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  • American Institute of Physics (AIP)  (42)
  • International Union of Crystallography  (27)
  • American Chemical Society (ACS)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3816-3817 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) of porous Si that has been hydrogenated in boiling water has been investigated. The PL intensity is observed to increase with a concurrent shift of the spectral peak to shorter wavelengths. These effects can be explained in terms of size effects in the microstructures of porous Si. The spectral changes after annealing and after rehydrogenation are similar to the behavior of a-Si:H. We conclude that hydrogen plays an important role in the luminescence of porous Si.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5343-5347 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photodiodes with thin (∼0.2 μm) InGaAs light absorbing layers placed inside much wider (∼2 μm)InP depletion regions were studied to understand the interaction of hole trapping at the InGaAs/InP heterojunction interface and carrier transit effects. In the three devices studied, the absorbing region was located (i) near the n+ side, (ii) in the center, and (iii) near the p+ side of the depletion region. The optical impulse response of these devices consists of a short pulse and a long exponential tail with a bias-dependent time constant. The relative charge in the fast and slow components could be measured and it was shown that the charge ratios correspond to the fraction of the depletion region transited before and after trapping. These studies show that electron trapping times are much shorter than hole trapping times, and that fast photodetection can occur even in the presence of a severe hole trapping problem if the distance between the trap and the p+ side of the depletion region is much smaller than the total depletion width.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 8379-8384 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The high resolution infrared emission spectra of gallium hydride and gallium deuteride have been recorded with a Fourier transform spectrometer. There were 1045 lines observed including those from the v=1→0 to v=7→6 bands for the 69GaD and 71GaD species and v=1→0 to v=4→3 bands for the 69GaH and 71GaH species. Dunham Yij's for each isotopomer were obtained by fitting the data set of each isotopomer separately to the Dunham energy levels of the X 1Σ+ electronic ground state. The mass-reduced Dunham Uij's were determined using two independent methods. In the first fit the Uij's constants were determined by the traditional method where all the constants were treated as adjustable parameters and determined statistically. In the second fit the Uij's which satisfied the condition j〈2 were treated as adjustable parameters and the remaining constants were fixed by constraints imposed by the Dunham model. In order to predict the positions of transitions with v's and J's much higher than those observed the entire data set was fit directly to the eigenvalues of the Schrödinger equation containing a parameterized internuclear potential energy function.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8204-8205 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new electrically tunable photodetector is described. Wavelength tunability has been achieved by utilizing the quantum confined Stark effect in a low-Q vertical cavity to shape the exciton absorption characteristic. The absorption peak has been tuned approximately 17 nm with a bias of 8 V. Results are compared with theoretical calculations. © 1994 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3641-3644 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results from an investigation of the effects of variations in layer thicknesses during the growth of semiconductor Bragg mirrors on their reflectivity spectra. Different types of variations are investigated and an effort is made to point out the sources of such errors in a typical growth process. It is expected that this study will shed light on the critical control parameters for very highly reflecting mirrors and help the interpretation of the measured spectra from a finished growth run and the identification of the possible sources of deviations from the ideal structure. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2514-2516 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient integration of multijunction photovoltaic cells requires current matching or voltage matching. To match voltages it is necessary to achieve complete electrical isolation between the component cells. Previously, electrical isolation could only be achieved with hybrid, mechanically stacked structures. We report the growth, fabrication, and characterization of an AlxGa1−xAs/GaAs photovoltaic cell with an epitaxial isolation layer of semi-insulating GaAs grown by molecular beam epitaxy. This will facilitate the integration of subcells that absorb different portions of the solar spectrum onto a single substrate.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 161-163 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously it has been shown that resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (∼75%), low dark current, low bias voltage (〈15 V), and low multiplication noise (0.2〈k〈0.3). We describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1992-1994 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a very low dark current (∼57 pA at 10 V reverse bias) metal–semiconductor–metal photodetectors fabricated on GaN epitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The photodetectors exhibit the typical sharp band-edge cutoff, with good responsivity. There is indication of a photoconductive gain mechanism. We also performed a Medici simulation to establish an effective area for current density calculations. © 1997 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3734-3736 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well known that the gain-bandwidth product of an avalanche photodiode can be increased by utilizing a thin multiplication region. Previously, measurements of the excess noise factor of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption and multiplication regions indicated that this approach could also be employed to reduce the multiplication noise. This letter presents a systematic study of the noise characteristics of GaAs homojunction avalanche photodiodes with different multiplication layer thicknesses. It is demonstrated that there is a definite "size effect'' for multiplication regions less than approximately 0.5 μm. A good fit to the experimental data has been achieved using a discrete, nonlocalized model for the impact ionization process. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3123-3124 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a photodetector with a narrow spectral linewidth (approximately 2 A(ring)) and a useful electrical-tuning range of 35 A(ring). The photodetector features a horizontal resonant cavity in which feedback is achieved using distributed feedback reflectors. The optical and electrical paths in this photodetector are orthogonal. Consequently, this normal incidence horizontal resonant cavity photodetector is completely integrable into wavelength division demultiplexing and other optoelectronic integrated circuits with a potential for high speed operation. © 1996 American Institute of Physics.
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