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  • American Institute of Physics (AIP)  (64)
  • 2005-2009
  • 1985-1989  (64)
  • 1
    Electronic Resource
    Electronic Resource
    Transport properties of CeAl3 under pressure (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3899-3901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport experiments on CeAl3 samples under quasihydrostatic pressure up to 1.63 GPa are reported. Magnetoresistivity measurements in magnetic fields up to 7.3 T from 40 mK to 4 K were performed. Resistivity and thermopower were measured from 1.5 to 300 K. Taking the low-temperature resistivity as ρ=ρ0+AT2, A increases initially with pressure as expected from the zero pressure thermal dilatation. Above 0.2 GPa, both A and ρ0 decrease dramatically with pressure. It is, however, noteworthy that a T2 law of the resistivity can hardly be extracted from the data above 0.2 GPa. The positive low-temperature magnetoresistivity also varies strongly with pressure. At 0.82 GPa the low field bump has disappeared and the magnetoresistivity is still positive up to 2.5 K. The thermopower shows an even more drastic pressure dependence. The negative bump around 3.5 K at zero pressure becomes positive above 0.3 GPa and a complex temperature dependence develops. The temperature variation cannot be scaled by a unique pressure-dependent parameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340597
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  • 2
    Electronic Resource
    Electronic Resource
    New perturbation method for planar phase-change processes with time-dependent boundary conditions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4375-4381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new perturbation method is developed for one-dimensional and conduction-controlled melting in a planar slab. The approach is suitable for boundary conditions with small amplitude but almost arbitrary time dependence. The results are uniformly valid in time. The method is applied to the case of time-dependent heat flux boundary conditions and illustrated by the example of a steplike heat pulse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339071
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  • 3
    Electronic Resource
    Electronic Resource
    High-resolution imaging of the EL2 distribution in thin semi-insulating GaAs wafers: A comparison with x-ray topography (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2954-2958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed comparison of two-dimensional near-infrared absorption maps and x-ray topographs of commercial semi-insulating (100) GaAs wafers grown by the liquid-encapsulated Czochralski technique is reported. The absorption measurements with a spatial resolution up to 100×100 μm2 were performed using a highly sensitive silicon diode array as the detector element. Fluctuations of the EL2 concentration up to 60% are found in conventional undoped wafers. In preannealed wafers, these fluctuations are reduced by a factor of 2, approximately. The spatial one-to-one correlation of the EL2 distribution with grown-in dislocation networks, which is observed in both cases, is discussed. In indium-doped wafers of low dislocation density, the homogeneity of EL2 is better than 5% in the central area of about 40 mm in diameter. By investigating the EL2 distribution near peripheral slip lines, it is definitely established that gettering is a relevant process leading to nonuniformities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337768
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  • 4
    Electronic Resource
    Electronic Resource
    Reactive ion beam etching with chlorinated gases: Beam characterization and etching of aluminum (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4151-4157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle beams generated in a Kaufman-type ion gun from CC12F2, CCl4, and BCl3 have been characterized with a mass spectrometer. The composition of ionic and neutral species emanating from the gun varies strongly with the gun operating conditions. For all three gases major components are Cl+2 and Cl+ among the ions, and Cl2 among the neutrals. Various other ions and neutral fragments of the form CClx Fy, CClx, and BClx are also observed. Changes in the gas composition versus the magnetic field in the gun and versus gas pressure are related to corresponding measurements of the etch yield of aluminum. These results, together with data on the etch yield versus ion energy and incident angle, suggest that the overall etching includes contributions from physical sputtering, direct reactive ion etching, and, especially with CCl4 and to some extent with BCl3, from chemical sputtering. The implications of the beam diagnostics for other experiments, etching such materials as III-V compounds, silicon, and silicides are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336674
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  • 5
    Electronic Resource
    Electronic Resource
    On entropy generation in phase-change heat conduction (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4053-4061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper addresses the entropy production in heat conduction, accompanied by melting/solidification. The expressions for the time derivative of the entropy and the excess entropy production in selected Stefan problems are derived. These physical quantities are shown to be meaningful evolution characteristics for several phase-change processes that evolve towards equilibrium or self-similar asymptotic attractors. Prigogine's theorem of minimal steady-state entropy production is shown to be invalid for the phase-change heat conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343989
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  • 6
    Electronic Resource
    Electronic Resource
    Initial epitaxial growth of copper silicide on Si{111} studied by low-energy electron microscopy and photoemission electron microscopy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4747-4752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth, including submonolayer epitaxial growth, of Cu silicide on Si{111} of standard wafer thickness is studied in situ by low-energy electron microscopy and photoemission electron microscopy. At elevated temperatures up to about 850 K copper silicide grows as a two-dimensional (2D) layer with a "(5×5)'' structure followed by epitaxy of three-dimensional (3D) Cu3Si crystals. Atomic steps initially present on the wafer surface bunch into groups of 2 and 3 and facet along the Si〈110〉 directions. Except for steps, monolayer silicide films appear defect- and pinhole-free down to the resolution limit. Films grown by depositing Cu onto substrates held at room temperature followed by annealing differ in morphology and have 500 times the number of 3D islands as do films grown at the annealing temperature. Above 850 K the Cu dissolves into the bulk. Upon cooling Cu segregates to the surface as a 2D silicide with a "(5×5)'' structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343227
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  • 7
    Electronic Resource
    Electronic Resource
    Perturbative analysis of planar phase change processes with time-dependent temperature at the boundary (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4832-4837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The perturbation method developed recently for analysis of planar phase change processes is extended to the case of time-dependent temperature boundary conditions. Approximate solutions uniformly valid in time are derived. The role of time scales, that of the driving signal and the (time-dependent) response time of the emerging phase, in the dynamics of a weakly nonlinear melting process is clarified. The short and long time asymptotics are studied in detail. The analytical results are compared with the numerical solution for the problem of melting in a semi-infinite slab induced by a periodically varying boundary condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341230
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: Molecular beam translational spectroscopy of physisorption bound states of molecules on metal surfaces. I. HD on Cu(111) and Au(111) single crystal surfaces [J. Chem. Phys. 85, 2249 (1986)] (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 6678-6678 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454762
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  • 9
    Electronic Resource
    Electronic Resource
    The iron–hydrogen system: Lattice location of hydrogen, heat of formation, and hydrogen–hydrogen binding energy (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 2161-2167 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic structure of the iron–hydrogen system has been performed in terms of band structure calculation based on the extended Hückel formalism. Heat of formation for a hydrogen atom at octahedral and tetrahedral positions in bcc and hcp iron lattice has been estimated. Allowing the iron lattice to relax, we minimize the energy of the system in terms of a variable lattice parameter. The heat of formation is less endothermic for hydrogen located at tetrahedral interstitial position than for hydrogen at octahedral position. Moreover, the effect of hydrogen is to stabilize the hcp phase. We have performed calculations with different geometrical arrangements, in terms of the distance between hydrogen atoms. Binding energies between hydrogen atoms at nearest and next-nearest interstitial positions are always found unstable. Numerical results obtained in the case of hcp structure are discussed in terms of recent Mössbauer experiments. The physical origin of the sign of the heat of formation in terms of charge transfer is presented. For this we use a model of a Fe4H cluster.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452114
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  • 10
    Electronic Resource
    Electronic Resource
    Molecular beam translational spectroscopy of physisorption bound states of molecules on metal surfaces. I. HD on Cu(111) and Au(111) single crystal surfaces (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 2249-2258 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new method for studying resonances in the scattering of molecules from metal surfaces is presented. In the experiment the velocity distribution of specularly scattered molecules with an initially broad distribution is analyzed with a time-of-flight technique and reveals sharp dips and peaks with a width of 〈0.25 meV attributed to Feshbach resonances. The present results for HD–Cu(111) and HD–Au(111) are analyzed by comparison with a close coupling calculation to provide potential well parameters. The method has been used to study the surface temperature dependence of one of the resonances down to 40 K and provides insight into a possible elementary step in physisorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451121
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