Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2206-2207
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220–140 °C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(−/0) level, an acceptor like the A center.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.98941
Permalink
|
Standort |
Signatur |
Erwartet |
Verfügbarkeit |