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  • 1
    Electronic Resource
    Electronic Resource
    In situ monitoring of Raman scattering and photoluminescence from silicon surfaces in HF aqueous solutions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 933-935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ Raman spectra of SiHx, Si–F, and Si–Si vibrations from Si surfaces in HF aqueous solutions are obtained using a highly sensitive confocal microprobe Raman system. Electrochemical roughening pretreatment and laser-assisted roughening procedure enable good quality surface Raman spectra to be obtained. The surface Raman and photoluminescence spectra from the Si surface in the etching environment and the correlation of the two types of spectra are discussed. The Raman spectroscopy is shown to have high potential in serving as an important tool for in situ investigating of Si surface bonding during the etching process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120877
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  • 2
    Electronic Resource
    Electronic Resource
    Dynamic domain instability and popcorn noise in thin-film heads : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6391-6393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of dynamic domain instability on popcorn noise probabilities were studied by correlating the measured popcorn noise probabilities with the instantaneous observations of dynamic domain states of thin-film heads during and after writing. Heads with large peak popcorn noise probabilities at intermediate values of write current amplitude were observed to exhibit asymmetric domain patterns and occasional popping wall motion in the yoke structure during writing. The occurrences of dynamic domain instability were imaged by comparing many instantaneous domain patterns at 10 μs after a specific write current excitation. Delayed-relaxation Barkhausen wall jumps near the backgap closure were observed occasionally in several noisy heads. Quantitative correlation between the probabilities of popcorn noise and dynamic domain instability was also obtained in a very noisy head. Dynamic domain instabilities in the yoke are thus responsible for the peak popcorn noise probabilities in thin-film heads.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355360
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  • 3
    Electronic Resource
    Electronic Resource
    Identification of a high-temperature magnetic phase transition in ball-milled and compacted nanocrystalline Fe-Cu alloys : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6028-6030 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fex–Cu100−x alloys (40≤x≤90) prepared by ball milling nominally pure (99%) Fe and Cu powders and warm compacted (at ∼300 °C) were investigated by differential scanning calorimetry, scanning electron microscopy, x-ray diffraction, and magnetic susceptibility measurements. Both fcc and bcc diffraction peaks (indicative of pure Fe and Cu) showed that the mixtures were still two phase even after milling for 400 h, and that they were comprised of 6–10 nm diameter grains. Surprisingly, however, calorimetric measurements indicate the presence of a large endothermic peak for these nanocrystalline composites on heating near 600 °C and an exothermic peak near 400 °C on cooling. Magnetic measurements show that these materials are ferromagnetic at room temperature and remain so (with decreasing saturation magnetization) up to near the Curie point of α-Fe, 770 °C. However, near 600 °C on heating (and also near 400 °C on cooling), the magnetic susceptibility indicates the existence of a magnetic phase change. High-temperature x-ray diffraction data show these effects are due to the oxidation of Fe to form magnetite which subsequently decomposes into wustite. The thermal hysteresis observed in the magnetic and thermal data is due to the sluggishness of the latter transformation. Furthermore, heating to temperatures in excess of 600 °C results in the dissolution of Cu into the iron oxides which does not reprecipitate on cooling. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361895
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  • 4
    Electronic Resource
    Electronic Resource
    Dynamic response of domain walls on the air-bearing surface of thin-film heads : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6394-6396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain configurations on the air-bearing surface (ABS) of inductive thin-film recording heads were studied. It was found that, instead of being a single domain structure, the ABS of a thin-film head usually has multidomains. The direction of the domain walls is neither parallel nor perpendicular to the gap plane. The magnetization was found to be in the plane of the ABS along the track width, with the magnetizations on the two sides of the domain walls either "head-to-head'' or "tail-to-tail.'' The domain walls are slanted in order to spread the magnetic charges along the wall over a larger region, thereby reducing magnetostatic energy in this configuration. The responses of the domain walls are not all in phase, and they are generally out of phase with the rotational process along the gap edge. The magnetization configuration on the ABS and in the throat and the sloped region were investigated in one head and correlated with the domain walls on the ABS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355361
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  • 5
    Electronic Resource
    Electronic Resource
    Domain structures and dynamics near the backgap closure of thin-film heads : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5414-5416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Statically unstable spikelike reversed magnetic domains emanating from the backgap closure of thin-film heads have been observed with high-frequency (1–20 MHz) and high-current amplitude (20–80 mA p-p) drive fields by using a wide-field magneto-optic domain observation system with a 10-nsec exposure time. The spikelike domains are repeatedly nucleated and annihilated within the drive cycle and do not remain after removal of the excitation. The formation of spikelike domains is due to the magnetization rotation back to the nearest easy directions after fanning out near the backgap closure to carry the spreading flux out of (or converging flux into) the backgap closure. The spikelike domains block the flux flow into and out of the backgap closure at excitation frequencies above 10 MHz due to the slow domain annihilation process. It is speculated that occasional failure of these spikelike domains to annihilate after a write pulse could lead to noise when they suddenly collapse during read out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347996
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  • 6
    Electronic Resource
    Electronic Resource
    Plasma implantation technique for incorporation of foreign elements into polymer films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 986-988 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A plasma formed in a gas containing desired foreign elements dissociates molecules, and activates and ionizes foreign elements. These reactive foreign elements are then implanted into a polymer film under an appropriate bias field and substrate temperature. We report that nitrogen and silicon are well incorporated into polyethylene films using this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138650
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  • 7
    Electronic Resource
    Electronic Resource
    Differential dielectric-to-density measurement for cryogenic fluids (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1917-1925 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-speed microprocessor-based cryogenic fluid density instrumentation is developed based on the rigorous application of dielectric theory, using a dielectric susceptibility function in the application of molecular Clausius–Mossotti formula. The operating principle is formulated on a novel differential dielectric measurement approach with a new algorithm which provides for automatic adjustments for polarizability and stray capacitance changes. High-precision digital density measurement is achieved over a wide range of fluid state ranging from supercritical, through subcritical to solid formation phases. Its conceptual development is examined in view of the interplay between theoretical arguments and engineering methodology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139489
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  • 8
    Electronic Resource
    Electronic Resource
    Vacuum arc ion source for heavy ion fusion : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 819-821 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Heavy ion fusion is one approach to the problem of controlled thermonuclear power production, in which a small DT target is bombarded by an intense flux of heavy ions and compressed to fusion temperatures. There is a need in present HIF research and development for a reliable ion source for the production of heavy ion beams with low emittance, low beam noise, ion charge states Q=1+ to 3+, beam current ∼0.5 A, pulse width ∼5–20 μs, and repetition rate ∼10 pulses per second. We have explored the suitability of a vacuum arc ion source for this application. Energetic, high current, gadolinium ion beams were produced with parameters as required or close to those required. The performance parameters can all be improved yet further in an optimized ion source design. Here we describe the ion source configuration used, the experiments conducted, and the results obtained. We conclude that a vacuum arc based metal ion source of this kind could be an excellent candidate for heavy ion fusion research application. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148467
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  • 9
    Electronic Resource
    Electronic Resource
    Mevva ion source for the application of material surface modification : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1295-1297 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Several versions of Mevva ion sources have been developed in our institute since 1988. It operates in a pulsed mode with a pulse length of 1.2 ms and a repetition rate of up to 50 pps. A time-averaged beam current of 10 or 50 mA has been extracted at 30–80 kV from Mevva IIA-H and Mevva IIB, respectively. In order to develop surface modification of materials by ion implantation we have constructed three kinds of Mevva ion source implantation systems. High dose (3–5×1017 cm−2) implantation with Ti, Ce, Y, and Ti+C, etc. has been carried out for improving the lifetime of metal cutting tools, relay contacts, dies, and some sophisticated components.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144985
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  • 10
    Electronic Resource
    Electronic Resource
    InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4186-4188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350616
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