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  • American Institute of Physics (AIP)  (127)
  • 1990-1994  (127)
  • 1980-1984
  • 1
    Electronic Resource
    Electronic Resource
    Properties and measurement of scanning tunneling microscope fabricated ferromagnetic particle arrays (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6656-6660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low temperature magnetic properties of arrays of scanning tunneling microscope (STM) fabricated ferromagnetic particles have been studied as a function of their dimension using a novel high sensitivity Hall magnetometer. Iron deposits with controlled shape and nanometer scale diameters (∼25 nm) are formed using a STM to decompose a metalorganic precursor [Fe(CO)5] in the active area of the measurement device. The hysteresis loops change significantly in going from nearly isotropic to oriented high aspect ratio (6:1 length to diameter) filamentary particles. In particles of intermediate aspect ratio and diameter the largest coercive field of 2.7 kOe is observed. This behavior as well as the characteristics of the Hall magnetometer (spin sensitivity of 10−14 emu/ Hz1/2) are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358160
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  • 2
    Electronic Resource
    Electronic Resource
    Ferromagnetic resonance and Brillouin light scattering from epitaxial FexSi1−x films on Si(111) (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6897-6897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of epitaxial FexSi1−x films on Si(111) have been determined by means of ferromagnetic resonance (FMR) and Brillouin light scattering (BLS). The investigated films are (111) oriented, with thicknesses h=150 A(ring), 250 A(ring), 710 A(ring), and Fe concentrations x=0.75, 0.79, and 0.75, respectively. All experiments have been carried out at room temperature. For BLS, the frequencies of both surface and bulk magnons have been measured as a function of the external in plane field H and the in plane direction of magnon propagation versus the main crystallographic axis. Moreover, the wave vector dependence has been used to identify the surface and bulk magnons present in the thicker films. FMR has been used in the parallel configuration (PC) and normal configuration (NC), where the external applied field lies in the sample plane and normal to the sample, respectively. Several waveguide setups were used to cover the frequency range from 18 to 92 GHz. For the numerical analysis we used the resonance conditions for a thin single crystalline film grown in the (111) plane. From our fits we obtained for the Landé g value 2.1, for the saturation induction 4πMs=8.8 kG, 10.7 kG, 13.7 kG for h=150 A(ring), 710 A(ring), and 250 A(ring), respectively. The magnetic parameters have been found to depend strongly on the Fe concentrations and FexSi1−x-Si substrate interface interdiffusion. The magnetic parameters of epitaxial FexSi1−x films are in agreement with the data obtained from single crystals by Hines et al. The Landau–Lifshitz FMR relaxation constant is very small, ranging from 5 to 8×107 rad/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358107
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  • 3
    Electronic Resource
    Electronic Resource
    A combined plasma-surface model for the deposition of C:H films from a methane plasma (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7718-7727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of C:H layers by an electron-cyclotron-resonance plasma from methane was investigated. C:H was deposited at a methane pressure of 1.6 Pa and a substrate temperature between room temperature and 700 K. The film composition, morphology, and structure were investigated by high-energy ion beam analysis and scanning electron microscopy. A combined plasma-surface model for thin-film deposition is proposed, which includes the electron-induced dissociation of methane in the plasma and a growth model. The dominant reactions for film growth are the adsorption of the radical CH3, the direct incorporation of the ions, and the etching reactions with atomic hydrogen from the plasma. A consistent description for the deposition of hydrocarbon layers emerges. It compares favorably with measurements on the temperature dependence of the film growth and the influence of variable gas flow through the reactor on the growth rate and the film morphology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356603
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic and crystallographic order in α-manganese : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7049-7051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have made time-of-flight neutron diffraction measurements on α-manganese metal. Powder diffraction measurements were made at 14 temperatures between 15 and 305 K, and single crystal measurements were made at 15 and 300 K. We found that the crystal structure of α-Mn is tetragonal below its Néel point of 100 K, with crystal symmetry I4¯2m and magnetic (Shubnikov) symmetry PI4¯21c. In agreement with the earlier results of Yamada et al., there are six independent magnetic atoms, and we found that their moments are weakly temperature dependent. The onset of magnetic order causes slight changes in the atomic positions and in the average atomic elastic constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358024
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  • 5
    Electronic Resource
    Electronic Resource
    Optical, electrical, and photoelectrical properties of sputtered thin amorphous Zn3P2 films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7448-7455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous zinc-phosphide films have been prepared by reactive rf sputtering of zinc in a PH3-containing argon atmosphere. Transmittance and reflectance measurements were used to calculate the refractive index n and the extinction coefficient k as functions of wavelength. The absorption coefficient α was calculated and an optical gap of 1.60 eV was deduced. The benchmark energy E04, where the absorption reaches 104 cm−1, is at 1.75 eV. The measurement of the dark conductivity yielded an activation energy around 0.7 eV, near optical midgap. The magnitude of the pre-exponential factor of the conductivity and the sign of the thermopower indicate that carrier transport is due to conduction in extended valence-band states. The photoconductivity is much higher than the dark conductivity at room temperature. A gain of 103 was obtained by illumination with 100 mW cm−2 white tungsten lamp radiation. From the temperature dependence of the photoconductivity, activation energies of 0.18 and 0.3 eV can be deduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356613
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  • 6
    Electronic Resource
    Electronic Resource
    Optical and thermal properties of electron- and hole-trapping sites in the x-ray storage phosphor RbI:X (X=Tl+, In+, Pb2+, Eu2+) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1800-1808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional x-ray detectors based on x-ray storage phosphors are utilized in the field of medicine, biology, and physics. Defect centers and mechanisms contributing to the photostimulated luminescence (PSL) process of the x-ray storage phosphor RbI:X (X=Tl+, In+, Pb2+, Eu2+) are reported. By optical and thermoluminescence spectroscopy the electron and hole storage centers involved in the PSL process were identified. F- and Z type and Tl0 centers turned out to be the occupied electron storage centers, VK− and dopant-related VKA centers the hole-trapping sites. The specific choice of the dopant yields storage phosphors with different physical properties, such as emission characteristics, photostimulation characteristics, and thermal stability of the information storage. At T=300 K the information stored in the RbI:Tl+ phosphor is unstable, in RbI:Eu2+ it is nearly stable and in RbI:In+ stable. A physical model for the PSL as well as for the thermoluminescence is derived. In the Tl+-doped material Tl0 centers were found to act as efficient electron storage centers at temperatures below 180 K with a 4.7 times larger storage capability than F centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357698
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  • 7
    Electronic Resource
    Electronic Resource
    A study of epitaxially stabilized FeSi2 by surface enhanced Raman scattering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1968-1970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially stabilized films with the defect CsCl structure, that were grown by molecular beam epitaxy, have been studied by surface enhanced Raman scattering using a silver overlayer. We have observed that the defect-induced phonon density of states features in the Raman signal shift from 256 cm−1 for a coherently strained film to 263 cm−1 for a relaxed one. The lower energy observed for the former can qualitatively be explained by the expansive trigonal distortion arising from the misfit of −0.5%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357658
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  • 8
    Electronic Resource
    Electronic Resource
    Method for the determination of photostimulable defect center concentrations, production rates, and effective formation energies (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4658-4661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method is proposed to determine radiation-induced defect center concentrations in solids which exhibit photostimulable luminescence. The technique relies on the determination of the number of photons released by spontaneous and photostimulated luminescence. A comparison with the x-ray-absorbed energy yields the effective formation energy of spontaneous luminescence photons and photostimulable centers. The method is applied representatively to BaFBr:Eu2+, which is utilized commercially as photostimulable x-ray storage phosphor in image plates for x-ray, γ-ray, electron, and neutron radiography. It is shown that in the utilized material on average 8 photostimulable F(Br−) centers (color centers based on bromine vacancies) and about 5 spontaneously emitted photons are generated by the absorption of 1 keV x-ray energy. Taking recent investigations into account which show that the x-ray generation of spontaneous luminescence and photostimulated luminescence centers is accompanied by the creation of approximately 36 nonphotostimulable defect centers, an average formation energy of about 20 eV per defect center can be calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355917
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  • 9
    Electronic Resource
    Electronic Resource
    Surface modification during scanning tunneling microscope measurements on YBa2Cu3O7 thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7774-7777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During scanning tunneling microscopy measurements on YBa2Cu3O7 thin films with positive sample bias voltages, different kinds of surface modifications appear. While in the topography condition no surface modification occurs, the cleaning and etching conditions irreversibly change the surface topography. In the deformation condition a strong elastic deformation of the tip and/or the surface is observed. It is shown that field evaporation of material from the surface to the tip is responsible for the observed surface modification. In consequence, the tip is contaminated with different oxides. Localized states in the oxides make resonant tunneling of electrons through the oxide layer possible. The configuration of these localized states determines the kind of surface modification by the scanning tunneling microscope. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357955
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  • 10
    Electronic Resource
    Electronic Resource
    Ion channeling studies of epitaxial Fe and Co silicides on Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7256-7264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial Co and Fe silicides have been grown by molecular beam epitaxy on Si(111) and Si(001) substrates with film thicknesses ranging between 25 and 8400 A(ring). We used Rutherford backscattering spectrometry channeling techniques to measure the lattice distortion as a function of film thickness. The critical thickness hc corresponding to the film thickness at which strain relieving dislocations begin to appear was determined for CoSi2 on Si(111) and Si(001) as well as for Si on CoSi2(111). For CoSi2 on Si(001), a larger critical thickness was obtained than on Si(111), where hc is ∼45 A(ring). Epitaxial Si on CoSi2(111) was found to be under a compressive strain up to thicknesses of about 350 A(ring) depending on substrate misorientation. Strain measurements were also performed on epitaxially stabilized Co and Fe monosilicides with the CsCl structure. Channeling measurements on thick epitaxial films of bcc-Fe, Fe3Si, FeSi, and Fe0.5Si were used to determine the crystalline quality. Excellent channeling minimum yields of 4.0% were found for bcc-Fe/Si(111). The results are compared with structural information obtained from x-ray diffraction and Brillouin scattering spectroscopy. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358007
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