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  • 1
    Electronic Resource
    Electronic Resource
    The normal to local mode transition in AB2 triatomic molecules: The susceptibility of eigenstates to symmetry breaking perturbations (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 869-875 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We argue that the physical significance of the normal to local mode transition in triatomic molecules AB2 lies in an enhanced susceptibility of eigenstates to symmetry breaking perturbations. States of local character have higher susceptibilities than states of normal character. The quantum mechanical condition for the normal to local mode transition is formulated. The issue of stability is addressed from a classical, semiclassical, and quantum mechanical point of view. The question of instability of the unperturbed quantum system is decided individually for each eigenstate. The relevance for experiments is outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467739
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  • 2
    Electronic Resource
    Electronic Resource
    Self-diffusion in the compressed fluid lower alkanes: Methane, ethane, and propane (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5643-5649 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Self-diffusion coefficients D for CH4, C2H6, and C3H8 have been measured at pressures up to 200 MPa and 450 K by the spin echo technique with pulsed field gradients. The experimental results for propane agree with data obtained by recent M. D. simulations with a three-site Lennard-Jones-skeleton model. In the p,T range studied, the experimental self-diffusion coefficients can be described quantitatively by the interacting sphere model and the rough hard sphere model. This implies, that even a single Lennard-Jones potential and diameter can represent the dynamic data for propane quantitatively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460474
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering from PbTiO3 thin films prepared on silicon substrates by radio frequency sputtering and thermal treatment (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 394-399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been carried out on PbTiO3 thin films prepared on platinum-coated (100) silicon by radio-frequency (rf)-magnetron sputtering without substrate heating and a post-deposition thermal treatment. The Raman spectra obtained from the thin film are characteristic of powder Raman spectra: In comparison with the single crystal spectra, the intensity of the background is relatively high at low frequencies and the Raman lines are broad. The lattice phonon modes corresponding to the observed lines are identified by comparison with the data on single crystals and powder. The Raman frequencies for the thin film remarkably shift to low frequencies compared with single-crystal data. It is shown that the phenomenon of the frequency shifts is similar with the hydrostatic pressure effect on single crystals of PbTiO3. The result indicates that the thin films are composed of grains that are stressed depending on the grain size by neighboring grains of different orientations when they are split up into ferroelectric domains at the paraelectric-to-ferroelectric transition. This stress effect is significant even for a grain size of ∼0.5 μm. It is found that the lowest frequency E transverse optical (TO) mode in the thin film shows softening with increasing temperature as was reported in previous studies on single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353862
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of TiO2 anatase thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2042-2047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical spectroscopic studies of TiO2 anatase thin films deposited by sputtering show that the metastable phase anatase differs in electronic properties from the well-known, stable phase rutile. Resistivity and Hall-effect measurements reveal an insulator–metal transition in a donor band in anatase thin films with high donor concentrations. Such a transition is not observed in rutile thin films with similar donor concentrations. This indicates a larger effective Bohr radius of donor electrons in anatase than in rutile, which in turn suggests a smaller electron effective mass in anatase. The smaller effective mass in anatase is consistent with the high mobility, bandlike conduction observed in anatase crystals. It is also responsible for the very shallow donor energies in anatase. Luminescence of self-trapped excitons is observed in anatase thin films, which implies a strong lattice relaxation and a small exciton bandwidth in anatase. Optical absorption and photoconductivity spectra show that anatase thin films have a wider optical absorption gap than rutile thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356306
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  • 5
    Electronic Resource
    Electronic Resource
    Raman scattering study of lead zirconate titanate thin films prepared on silicon substrates by radio frequency magnetron sputtering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6625-6631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering is used to characterize thin films of PbTi1−xZrxO3. The films have been prepared on platinum-coated (100) silicon by radio-frequency (rf)-magnetron sputtering without substrate heating followed by a post-deposition annealing at 600–650 °C. As the concentration of Zr is increased, the Raman peaks broaden and their intensities decrease more rapidly compared with bulk ceramic or powder samples, while the background intensity increases. The observations show that the crystal structure of the films is locally deformed and significantly disordered. With increasing x, the soft E(TO) mode shifts to lower frequencies. An additional Raman peak appears besides the phonon peaks expected in a perfect crystal. The soft mode strongly couples with the extra mode, similarly with the case of ceramic samples. The results are related to features of the thin films such as a frustrated phase transition, i.e., smaller differences between the lattice parameters a and c in comparison with powder data, and an electrical behavior showing a diffuse ferroelectric-to-paraelectric transition with a broad peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355103
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of thin-film thermal conductivity on the optical damage threshold of a-Si film on c-Si substrate at 1064 nm (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5159-5163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical damage tests have been performed on a pair of a-Si film on c-Si substrate samples to determine their respective damage-threshold values. The thermal properties of the two samples have been determined previously in a noncontact, nondamage fashion [B. S. W. Kuo, J. C. M. Li, and A. W. Schmid, Appl. Phys. A 55, 289 (1992)], thus providing opportunity to relate the damage threshold to the thermal properties while controlling other factors. The samples have similar film thermal conductivity but much different interface thermal resistance. The damage test results show that the one with higher interface resistance is more vulnerable to high laser-pulse energy. A heat-transfer model involving both film thermal conductivity and interface thermal resistance has been developed to predict the damage-threshold dependence on film thickness. The result using predetermined thermal properties agrees with experimental data qualitatively. It also indicates that the interface property is the dominant factor here, while the impurity-dominant model cannot be applied, since no difference would be predicted for the two samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354279
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  • 7
    Electronic Resource
    Electronic Resource
    Photoemission studies of the ZnO/CdS interface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5945-5948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The highest conversion efficiencies of solar cells based on Cu(In,Ga)Se2 have been achieved using multilayer CdS/ZnO front contacts. The formation of the heterojunction interface between polycrystalline ZnO and CdS has been studied with x-ray and ultraviolet photoemission spectroscopy. The valence band offset between ZnO and CdS has been determined to be 1.2 eV. No chemical reactions at the interface between ZnO and CdS have been detected up to 200 °C. In order to obtain a standard reference for the band discontinuities the valence band offsets of ZnO and CdS relative to Ge have been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358417
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  • 8
    Electronic Resource
    Electronic Resource
    Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2902-2909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new model for the formation of heterojunctions in polycrystalline CuInSe2 thin films on the basis of surface analysis experiments is presented. In situ photoemission measurements of CuInSe2 clearly show the existence of an In-rich n-type surface layer on samples relevant for solar-cell devices. Furthermore, this layer has been identified as an ordered vacancy compound (OVC) with a band gap of about 1.3 eV. The previous model of the CuInSe2/CdS solar cell with a p-n heterojunction between p-type CuInSe2 and n-type CdS is replaced by the model of a chalcopyrite/defect chalcopyrite heterojunction between p-type bulk CuInSe2 and the In-rich n-type OVC. The existence of this junction was proven directly by evaporating an ohmic metal contact onto the surface n-type layer and measuring the spectral quantum efficiency and electron-beam-induced current of this device. The band offsets of CuInSe2-based devices have been determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353020
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  • 9
    Electronic Resource
    Electronic Resource
    Atomic scale study of local TiSi2/Si epitaxies (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1820-1825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TiSi2/Si system is investigated using high-resolution transmission electron microscopy (HRTEM) and electron diffraction in both cross-section and flat-on modes. The results show that the large crystallographic differences between both crystals and the complexity of the reaction path are not obstacles to the formation of flat and well-defined interfaces. (1¯01) TiSi2 proves to be a preferential plane for epitaxial growth on Si (111). In this case, the terminal TiSi2 plane at the interface is composed of single atomic species. It is proposed that the reasons leading to such an epitaxy are related to the small discrepancy of atomic densities and interplanar spacings characteristic of these planes. Observation of local epitaxial relationships are reported and investigated using a lattice matching model. It turns out that they minimize the two-dimensional misfit at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345609
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  • 10
    Electronic Resource
    Electronic Resource
    Linear and quadratic magnetoelectric (ME) effect in Ni-Cl boracite : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6410-6412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quasistatic and dynamic measurements of the magnetic field induced magnetoelectric polarization (MEH effect) have been performed in the weakly ferromagnetic/ferroelectric/ferroelastic phase of point group m'm2' of Ni-Cl boracite between 1.8 and 9 K (=TC) and above. For the first time the quadratic MEH effect of Ni-Cl boracite has been measured and separated from the linear one. The results allow us to discard the existence of a previously assumed antiferromagnetic phase mm2 between 9 and 25 K. Above 9 K, the phase is paramagnetic (mm21'). The coefficients of the linear (α23, α32) and quadratic (β311, β322, β333, and β223) MEH effect are given for 4.2 K. α32 and β322 are also given vs temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349911
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