ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Rapid-frequency-scan laser for instantaneous line-profile measurements in fluorescence spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 759-764 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Rapid-frequency-scan (RAFS) dye lasers have been developed for determination of instantaneous line profiles of neutral atoms and molecules. Two types of rapid-frequency scanners are examined and their scanning performances are compared. One scanner is an étalon driven by a PZT piezoelectrical element, and the other is an electro-optical (EO) filter with a KDP crystal. The PZT scanner takes 4–5 μs to scan over the free spectral range (FSR), and the EO scanner can make faster scanning. The maximum scanning range is limited by FSR, and the static bandwidth is approximately 1/100 of FSR in both cases. In fast scanning, however, the dynamic bandwidth increases. The error in the single shot measurement is evaluated, based on an experimental result of the line-profile measurement of Fe atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139627
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature GaAs epitaxial growth using electron-cyclotron resonance/metalorganic-molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2778-2780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-temperature GaAs epitaxial growth method called electron-cyclotron resonance molecular-beam epitaxy was newly developed. Triethylgallium (TEGa) and triethylarsine (TEAs) were used as source gases and were introduced without thermal decomposition. The method has the advantage of cleaning the GaAs substrate at the growth temperature just prior to growth as well as to decompose metalorganics with the hydrogen plasma activated by the cyclotron resonance. The epitaxial GaAs film was successfully grown at a temperature as low as 300 °C. All samples grown at 400 °C exhibited p-type conductivity for (arsine/gallium) ratios between 4 and 13. The p-type carrier concentration was strongly dependent on the (arsine/gallium) ratio and was in the range of 1016 –1019 cm−3 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341600
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Sensitivity-enhanced electron holography and its application to magnetic recording investigations (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2000-2004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sensitivity for electron-phase measurement in electron holography has been improved to better than 2π/100 by the application of digital interferometry at the optical reconstruction stage. This enables quantitative measurement of magnetic flux as small as (1/100)(h/e)(=4.1×10−17 Wb), hitherto undetectable, with high spatial resolution. With this technique, we have observed the distribution of leakage magnetic field from a thin cross section of a perpendicularly magnetized recording film (cobalt-chromium) with a recording density as high as 300 kFCI (85 nm bit length), the highest density ever directly observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342891
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    ac-dc conversion effect in Y-Ba-Cu-O ceramics (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2787-2793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Y-Ba-Cu-O ceramics, the dc voltage (Vdc ) induced by an rf current of 2–20 MHz, which had been previously reported as "reverse ac Josephson effect,'' was observed at 77–300 K. The observed Vdc is not found to be due to reverse ac Josephson effect but due to nonlinear current-voltage characteristics, as in the case of BaPb1−xBixO3. However, behavior of the Vdc is different from that in BaPb1−xBixO3, which was related to bulk superconducting transition. The Vdc is observed only in the sample with particular electrical contacts and only when the rf current can flow through the potential electrical contacts. The origin of the rf-to-dc conversion effect in Y-Ba-Cu-O is ascribed to local nonlinear resistance near potential contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342769
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Transient local magnetic field measurement in a bumpy torus by rapid-frequency-scan laser spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1593-1596 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new technique for local magnetic field measurement in a bumpy torus NBT-1M (which is a magnetic plasma confinement device) has been developed using a rapid-frequency-scan (RAFS) laser system combined with sodium atomic beam probing. The RAFS laser beam excites the sodium D1 transition in the plasma cavity, and the Zeeman pattern is determined with laser fluorescence spectroscopy in a single laser shot. From the Zeeman splitting, the transient magnetic field distribution in the plasma, produced by electron cyclotron resonance heating (ECH), is measured with an accuracy of ±3.2%, a spatial resolution of 5 mm, and a temporal resolution of 5 μs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139406
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Wall vortex induced by and moving with a confined vortex pair (1989)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 1 (1989), S. 1280-1282 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A wall vortex was found, which was induced by, and moved together with, a confined vortex pair, near the parallel plates between which the confined vortex pair was traveling. The generation of the wall vortex can be attributed to the boundary layer separation that was caused by the characteristic flow field of the vortex pair itself.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.857352
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Continuous sinusoidal wave modulation of the three-grid Bayard–Alpert gauge (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1953-1956 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A continuous sinusoidal wave (10 Hz) potential was supplied to the intermediate grid (G2) of a special three-grid Bayard–Alpert (BA) gauge. The ion collector current corresponding to the instant maximum potential of G2 was regarded as Ion and that corresponding to the instant minimum potential was regarded as Ioff. It was confirmed that this peak-to-peak value, Ion−Ioff, was equal to the difference between the two dc currents, ΔI, which was obtained by manual switching modulation. In order to reduce the effect of noise, a low-pass filter was used. Although the waveform of the signal current was deformed by the filter, the error by this deformation was negligible. Corresponding to the modulation, a considerably strong induced current flowed in the collector circuit, and to avoid the effect of this current, two methods were used in conjunction. One was phase-sensitive detection and the other was compensation. The theoretical concept and electronic circuits are shown with some experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138451
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    ac-dc conversion effect in ceramic superconductor BaPb1−x BixO3 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5061-5066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dc voltages (Vdc ) induced by an rf current of frequency 10 MHz in the ceramic superconductor BaPb1−x Bix O3 have been observed near the superconducting transition temperature(∼10 K). The Vdc is related to superconductivity because the Vdc decreases with increasing applied magnetic field. From the investigations using second-harmonic superposition on the rf current as well as differential resistance measurements, it is concluded that the Vdc is generated by an alternating current and its second-harmonic wave flowing through the sample with a nonlinear but symmetric current-voltage characteristic induced by the superconducting transition. Therefore, the observed Vdc induced by an rf current is not due to the reverse ac Josephson effect, which had been proposed previously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342461
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Reflection electron microscopy observation of the Si-SiO2 interface (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2637-2640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Si-SiO2 interface was studied by reflection electron microscopy (REM) in two situations: (1) through a partially etched oxide film, and (2) after removal of the oxide. We also used high-resolution cross-sectional transmission electron microscopy (HR-XTEM). A roughness of 5.0–15.0 nm in height and 0.7–2.0 μm in width could be resolved through the 2.0-nm oxide film, and the same roughness could be resolved after the oxide was removed. It was made clear that step intervals less than 50.0 nm cannot be resolved by REM, because of the lowering of the resolution due to the foreshortening. It is believed that the fringelike pattern observed after the oxide was removed reflects small steps, but they are not an accurate reflection of the steps at the interface, as observed by HR-XTEM. REM after removal of the oxide has been confirmed as being an effective means of observing the Si-SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341002
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the SiO2-Si interface (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1960-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behaviors of Fe impurities at the SiO2-Si interface of metal-oxide-semiconductor (MOS) capacitors was studied with electrical measurements and transmission electron microscopy. The MOS capacitors were fabricated on silicon wafers which had been intentionally contaminated by Fe+ ion implantation. It is confirmed that Fe impurities either scattered uniformly, or nucleated at the interface of SiO2-Si. Uniformly scattered Fe impurities lower the barrier height of the SiO2-Si interface. The nucleated Fe precipitates are in a metallic α-FeSi2 phase, penetrating both the silicon oxide and the silicon substrate. They degrade the MOS capacitors not only by reducing the barrier height of the SiO2-Si interface, but also by inducing weak spots in the silicon oxide where the electric field is strengthened and local tunneling currents are enhanced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339534
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...