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  • American Institute of Physics (AIP)  (2)
  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 7485-7495 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption kinetics for ethylsilane (ES), diethylsilane (DES), and diethylgermane (DEG) on Si(111) 7×7 were studied using laser-induced thermal desorption (LITD) and temperature programmed desorption (TPD) techniques. The initial reactive sticking coefficients were determined as a function of surface temperature using LITD measurements. In these experiments, the ethyl coverage vs adsorption time was monitored using CH2=CH2 (ethylene) LITD signals that were produced by the β-hydride elimination of the surface ethyl groups, e.g. Si–CH2CH3(ad)→Si–H(ad)+CH2=CH2(g). The initial reactive sticking coefficients were S0≈2×10−3, 4×10−3, and 5×10−2 for DES, ES, and DEG, respectively, at 200 K. As expected from a precursor-mediated adsorption model, the initial reactive sticking coefficients were observed to decrease with increasing surface temperature. Experiments with preadsorbed hydrogen also demonstrated that the initial reactive sticking coefficients of DES and DEG were reduced as a function of hydrogen coverage. This behavior indicated that alkylsilane and alkylgermane adsorption on Si(111) 7×7 requires free dangling bond sites. LITD experiments revealed that the ethyl surface coverage saturated after large exposures. The saturation coverage corresponded to a deposited Si or Ge coverage of aitch-theta=0.13 monolayer for DES and DEG and was independent of surface temperature between 200–400 K. DEG adsorption cycles were used to deposit increasing amounts of Ge on Si(111) 7×7. The deposited coverage was examined using H2 TPD studies which indicated that the germanium may be forming islands. LITD experiments were also used to monitor ethyl surface diffusion on Si(111) 7×7 after DES adsorption. No evidence of significant ethyl surface mobility (D≤1.0×10−10 cm2/s) was found for surface temperatures as high as 600 K.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2002-2004 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Germanium was deposited on Si(111) 7×7 by the adsorption and thermal decomposition of diethylgermane [(CH3CH2)2GeH2] (DEG). The DEG reaction products were CH2(large-closed-square)CH2 and H2, which desorbed at 700 and 800 K, respectively, as observed by laser-induced thermal desorption and temperature programmed desorption techniques. The desorption of atomic Ge was also monitored at approximately 1200 K. The production of ethylene was consistent with a β-hydride elimination mechanism for the surface ethyl groups, i.e., Ge—CH2CH3→GeH+CH2(large-closed-square)CH2. The initial sticking coefficient of DEG decreased with increasing surface temperature and a saturation coverage was obtained after exposures of E(approximately-greater-than)700 L at 200 K. This saturation behavior indicates that DEG may be useful for the controlled growth of Ge atomic layers on silicon surfaces.
    Type of Medium: Electronic Resource
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