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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1541-1543 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiling was done by secondary ion mass spectrometry (SIMS) on SiO2/Si3N4/SiO2 (ONO) structures to determine if the nitrogen tail seen going into the silicon substrate was real or an artifact of ion bombardment. To determine this without an element of doubt, samples were thinned from the back side to the ONO layer and SIMS depth profiling was carried out on the exposed underside of ONO. It is determined that the layer of "nitride'' at the Si/oxide interface is really an artifact of ion bombardment. Profiling from the back side shows there is no nitrogen tail in the silicon substrate and there is also no nitride at the oxide/Si interface. The interfacial nitride layer, and the apparent nitrogen tail extending into the underlying Si, seen from front-side profiling, are due to anomalous nitrogen diffusion during ion bombardment. It is believed that nitrogen-oxygen complexes are formed in the silicon substrate as a result of nitridation, and this adversely affects device performance. Though this may still be true, one needs to be cautious in interpreting SIMS and Auger depth profiles from the front side in order to corroborate the electrical results.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Molecular microbiology 16 (1995), S. 0 
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Single-strand interruptions in a template DNA are likely to cause collapse of replication forks. We propose a model for the repair of collapsed replication forks in Escherichia coli by the RecBCD recombinational pathway. The model gives reasons for the preferential orientation of Chi sites in the E. coli chromosome and accounts for the hyper-rec phenotype of the strains with increased numbers of single-strand interruptions in their DNA. On the basis of the model we offer schemes for various repeat-mediated recombinational events and discuss a mechanism for quasi-conservative DNA replication explaining the recombinational repair-associated mutagenesis.
    Type of Medium: Electronic Resource
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