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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of epitaxial yttria-stabilized zirconia/Si interface by ion beam channeling (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8130-8132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yttria-stabilized zirconia (YSZ) films which have high crystalline quality and no dislocation near the YSZ/Si interface, have been epitaxially grown on Si(100) in spite of the relatively large lattice mismatch between YSZ and Si. The formation of the SiO2 layer at the YSZ/Si interface during the YSZ deposition takes an important part as a buffer layer in the epitaxial growth of YSZ films on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347465
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  • 2
    Electronic Resource
    Electronic Resource
    Magneto-optic spectra of the A 2Σ+–X 2Πi transition of OH (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 176-182 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We investigated the resonant magneto-optic spectra of the electronic band A 2Σ+–X 2Πi of the OH radical. The theoretical analysis was made under the condition that OH radicals were subjected to an externally applied magnetic field, which was oriented in a direction longitudinal (the Faraday configuration) or transverse (the Voigt configuration) to the optical path. Light interacting with the OH radicals was assumed to be elliptically polarized. The polarization change caused by the magnetically induced optical anisotropy of the OH radical was calculated as a function of the frequency and the ellipticity of the incident light, the orientation of the polarization analyzer, and the number density of the OH radicals. Experiments were carried out in the Voigt configuration using a narrow-band tunable dye laser as a light source. The observed profiles of the Voigt-effect signal for the rotational lines of the various branches agreed with theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459589
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  • 3
    Electronic Resource
    Electronic Resource
    Controlling garnet film composition by magnetic-field-controlled radio frequency magnetron sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6776-6778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To find a way to control the compositional change in Bi-substituted garnet during sputtering, we studied the effects of controlling the cathode magnetic field. The magnetic-field-controlled rf magnetron sputtering method that we developed can create a garnet film whose composition is the same as that of the sputtering target. When we deposited a film of Bi-substituted Dy iron garnet–ferrite (Bi2DyFe4GaO12) by this method, there was no compositional change between the target and the film even after a long sputtering process. Therefore, this sputtering method is effective at suppressing compositional change during the film formation process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372838
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  • 4
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of a sputtered Bi-substituted Dy–Fe garnet-ferrite/hematite bilayer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5106-5108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing was performed after a Bismuth-substituted Dy iron garnet-ferrite (Bi2DyFe4GaO12) was deposited on a quartz glass substrate having a hematite underlayer, and the effect of the hematite underlayer on the magneto-optical characteristics of the garnet ferrite film was evaluated. The presence of the underlayer greatly improved the magneto-optical effect of the garnet film, but the amount of improvement depended on the hematite phase. Big improvement was obtained using underlayer phases that are easily crystallized, i.e., Fe3O4 and γ-Fe2O3 which have a spinel structure, but not with α-Fe2O3 which has a corundum structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369092
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  • 5
    Electronic Resource
    Electronic Resource
    High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4249-4253 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS and ZnMgS layers have been grown onto GaP substrates by molecular beam epitaxy (MBE). The key parameters of the growth are a high substrate temperature and a high sulfur (S) beam pressure. The S beam pressure was typically 1×10−2 Pa, which was more than one order of magnitude larger than in conventional MBE of ZnS. Using the high S beam pressure, large ZnS growth rate of 0.3–1.0 μm/h could be obtained even at 490 °C. The growth rate was limited by the Zn supply. Optimization of the S beam pressure reduces the full width at half maximum (FWHM) of the (400) double-crystal x-ray rocking curve (DCXRC). For a 2.1-μm-thick ZnS layer the width can be reduced to 400 arcsec. The low temperature photoluminescence (PL) spectra show sharp excitonic emissions including the free exciton emission. ZnMgS layers were grown onto ZnS buffer layers. The ZnMgS layers as well show good crystal and optical qualities. The FWHM of DCXRC of the 1.5-μm-thick Zn0.83Mg0.17S layer is 650 arcsec, which is comparable to the FWHM of a ZnS layer of similar thickness. The low temperature PL of the ZnMgS layer is dominated by a strong excitonic emission. The band gap of Zn1−xMgxS is estimated from reflection spectra. For x=0.20, the band gap is 3.974 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373061
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  • 6
    Electronic Resource
    Electronic Resource
    Status of ion sources for the Heavy Ion Medical Accelerator HIMAC : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 962-964 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Heavy Ion Medical Accelerator in Chiba (HIMAC) at National Institute of Radiological Sciences (NIRS) is the first heavy-ion accelerator complex dedicated to cancer therapy. HIMAC is equipped with two kinds of ion sources. The PIG ion source is an indirectly heated cathode type, which is operated with a very low-duty factor. The ECR ion source has a single closed ECR zone with 10 GHz microwaves. Both sources realize good stability and reproducibility with easy operation, and satisfy the requirements for radiotherapy. They have been successfully used for clinical trials since June of 1994, and several tens of cancer patients have already been treated with 290–400 MeV/u carbon beams. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146784
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  • 7
    Electronic Resource
    Electronic Resource
    Polarization measurement of SR from a helical undulator using a quarter-wave plate for a wavelength of 12.8 nm : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1920-1922 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: At a wavelength of 12.8 nm, polarization states of nominally circularly polarized light emitted from a helical undulator and monochromatized by a grating monochromator were measured (KEK-PF BL-28A). With a transmission-type multilayer quarter-wave plate and a multilayer mirror polarization analyzer mounted on a beamline ellipsometer, all polarization parameters of the circularly polarized SR at various conditions were determined. The best degree of circular polarization after the grating monochromator was found to be as high as 0.95. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145758
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  • 8
    Electronic Resource
    Electronic Resource
    Longitudinal impedance tuner using new material FINEMET (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2988-2992 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We designed an impedance tuner consisting of an inductive material, FINEMET, to cancel the space charge impedance in the longitudinal direction. It was installed in the KEK Proton Synchrotron (PS) main ring. We observed the frequency shift of the coherent quadrupole oscillations and inferred the shift of the incoherent synchrotron oscillation. The total reactive impedance can be estimated as the coefficient between the shift and the beam intensity. The measured impedance is reduced from −j2475Ω to −j1182Ω by the impedance tuner which consists of 12 pieces of FINEMET cores. We demonstrated that the space charge impedance is compensated by the impedance tuner. This is the first time for FINEMET to be equipped with an accelerator component. One may think that the characteristics of FINEMET deteriorate under an environment with strong radiation generated by unavoidable beam loss. We have proved that the radiation dose not affect FINEMET even with a total neutron dose of 1.83×1012(n cm−2), which is considered to be the highest dose of the main ring. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149859
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of annealing, using a plasma-excited chemical vapor deposition SiN film as a cap, on the carrier density of AlGaAs/GaAs heterostructures and Si-doped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4401-4406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate how the mobility and carrier density of AlGaAs/GaAs two-dimensional electron gas are influenced by the fabrication process with plasma-excited chemical vapor deposition (plasma-CVD) SiN film. These properties are greatly reduced by annealing with plasma-CVD SiN film as a cap but are restored by reannealing after removing the SiN film. We further use capacitance-voltage measurements to investigate the influence of this same process on a more simplified structure, Si-doped GaAs layer. Annealing with a plasma-CVD SiN film changes the defect density of Si-doped GaAs in two, temperature dependent ways: annealing below 380 °C reduces deposition damage, and annealing above 300 °C produces new defects, which might be caused by the film stress. These new defects can be reduced by reannealing after removing the SiN film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359846
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical transport properties and confinement potential analysis of buried AlGaAs/GaAs quantum wires (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2330-2335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried wires with lateral potential barriers provided by AlGaAs/GaAs heterointerfaces have been fabricated by wet etching and metalorganic chemical vapor deposition regrowth. Burying the wire was proven to enhance the electrical transport properties; for example, it decreased the critical width and increased the subband energy separation. Two-dimensional simulation using the Poisson equation was performed to obtain the potential profile of both as-etched and buried wires. The quantum energy levels corresponding to the lateral confinement were calculated for the obtained potential profiles. The calculated energy separations agreed well with the experimental ones and the subband energy separation of the buried wire was larger than that of the as-etched wire for the same effective width. These results show that burying wire is effective for creating strong lateral confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357605
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