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  • American Institute of Physics (AIP)  (10)
  • American Association for the Advancement of Science (AAAS)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 6239-6248 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The gas phase vibrational overtone spectrum of propane is measured using conventional near infrared (NIR) spectroscopy for the ΔvCH=2–5 regions and intracavity dye laser photoacoustic spectroscopy (IDL-PAS) for the ΔvCH=5 and 6 regions. The peaks are assigned in terms of the local mode model. Experimental oscillator strengths are compared to values calculated for the CH-stretching components of the spectrum. The calculations use a harmonically coupled, anharmonic oscillator local mode model to obtain the vibrational wave functions, and ab initio MO calculations at the SCF level with a 6-31G* basis set to obtain the dipole moment function. The importance of intermanifold coupling is explored. The calculations can account for the fall-off in intensity with increasing v, and can give a reasonably quantitative account of the relative intensities of the individual peaks within a given vibrational manifold. The questions of the relative intensities of primary and secondary CH bonds, and of the relative intensities of different methyl CH bonds are also explored.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 3903-3911 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The liquid phase overtone spectrum of CD2Cl2 is measured in the CD-stretching regions corresponding to ΔvCD=2 to 4, and the peaks are assigned in terms of the local mode model. Oscillator strengths are determined from these spectra and from the previously measured overtone spectra of CH2Cl2. A general theoretical description is developed for the overtone intensities in these molecules. The theory considers the functional dependence of the dipole moment on local coordinates, as determined from CNDO calculations and numerical differentiation techniques. Morse oscillator wave functions are used to describe the vibrational state within a symmetrized local mode description, and matrix elements of these wave functions are evaluated over powers of the local CH/CD coordinate. It is evident that any description of overtone intensities in terms of harmonic oscillator wave functions would be totally inadequate. Vibrational mixing of the symmetrized Morse oscillator product states is detemined from a harmonic coupling model. The theory predicts that vibrational mixing is much more important as a source of intensity for combinations than off-diagonal terms in the local coordinate expansion of the electric dipole moment. Significant contributions to overtone intensity arise from terms involving the first, second, and third derivatives of the dipole moment. The linear and quadratic terms always appear with opposite sign. Comparison of the calculated and experimental oscillator strengths reveals that, although the calculated oscillator strengths are too small, they account reasonably well for the observed exponential fall off in overtone intensity with increasing v, and the greater intrinsic overtone intensity of CH2Cl2 as compared to CD2Cl2. The calculations also account for several detailed features of the individual spectra.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 3463-3468 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Oscillator strengths for the CH-stretching components of the overtone spectrum of dichloromethane are calculated for ΔvCH ≤4. The calculations use local mode theory to obtain the vibrational wave functions and SCF theory, with a number of different basis sets, to obtain the dipole moment functions. A comparison with experimental results shows the calculations can reproduce the relative ordering of the oscillator strengths as a function of the particular vibrational state, and give a reasonably quantitative account of the magnitude of the intensities, even with simple split-valence basis sets.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5844-5854 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Gas phase overtone spectra of dimethyl ether (ΔvCH=2–5) and acetone (ΔvCH=3) are measured using conventional near infrared (NIR) spectroscopy. Intracavity dye laser photoacoustic spectroscopy (IDL-PAS) has been used to measure the ΔvCH=5–7 gas phase spectra of both dimethyl ether and acetone. Oscillator strengths are calculated using a harmonically coupled anharmonic oscillator local mode description to obtain the vibrational wave functions and ab initio molecular orbital (MO) calculations to obtain the dipole moment function. The calculations, which use no adjustable parameters, can account for the magnitude of the intensities and for the falloff in intensity with increasing v, for both molecules. It can also account reasonably well for the relative intensity of various peaks within a given vibrational manifold and for the relative intensity in the spectra of these two molecules and of propane.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1664-1666 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon bipolar junction transistors employing metal-thin insulator-semiconductor tunnel junction emitters are capable of realizing extremely high common-emitter current gains. The experimental evidence presented here indicates a possible limitation of these devices as regards their inability to withstand moderate temperature stressing.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3371-3374 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The three-dimensional heat diffusion equation has been solved numerically for scanning cw laser-annealed multilayer structures. The computational method can be applied to laser beams with either circular or elliptical symmetry. The temperature dependence of relevant optical and thermal properties has been included and good agreement with experimental results is obtained. The dynamics of melting are examined and discussed. It is found that the presence of a thin buried oxide in a silicon wafer substantially increases the sensitivity of the maximum melt depth to laser power.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 8079-8083 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterostructure Si/Ge/Si p-metal–oxide–semiconductor field effect transistors (MOSFETs) with 1-nm-thick pure Ge channels grown pseudomorphically on Si substrates have been fabricated and characterized. Simultaneous solution of Schrodinger and Poisson's equations reveals that the 1-nm-thick Ge region can effectively confine holes in a subsurface channel. This result is confirmed through the fabrication of test MOS capacitors and MOSFETs using a process with plasma enhanced chemical vapor deposition gate oxide and a peak thermal budget of just 5 s at 600 °C. (Raman spectroscopy shows that this thermal treatment does not significantly relax the strain in the Ge layer). However, transconductance measurements on the MOSFETs indicate that the mobility of holes in the buried channel is substantially less than at the Si surface. It is speculated that this poor mobility may result from hole scattering at the abrupt Si/Ge interface. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3270-3272 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Si/SiGe/Si heterojunction bipolar transistor structures, very shallow arsenic implant on the emitter has been found to cause anomalous boron diffusion in the base. This phenomenon imposes stringent constraints on the device fabrication processes. We discovered that by using platinum silicide, which also served as a self-aligned low resistance contact material to the emitter and base, the anomalous diffusion in the base was significantly reduced. In this letter, we report the experiment results, and propose possible explanations.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 977-979 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual ion damage due to low-energy ion implantation during molecular beam epitaxy growth was investigated by measuring the minority carrier lifetime in the base of a silicon bipolar transistor. The base was doped with As+ ions at 200 eV to a concentration of 1019 cm−3. Three samples were grown at temperatures of 500, 650, and 800 °C. The 500 °C sample had a minority carrier lifetime in the base ∼1/6 that of the samples grown at the higher temperatures. On annealing at 650 °C the lifetimes of all samples were essentially equal. The results indicate that at this dopant concentration the collision cascades caused by ion bombardment do not overlap. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 1355-1364 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The gas phase overtone spectra of neopentane-d6 [(CH3)2C(CD3)2] and neopentane-d9 [(CH3)C(CD3)3] are measured in the regions of ΔvCH =2–5. The peak positions are analyzed in terms of the local mode model with the assumption of methyl group independence. The overtone linewidths are shown to be consistent with intramolecular vibrational decay of the overtone states. The coupling scheme for the vibrational decay is similar to that applied to the linewidth data of benzene by Sibert, Reinhardt, and Hynes.
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