superconducting composite wires were loaded and then unloaded at room temperature, resulting in a large change in the critical current (Ic) and the upper critical magnetic field (Hc2) at 4.2 K: the Ic and Hc2 increased, reaching maximum and then decreasing with an increasing applied stress level. The changes in Ic and Hc2 below the loading stress to cause breakage of the Nb3Sn were described well from the viewpoint of the change in residual strain in Nb3Sn. When the applied stress was high enough to cause breakage of the Nb3Sn, the Ic was reduced seriously. From the reduction in Ic in such a case, the strength distribution of Nb3Sn was estimated by using the Weibull distribution function. The result indicated that the shape parameter for the Weibull distribution was 12 and the average strength was 1.02 GPa in the present samples. From the calculation of the residual strain at 4.2 K in combination with the estimated strength distribution of Nb3Sn, the change in Ic at 4.2 K as a function of applied stress at room temperature could be described well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355277
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