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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 426-428 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond pump probe measurements on waveguides containing a single GaAs/GaAlAs quantum well have enabled us to determine for the first time both electron and hole escape times from biased quantum wells. Contributions from excitonic saturation and field screening by photogenerated carriers can be clearly identified in the nonlinear transition signal and are quantitatively modeled. Preliminary analysis suggests that thermally assisted escape is dominant at room temperature, but discrepancies are found with conventional thermionic emission models.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 3214-3227 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We discuss the technique of resonance Raman saturation spectroscopy and present experimental results that probe relaxation processes in heme proteins following electronic excitation in the Soret band. The observable relaxation time scales are limited by the laser excitation rate kL rather than by the laser pulse width (∼10 ns). Analysis of the data using a theory that separates the electronic and vibrational relaxation leads to electronic ground state recovery times τ=6.4±2.0 ps for ferrocytochrome c, τ=4.8±1.5 ps for deoxymyoglobin, and τ=2.0±0.7 ps for deoxyhemoglobin. The Raman depolarization ratio is predicted to increase at high laser flux, due to the preparation of a partially oriented sample by photoselective excitation. Such effects are observed in heme systems and the relaxation times extracted from the depolarization analysis are in good agreement with those derived from measurements of Raman intensity saturation. Studies of the asymmetric broadening of the ν4 mode of cytochrome c at high laser flux reveal that the line shapes in the Stokes and anti-Stokes region are inequivalent.Time-reversal symmetry dictates that this broadening is due to an underlying Raman band associated with an excited electronic state that is populated at high laser flux. Similar line broadening effects, observed in hemoglobin and myoglobin samples, are also shown to arise from Raman scattering of excited electronic states rather than Rabi broadening [Alden et al., J. Phys. Chem. 94, 85 (1990)] or anharmonic coupling to vibrationally hot low frequency modes [Petrich et al., Biochemistry 26, 7914 (1987)]. Quantitative analysis of Stokes and anti-Stokes Raman scattering determines the heme vibrational temperature as a function of laser flux and leads to a description of the Raman intensities that differs significantly from that of Lingle et al. [J. Phys. Chem. 95, 9320 (1991)], which ignores electronic saturation effects and is based on the scattering properties of a two-level system. For cytochrome c, we use a simple thermal transport model to extract a value for the product of the heme area and the coefficient of surface heat transfer between the heme and the surrounding protein. This leads to a ∼4 ps time constant for the short-time exponential phase of heme cooling.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5596-5600 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of amorphous BaTiO3 thin films deposited on Si substrates were studied as functions of annealing temperature. The film thickness decreased monotonically as the annealing temperature increased up to 600 °C. This reduction is believed to correlate with the densification process observed in the amorphous films during annealing. After the 500 °C annealing, a partial crystallization process was observed. It was also found that the dielectric constant and the index of refraction of the film showed significant changes as the annealing temperature increased from 400 to 500 °C. Correlations between the film density, index of refraction, and the dielectric constant are discussed. A severe reaction at the interface between the film and Si substrate was observed in the 750 °C annealed sample.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2938-2940 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe gate oxide prepared at low temperatures (25–400 °C) by electron cyclotron resonance (ECR) plasma is reported. 100–200 A(ring) oxides were grown on Si0.8Ge0.2 substrates by ECR oxidation under different bias conditions. The electrical properties of the ECR grown oxides are strong functions of processing conditions and post-processing treatments. High frequency (1 MHz) and quasistatic capacitance-voltage ECR grown oxides' measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and interface state densities are comparable to those of ECR grown metal-oxide-semiconductor capacitors on silicon with an aluminum gate.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3265-3267 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500 °C. Both Si and Ge are shown to be fully oxidized, forming SiO2 and GeO2. Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500 °C, the oxide is stoichiometric and it does not lose its GeO2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1996-1998 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1064-1065 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well separated BaTiO3 microcrystallites were observed by transmission electron microscopy (TEM) in rapidly annealed, amorphous BaTiO3 thin films. The crystallization temperature for amorphous BaTiO3 is between 400 °C and 500 °C.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2639-2641 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high charge storage density was achieved in BaTiO3 thin films on Si substrates prepared by a reactive partially ionized beam deposition technique and rapid thermal annealing (RTA) treatment. The films, being deposited at a low substrate temperature, were amorphous. The films were then annealed by using RTA in N2 ambient at 500 °C for 1 min. After the annealing the relative dielectric constant of the films was 20 and the thickness of the films was 310 A(ring). The charge storage density of the films was calculated to be as high as 5.6 μC/cm2 at 10 V. The leakage current density was on the order of 10−7 A/cm2 at an applied electric field of l MV/cm. The potential application of this film in high density memory is discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2336-2338 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-source reactive partially ionized beam deposition has been employed to deposit thin BaTiO3 films on the Si(100) substrate at room temperature. It is shown that with a small amount (3%) of Ti and oxygen ions in the beam one can dramatically control the electrical properties of the films. From the capacitance versus voltage (C-V) characteristics, the flatband voltage and the total interface charge density were measured to be 0.3 V and 1×1011/cm2, respectively. These ferroelectric compound oxide thin films with high-dielectric constant are potentially useful in high density memory applications.
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