Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 1431-1433
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Deep-level transient spectroscopy has been used to characterize n-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si-doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24±0.03 eV and the capture barrier energy was 0.06±0.02 eV. The trap concentration was less than 3×1014 cm−3 and was found to be independent of Si doping for concentrations up to 4×1018 cm−3 and to oxygen contamination in the range (0.5–1.5)×1018 cm−3.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.355330
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