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  • American Institute of Physics (AIP)  (4)
  • Blackwell Publishing Ltd  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Transient Overmodification of Collagen I and III in a Hyperplastic Callus from a Patient with Osteogenesis Imperfecta Type IV (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 580 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb17987.x
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice site location studies of ion implanted 8Li in GaN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3085-3089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice sites of ion implanted Li atoms in GaN were studied as a function of implantation temperature between room temperature and 770 K. We measured the channeling and blocking patterns of α-particles emitted in the radioactive decay of implanted 8Li ions to determine the Li lattice sites. Below 700 K Li atoms occupy mainly interstitial sites in the center of the c-axis hexagons at positions c/4 and 3c/4, where c is the lattice constant in c-axis direction. Around 700 K Li starts to diffuse and presumably interacts with vacancies created in the implantation process. This leads to the formation of substitutional Li above 700 K. An activation energy of about 1.7 eV for interstitial Li diffusion was determined. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368463
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  • 3
    Electronic Resource
    Electronic Resource
    Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2149-2157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of 111In+ and 89Sr+ in the dose range (0.1–3) 1013 cm−2 and ion energies of 60–400 keV has been investigated as a function of annealing temperature with emission channeling (EC) and perturbed γγ angular correlation spectroscopy. The implanted In and Sr atoms occupied substitutional sites in heavily perturbed surroundings of point defects after room temperature implantation. No amorphization of the lattice structure was observed. The point defects could be partly removed after annealing to 1473 K for 10–30 min. Lattice site occupation of implanted light alkalis, 24Na+ in GaN and AlN as well as 8Li+ in AlN, were also determined by EC as a function of implantation and annealing temperature. These atoms occupied mainly interstitial sites at room temperature. Lithium diffusion and the occupation of substitutional sites was observed in GaN and AlN at implantation temperatures above 700 K. A lattice site change was also observed for sodium in AlN, but not in GaN after annealing to 1073 K for 10 min. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372154
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  • 4
    Electronic Resource
    Electronic Resource
    Lattice site location of ion-implanted 8Li in Silicon Carbide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1046-1052 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were measured to determine the Li lattice sites. The alpha emission channeling spectra measured along different crystallographic directions reveal that Li occupies mainly interstitial sites with tetrahedral symmetry, centered along the c-axis atom rows in the hexagonal lattices. In the cubic 3C-SiC structure, Li is located on tetrahedral interstitial sites as well. For 6H-SiC, the implantation temperature was varied between 200 and 823 K without observing significant changes in the emission channeling spectra. Thus, Li diffusion or Li defect interaction resulting in a lattice site change does not occur in this temperature regime. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425442
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  • 5
    Electronic Resource
    Electronic Resource
    Ion beam deposition of fluorinated amorphous carbon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4237-4245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth and the properties of (t)a-C:F films prepared by the deposition of mass separated 12C+ and 19F+ ions as a function of the F concentration. The films are always strongly F deficient due to the formation of volatile F2 and CFx molecules during the deposition process. A maximum F content of about 25 at. % is obtained for an ion charge ratio of C+:F+=1:1. The observed mechanical, optical, electrical, and structural properties as well as the thermal stability of the films are strongly influenced by the F content. A three step progression of the film structure is evident for increasing F concentration: the amorphous three-dimensional network of tetrahedrally bonded carbon atoms of pure carbon films (ta-C) with diamondlike properties is doped for very low F concentrations (ta-C:F). A further increase of the F content results first in transformation to a graphitelike amorphous structure (a-C:F) before the deposited films become porous and to a polymerlike one for the highest F content. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404419
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