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  • American Institute of Physics (AIP)  (78)
  • 2005-2009
  • 1990-1994  (47)
  • 1985-1989  (31)
  • 1930-1934
  • 1
    Electronic Resource
    Electronic Resource
    Raman studies of plasmon modes in a drifting two-dimensional electron gas (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1701-1705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first Raman-scattering studies of the behavior of the intrasubband plasmon mode of a two-dimensional electron gas which is undergoing lateral drift in an applied electric field. The data clearly show the expected Doppler shifts of the modes traveling up- and downstream, together with the expected dependence on the wave vector, but at higher drift velocities, the expected linear shift is distorted because of electron heating effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357684
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetoresistance and magnetization in submicron ferromagnetic gratings (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5249-5256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for engineering micron and submicron scale structures from magnetic films of transition metals has been developed using a combination of electron- and ion-beam lithography enabling high-quality arrays of submicron magnetic Fe wires to be fabricated. This process can be used to fabricate novel devices from a variety of metal combinations which would not be possible by the usual liftoff metallization method. The structure and magnetic properties are reported of an epitaxial 25 nm Fe(001)/GaAs(001) film and the wire gratings which are fabricated from it. The width of the wires in the grating is 0.5 μm for all structures studied, but the separation of each wire is varied in the range 0.5 to 16 μm. An artificially induced shape anisotropy field of around 1 kG, consistent with a magnetostatic calculation, was observed for all separations studied. The field dependence of the magneto-optic Kerr effect and magnetoresistance (MR) data is consistent with a twisted magnetization configuration across the width of the sample beneath saturation for transverse applied fields. In this case, the detailed form of the field dependence of the MR is strikingly modified from that observed in the continuous film and is consistent with coherent rotation of the magnetization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355723
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  • 3
    Electronic Resource
    Electronic Resource
    Oscillations in the frequencies and coupling strengths of two-dimensional plasmons induced by grating couplers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5909-5915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct optical coupling to the plasmon modes of a two-dimensional electron gas in a stratified semiconductor system requires an overlaid grating coupler. Plasmons can be excited with wave vectors equal to integer multiples of the grating wave vector, and the periodic screening by the grating splits these into two modes, symmetric and antisymmetric with respect to the grating profile. We present calculations of the dispersions and optical coupling strengths for several orders of both modes in a typical structure, and show that the splitting and coupling strengths of the higher order modes oscillate with varying grating mark fraction. These effects are discussed in terms of the oscillating field strengths and charge density profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358413
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  • 4
    Electronic Resource
    Electronic Resource
    Synchrotron radiation Bragg angle contour mapping of crack nucleation at grain boundaries (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2282-2288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In technical materials a critical step leading to complete macroscopic failure is not the nucleation of cracks in isolated grains, but instead the transmission of rupture from grain to grain until the entire cross section is traversed. It is difficult, in general, to employ the usual microscopic observations which could provide the keys to a comprehensive mechanistic understanding of this problem. It is shown herein that monochromatic synchrotron radiation can be used to provide Bragg angular contour maps in a rapid and precise manner. These maps enable one to quantify the local strain field tensor associated with crack nucleation and propagation through a grain boundary. Based on this analysis it is then a straightforward process to determine the other mathematical properties usually associated with second rank tensors which lead to assessment of critical parameters for crack transmission at the boundary. The application of this analytical technique is experimentally demonstrated by studies of crack formation at grain boundaries in zinc bicrystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343416
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  • 5
    Electronic Resource
    Electronic Resource
    Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1972-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new design for radiation-sensing field-effect transistors (RADFETs) is presented, involving the use of very thick silicon nitride layers deposited on top of a high-quality thermal silicon dioxide. In contrast to previous RADFET fabrication procedures, no attempt was made to introduce hole traps into the thermal oxide. Instead the trapping layer at the nitride oxide interface was used to store the positive charge which forms the basis for operation of the RADFET. Data is presented which shows hole transport in the thermal oxide. Models explaining the field dependence of the response and the saturation behavior of the dual dielectric device are given. These RADFETs are more stable than any previously described in the literature and have a sensitivity of 86 μV/rad dose at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342887
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  • 6
    Electronic Resource
    Electronic Resource
    Low-energy proton detection by Pd metal-insulator-semiconductor diodes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6839-6844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been discovered that palladium-gated metal-insulator-silicon Schottky barrier diodes are very sensitive to fluxes of energetic protons in high vacuum. Data on the dosimetric response of the diodes to energetic protons are presented, along with data on the subsequent decay in the induced signal. A model for the response is developed, based on the response of similar structures to partial pressures of molecular hydrogen. The model involves adsorption sites at both the external Pd surface and the interface between Pd and SiO2, as well as known H absorption properties of bulk Pd. The sensitivity at 300 K of our diodes is about 109 protons (1011 cm−2). The inventory of protons stored in the bulk Pd, the surface, and at the interface indicates that the areal site density for the surface and interface is about 1015 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341973
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  • 7
    Electronic Resource
    Electronic Resource
    Thin-film palladium and silver alloys and layers for metal-insulator-semiconductor sensors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1074-1083 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of Ag to Pd in the gate metal of a metal-insulator-semiconductor gas sensing diode can improve the performance and change the selectivity of the sensors for a variety of reactions. Data on the response of diodes with 12 different ratios of Ag to Pd in alloys and layers of Pd and Ag to hydrogen and other gases are reported. Diodes with as much as 32% Ag respond very well to H2 gas and the films are much more durable to high hydrogen exposure than pure Pd films. Improvements in the rate of response and aging behavior are found for certain Ag combinations; others give poorer performance. The presence of Ag on the surface changes the catalytic activity in some cases and examples of H2 mixed with O2 and/or NO2, propylene oxide, ethylene, and formic acid are given. Such selectivity forms the basis for miniature chemical sensor arrays which could analyze complex gas mixtures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339738
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  • 8
    Electronic Resource
    Electronic Resource
    Electromagnetic resonance enhanced photoabsorption in planar metal–oxide–metal tunnel junction detectors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2022-2029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present calculations of surface plasmon and guided wave enhanced light absorption in the metal electrodes of planar aluminum–aluminum oxide–silver and aluminum–aluminum oxide–aluminum tunnel junctions. We consider excitation, under conditions of attenuated total reflection, of both the "fast'' and "slow'' surface plasmons of the junction, and of TE and TM guided modes supported by a dielectric film adjoining the junction. We find that 〉97% absorption may be obtained at resonance in a single electrode of a practical device, the thickness of which is only a fraction of the expected photocarrier mean free path, and show how the angular width of the absorption peak may be varied by changing the adjacent dielectric media. We also show how resonant absorption may be used in a biased planar device for the detection of radiation at normal incidence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337999
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  • 9
    Electronic Resource
    Electronic Resource
    High frequency capillary waves: A light scattering spectrometer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2789-2795 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Modifications to a light scattering apparatus to permit study of liquid surface fluctuations of significantly higher wave number than hitherto are described. Various problems associated with the modified system are discussed. Typical results are presented for capillary wave propagation on the surface of two different fluids, demonstrating the satisfactory functioning of the spectrometer despite these problems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144364
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  • 10
    Electronic Resource
    Electronic Resource
    Intrusions in the active layer of channeled-substrate-planar laser diodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1093-1096 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeled-substrate-planar laser diodes from various wafers were observed to develop a node or dark spot in their near-field patterns after failure during lifetesting. "Node'' devices from each wafer were angle lapped and stained in an attempt to uncover a physical mechanism for this common failure symptom. Optical microscopic examination of the beveled cross sections revealed that an intrusion, in the form of a spike at the tip of the zinc diffusion front, had penetrated into the active layer of these diodes. The node observed in the near-field pattern appears to be in a position corresponding to the location of the spike in the active region. In addition, cathodoluminescence measurements on other "node'' diodes revealed a dark line region approximately 2 μm wide running parallel to and in the middle of the 5-μm contact stripe. We believe that this dark line region is representative of an area of nonradiative recombination which occurs in the portion of the active layer containing the intrusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339740
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