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  • American Institute of Physics (AIP)  (12)
  • Institute of Electrical and Electronics Engineers  (3)
  • 1
    Digitale Medien
    Digitale Medien
    Manipulation of nucleation by growth rate modulation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3792-3796 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on manipulation of nucleation by means of periodic modulation of the growth rate R, both during molecular beam epitaxial growth of Si on Si(111) and using a simulated bilayer structure. We have found that the bilayer-by-bilayer growth can be improved and that the surface roughness can be reduced by applying the R modulation synchronized with the deposition of a multiple of full bilayers. For nonsynchronized growth the phase of reflection high-energy electron diffraction (RHEED) intensity oscillations could be shifted relative to the bilayer deposition period and a beating phenomenon of the RHEED oscillations was observed, which can be attributed to the superimposed effects of the R modulation and the regular bilayer-by-bilayer growth. We have used the phenomenological correspondence between the surface step density and the RHEED oscillations as a basis to discuss the growth. By employing a kinetic solid-on-solid Monte Carlo model without vacancies and overhangs all significant experimental features could be simulated. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359959
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  • 2
    Digitale Medien
    Digitale Medien
    High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3390-3392 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: InGaN/GaN superlattice structures grown on (0001) sapphire substrates with GaN layers were investigated by two-dimensional reciprocal space mapping of high-resolution x-ray diffraction. The results show that InGaN/GaN multi-quantum wells with fairly good crystallinity can be grown coherently on partially relaxed GaN layer irrespective of the large lattice mismatch and thermal incompatibility with the underlying substrate. Narrow and bright band edge related emissions were observed by photoluminescence measurements, indicating high quality of these InGaN/GaN superlattice structures. Our results suggest a larger band-gap bowing coefficient than the value reported in the literature. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117269
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  • 3
    Digitale Medien
    Digitale Medien
    n-Si/p-Si1−xGex/n-Si double-heterojunction bipolar transistors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2239-2241 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Two different structures of n-Si/p-Si1−xGex/n-Si double-heterojunction bipolar transistors have been fabricated by molecular beam epitaxy. A common emitter current gain β of about 15 was demonstrated in one kind of structure and the β-IC curve has been investigated. In the other structure, a novel multistep collector current IC vs collector-emitter voltage VCE characteristic together with a strong negative resistance behavior was observed at room temperature. In this letter the basic experiments are described; a comparison and a discussion of the two kinds of devices are presented.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99543
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  • 4
    Digitale Medien
    Digitale Medien
    Current transport in strained n-Si1−xGex/p-Si heterojunction diodes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5036-5039 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The measurement and analysis of I-V characteristics from molecular beam epitaxially grown Si0.9Ge0.1/Si p-n diodes are presented. When a diode is forward biased the current transport is mainly injection diffusion of the holes and defect recombination within the depletion region of the n side. At reverse bias, the current comes from tunneling of holes from the top of the p-type valence band to the n-type conduction band, and also to the interface states followed by multistep recombination tunneling via defect states in the depletion region of the n side. The forward voltage drop was found to be much lower than that of Si diodes. Electron irradiation damages have opposite effects on the forward-biased I-V characteristics of Si0.9Ge0.1/Si diodes as compared to the effects observed for Si diodes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340451
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  • 5
    Digitale Medien
    Digitale Medien
    Growth of high quality Ge films on Si(111) using Sb as surfactant (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1409-1411 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High quality, completely relaxed Ge films have been grown on Si(111) using Sb as surfactant at the initial stage of growth. After desorbing the surface Sb layer, cusplike reflection high-energy electron diffraction intensity oscillations indicated excellent Ge layer-by-layer epitaxy. High resolution x-ray diffraction analysis showed a very high crystalline quality and well resolved thickness fringes consistent with a flat relaxed Ge layer. Chemical preferential etching experiments revealed a defect density of down to ∼3×104 cm−2.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112067
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  • 6
    Digitale Medien
    Digitale Medien
    Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1023-1025 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Schottky-type light emitting devices have been fabricated on Er-oxide doped Si layers grown by molecular beam epitaxy, in order to study the light emission process of Er-doped Si structures. By applying a reverse bias on the Schottky junction, Er ions incorporated within the depletion layer can be electrically excited via a hot electron impact process. Rather intense electroluminescence (EL) at a wavelength of 1.54 μm has been observed at room temperature. The optoelectronic properties of the devices have been characterized by both input-power dependent and temperature dependent EL measurements. An activation energy value of ∼160 meV responsible for luminescence thermal quenching has been obtained. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119715
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  • 7
    Digitale Medien
    Digitale Medien
    Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2705-2707 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A high-resolution multiple-crystal reflection diffractometer was used to determine the residual strain in GaN epilayers grown on different substrates. Our results show that the GaN epilayers with thickness of about 1 μm are not fully relaxed. The strain situation in a GaN epilayer grown on SiC substrate is totally different from that in GaN layer on sapphire, which are the main reason for the scatter in the recent data on the optical properties of group III nitrides. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116315
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  • 8
    Digitale Medien
    Digitale Medien
    Erratum: "High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers" [Appl. Phys. Lett. 69, 3390 (1996)] (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2056-2056 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118812
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  • 9
    Digitale Medien
    Digitale Medien
    Si/SiGe/Si:Er:O light-emitting transistors prepared by differential molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1697-1699 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si/SiGe/Si:Er:O heterojunction bipolar transistor (HBT) type light-emitting devices with Er3+ ions incorporated in the collector region have been fabricated using a layered structure grown by differential molecular-beam epitaxy. Electroluminescence measurements on processed light-emitting HBTs can be performed in either constant driving current mode or constant applied bias mode, which is an important advantage over conventional Si:Er light-emitting diodes. Intense room-temperature light emission at the Er3+ characteristic wavelength of 1.54 μm has been observed at low driving current density, e.g., 0.1 A cm−2, and low applied bias, e.g., 3 V, across the collector and emitter. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1356732
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  • 10
    Digitale Medien
    Digitale Medien
    Tunneling current spectroscopy of electron subbands in n-type δ-doped silicon structures grown by molecular beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1962-1968 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Tunneling current measurements on n-type δ-doped Si(100) structures were carried out, with sheet doping concentrations ranging from ∼4×1012 to 2.0×1013 cm−2 at 4 K. All samples have been grown by using a low-energy ion source for antimony doping in a silicon molecular beam epitaxy system. From analysis of dI/dVg and (dI/dVg)/ (I/Vg) spectra, tunneling associated with quantized electron subbands is identified. The subband energy positions relative to the equilibrium Fermi level EF0 under zero bias were determined from the tunneling current measurements as a function of the sheet doping concentration. Self-consistent theoretical calculations of the electronic structure of δ layers have been performed, and good agreement between theory and experiment is obtained for most structures in the tunneling spectra.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345575
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