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  • American Institute of Physics (AIP)  (3)
  • 1985-1989  (3)
  • 1989  (3)
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Erscheinungszeitraum
  • 1985-1989  (3)
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Dynamic depth profile measurements of implanted deuterium in nickel (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1893-1897 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Depth profiles of 10-keV deuterium implanted in nickel were obtained during implantation through elastic recoil detection between 233 and 313 K. The profiles were allowed to reach saturation at each measured temperature. At the lowest temperature, measurements with various implantation fluxes were performed. Aside from surface peaks, the depth profiles show a uniform density of deuterium in the implanted layer and the shape of these profiles is independent of the sample temperature or implantation fluence or flux. The temperature and fluence dependence could be successfully reproduced with a trapping-detrapping model considering three different trap binding energies. Two of the model parameters are in good agreement with previous calculations performed to reproduce reemission measurements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342900
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    On the growth of segregated C layers on top of Fe films on pyrolytic graphite samples during high-fluence D+ irradiation at elevated temperature (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3400-3406 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: On Fe films evaporated on pyrolytic graphite, thick C layers segregate during high-temperature (above about 800 K) light ion irradiation if the penetrating ions are energetic enough to reach the Fe-graphite interface. The thickness of the C segregated layer and the C depth distribution in the Fe film have been determined with 2-MeV 4He+ Rutherford backscattering. A steady-state carbon overlayer is reached at high fluences (above about 1019 particles/cm2), the thickness of which depends on the energy of the irradiating beam for a given thickness of the Fe evaporated film. The anisotropic structure of the pyrolytic graphite substrate influences the thickness of the steady-state C overlayer, thicker C layers being measured for edge-oriented C substrates. Using the Monte Carlo code trim, the production of defects in the graphite substrate has been calculated for different thicknesses of the C overlayer. The total amount of defects produced in the graphite substrate has been identified as the parameter regulating the growth and the steady-state value of the C overlayer. With the depth distributions of defect production generated by trim as source functions, the diffusion of C interstitials in graphite under the influence of recombination with vacancies has been modeled. The segregating C fluxes are identified with the fluxes of interstitials arriving at the Fe/graphite substrate interface for a suitable choice of the parameters in the diffusion equation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342656
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Ion-induced depletion of hydrogen from a soft carbonized layer (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3833-3837 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Soft carbonized layers prepared in a glow discharge, with a hydrogen concentration of H:C∼4/3, are exposed to helium ion bombardment at energies between 0.3 and 2.6 MeV. A strong ion-induced depletion of up to 3×103 H atoms per incident 4He+ ion is observed by means of high-energy ion beam analysis. The hydrogen release is shown to be a local process, with the electronic energy deposition as the main responsible mechanism. The results are successfully compared to a model which takes into account local bond breaking and retrapping and the local formation of hydrogen molecules.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343399
    Standort Signatur Erwartet Verfügbarkeit
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    Artikel (Nationallizenzen)
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