Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 1560-1561
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Heterojunction solar cells were prepared by magnetron sputtering of n-ZnO onto p-CdSiAs2 single crystals. These crystals were grown by chemical vapor-phase transport and have a resistivity of 2 Ω cm, a Hall mobility of 300 cm2/V s, and a net carrier density of 1016 cm−3 at room temperature. The heterojunctions exhibit short-circuit current densities up to 12 mA/cm2 and open-circuit voltages between 180 and 250 mV with power conversion efficiencies up to 1% under 72 mW/cm2 halogen lamp illumination. Open-circuit voltage values could be increased by heat treatment at 80 °C for 15 min in an argon atmosphere. By measuring the reflection and the quantum yield versus wavelength the efficiency losses in the short-wavelength region could be attributed to the corresponding high reflection.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341835
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