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  • American Association for the Advancement of Science (AAAS)  (17)
  • American Institute of Physics (AIP)  (10)
  • 1
    Electronic Resource
    Electronic Resource
    Nitrogenated tetrahedral amorphous carbon films prepared by ion-beam-assisted filtered cathodic vacuum arc technique for solar cells application (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2473-2475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fabrication and characterization of nitrogenated tetrahedral amorphous carbon (ta-C:N) semiconductor/crystalline p-type silicon (p-Si) heterojunction structures are reported. The electron-hole pairs generated from both ta-C:N and Si depletion regions were observed from photoresponse measurements. The peaks are centered at about 540 and 1020 nm, which correspond to the optical absorption edge of ta-C:N and p-Si, respectively. The reverse current increased by three orders of magnitude when the structures were exposed to AM1 light. A photovoltaic effect was observed from ta-C:N and the values of short circuit current, open circuit voltage, and field factor obtained are 5.05 mA cm−2, 270 mV, and 0.2631, respectively. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122486
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  • 2
    Electronic Resource
    Electronic Resource
    Nonlinear waves in a low-β plasma with cylindrical symmetry (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 4780-4783 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The "Sagdeev potential" is derived from the magnetohydrodynamic equations in a cylindrical coordinate system, and nonlinear electrostatic density waves propagating along the magnetic field in a low-β plasma with cylindrical symmetry are studied. The results show the existence not only of periodic density waves, solitons with a density hump and solitons with a density dip, but also of density shock waves. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409959
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  • 3
    Electronic Resource
    Electronic Resource
    The interaction between platinum films and silicon substrates: Effects of substrate bias during sputtering deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1679-1683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions between platinum and silicon, both during platinum deposition at elevated temperature and during a thermal annealing process, have been investigated using x-ray diffraction, cross-sectional transmission electron microscopy, and x-ray photoelectron spectroscopy. It has been found that sputtering deposition of platinum on a silicon substrate at 200 °C results in the formation of PtSi at the Pt–Si interface. But the reaction cannot fully proceed at this temperature for a platinum film with a thickness of 35 nm. Further annealing at 450 °C causes the platinum film to transform to PtSi completely. A substrate bias of −90 V during sputtering deposition leads to the formation of platinum films with larger columnar grains, instead of finer grains as being formed without substrate bias. In such a case, oxygen diffusion toward the interface was enhanced through the boundaries of these columnar grains, and this results in an accumulation of oxygen and oxide formation at the interface. As a result, the reaction between platinum and silicon was inhibited during the further annealing process for the Pt/Si films deposited with substrate bias. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373871
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  • 4
    Electronic Resource
    Electronic Resource
    High density submicron magnetoresistive random access memory (invited) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5822-5827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal–oxide–semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369931
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  • 5
    Electronic Resource
    Electronic Resource
    Properties and structures of diamond-like carbon film deposited using He, Ne, Ar/methane mixture by plasma enhanced chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8122-8131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond-like carbon (DLC) films have been deposited by a magnetically enhanced plasma (MEP) chemical vapor deposition (CVD) system. The properties and structures of DLC films deposited by MEP-CVD using various gases (methane, He/methane, Ne/methane, and Ar/methane) were studied. The mechanical properties in terms of hardness, Young's modulus and stress, and optical properties in terms of optical band gap and refractive index were enhanced by adding inert gas in methane plasma. The magnitude of the effects on the properties for various inert gases was found as Ne, Ar, and He, on the surface roughness was found as Ar, Ne, and He. The Raman characteristic shows a dependence of the bias voltage and inert-gas/methane ratio, as well as the inert gases dilution. The Raman spectroscopy analysis indicates that the changes of properties of the DLC films are due to the structural changes, such as sp2 and sp3 content in the films prepared under various deposition conditions. The films deposited in Ne/methane show the lowest disordered (D) peak to graphitic (G) peak intensity ratio, the D and G peak positions; highest stress, hardness, Young's modulus, optical band gap, and lowest reflective index. The films deposited in Ar/methane show the lowest surface roughness. This was proposed due to the optimum balance in the inert gas ionization potential and atomic mass. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373507
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2293-2295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in a series (0001)-oriented GaN epitaxial film. Photoluminescence (PL) and carrier mobility of the films are measured at room temperature. The intensities of both the band edge (3.42 eV) peak and yellow luminescence (YL) are strongly related to the threading dislocation density of the GaN films. But different types of dislocations show different relationship with the intensities of PL and YL. The fundamental correlation is found not only between the interaction of edge- and screw-type dislocations and the carrier mobility but also between the interaction and the intensities of both the band edge peak and the YL. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465531
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  • 7
    Electronic Resource
    Electronic Resource
    Imaging and magnetometry of switching in nanometer-scale iron particles (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3269-3271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reversal mechanisms in arrays of nanometer-scale (〈40 nm diameter) iron particles are studied by low-temperature Hall magnetometry and room-temperature magnetic force microscopy. Rotation of the net array magnetization at low temperatures (20 K) occurs by both reversible and irreversible modes, the latter revealed by Barkhausen jumps. Spatially resolved measurements at room temperature show the particles to be single domain with remanence and coercivity indicating they are not superparamagnetic. Individual particles are observed to switch irreversibly over a small field range (〈10 Oe) between preferred magnetic directions parallel to the growth direction of the particles. Scaling of the arrays offers the possibility of magnetic storage at the 45 Gbit/in.2 level, nearly 50 times greater than current technology. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118032
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  • 8
    Electronic Resource
    Electronic Resource
    Field-dependence of microscopic probes in magnetic force microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 705-707 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a technique for characterizing the magnetic state of a magnetic force microscopy (MFM) probe as a function of uniform external magnetic field H. A local magnetic field is generated by micron-scale current carrying conductors and directly imaged by MFM. As H alters the magnetic state of the probe, changes in image contrast yield componentwise measures of the tip's net magnetic moment m, tip hysteresis loops and coercivities, and possible orientations (vertical vs lateral) of remanent states mr used for most MFM imaging. Results are presented for a variety of thin-film probes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117813
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of substrate temperature on the orientation of YBa2Cu3O7 films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characteristics of YBa2Cu3O7 (YBCO) thin films were investigated by x-ray diffractometry. Films with good preferred orientation (001) and high Tc0 (86–90 K) can be prepared in situ using the dc magnetron sputtering method. For the films prepared on the ZrO2 (stabilized with Y2O3) substrate at a substrate temperature (Ts) less than 700 °C, there are different orientations and the degree of random orientation will decrease with increasing Ts. YBCO films with (001) can be obtained on ZrO2 with different crystal planes, such as (100), (110), and (111) at suitable temperature (760–850 °C). From the results it could be concluded that the YBCO film growth with c-axis orientation mainly depends on the substrate temperature Ts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104261
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  • 10
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    Far-forward collective scattering measurements by FIR polarimeter-interferometer on J-TEXT tokamak (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-08-04
    Description: The multi-channel three-wave polarimeter-interferometer system on J-TEXT tokamak has been exploited to measure far-forward collective scattering from electron density fluctuations. The diagnostic utilizes far infrared lasers operated at 432 μ m with 17-channel vertical chords (3 cm chord spacing), covering the entire cross section of plasma. Scattering laser power is measured using a high-sensitivity Schottky planar diode mixer which can also detect polarimetric and interferometric phase simultaneously. The system provides a line-integrated measurement of density fluctuations with maximum measurable wave number: k ⊥ max ≤ 2 cm −1 and time response up to 350 kHz. Feasibility of the diagnostic has been tested, showing higher sensitivity to detect fluctuation than interferometric measurement. Capability of providing spatial-resolved information of fluctuation has also been demonstrated in preliminary experimental applications.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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