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  • American Institute of Physics (AIP)  (8)
  • 1990-1994  (8)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 2299-2307 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electric field induced superposition of holograms recorded by spectral hole burning is investigated. Holograms have been burned at adjacent positions in a plane defined by wavelength and electric field. Application of an appropriate electric field to the sample causes the components of adjacent holograms to overlap as the spectral holes split due to Stark shifts of molecular transition frequencies. The diffraction efficiency of such superimposed holograms depends on their relative phase and has been studied theoretically and experimentally. It is shown that for zero phase difference, constructive interference leads to a strong diffraction efficiency whereas for a phase difference of π, the gratings cancel leading to zero diffraction efficiency. Experiments have been performed with the dye cresyl violet in a polyvinylbutyral film at a temperature of 1.7 K and the data are compared with computer simulations.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2748-2755 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The first paper in this series presented a detailed analysis of the diffraction efficiency of a single holographic grating obtained by spectral hole burning. This paper covers the influence of phase changes which occur during the burning of a single hologram, and the interaction of spectrally adjacent two laser induced gratings. A theoretical description of the holographic efficiencies which takes into account the influence of the relative phases between the two gratings. Experimental results are presented and discussed in terms of the theory.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 4365-4372 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Pure and mixed monolayers of 4-n-octyl-4'-cyanobiphenyl (8CB) and stearic acid (SA) at the air–water interface have been investigated by a combination of surface balance measurements and polarization sensitive, optical second harmonic spectroscopy. These measurements make it possible to carry out in situ studies of the formation of the monolayer and to identify different regimes upon compression of the film. These regimes cover the whole range from an isotropic monolayer, a highly oriented phase, up to phase separation at a critical surface pressure π*. It is shown that the polarization dependence of the second harmonic intensity is a very sensitive method to investigate the orientation of the optically nonlinear 8CB chromophores in the mixed film as a function of surface pressure as well as concentration. A comparison of monolayers of different mole fractions of 8CB and SA shows that the alignment of the 8CB molecules in the mixed film depends on the surface pressure and not on their concentration in the monolayer only. This behavior can be explained by assuming an ideal mixed monolayer, where the orientation of the 8CB chromophores is due only to the hydrophobic interaction with the alkyl chains of the SA. In addition, the critical surface pressure of the mixed film πmix* can be calculated as a function of the 8CB mole fraction x8CB.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 8521-8531 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Laser-induced thermal desorption (LITD) techniques were used to study the adsorption, desorption, and surface diffusion kinetics of NH3 on MgO(100) single-crystal surfaces. Isothermal LITD adsorption measurements revealed that the sticking coefficient of NH3 on MgO(100) was constant vs coverage and decreased with increasing surface temperature. The adsorption kinetics were consistent with a mobile precursor intermediate. In addition, the saturation NH3 coverage on MgO(100) was strongly dependent on temperature, and decreased by a factor of 5 as temperature increased from 130 to 165 K. Isothermal and linear temperature ramp LITD experiments indicated that the desorption kinetics of NH3 from MgO(100) could be modeled using a first-order rate law with a coverage-dependent desorption activation energy. The coverage dependence of the desorption activation energy was consistent with repulsive lateral interactions between NH3 adsorbates on the MgO(100) surface. The surface diffusion of NH3 on MgO(100) was also examined using LITD techniques. In contrast to recent predictions of NH3 surface diffusion on MgO(100), no evidence of NH3 surface mobility (D≤10−9 cm2/s) was observed for temperatures as high as 165 K.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3991-3999 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following an annealing process of several hours duration at a temperature of at least 1100 °C, reactively sputtered cerium-oxide films with film thicknesses ranging from 0.5 to 3 μm show a dependence of electric conductivity on oxygen partial pressure similar to that of polycrystalline bulk material within the temperature range studied (700 to 1000 °C). But films with comparatively small grain structures have specific electrical conductivities that are as much as an order of magnitude higher than those of large-grained structures, let alone bulk materials. This outcome justifies the supposition that the carrier transport in CeO2−x thin films occurs in a grain barrier layer within which electrons are enriched. This negative carrier enrichment layer may be due to a positive surface charge. An investigation of the interaction between oxygen vacancies of CeO2−x thin films and the oxygen of the environment showed that for layer thickness of from 1 to 3 μm and temperatures of 700–1000 °C, the reaction of the oxygen molecules at the surface is always the kinetics-governing step. Above 950 °C the transport reaction through the laminar boundary zone on the surface determines the reaction kinetics. Under these conditions the volume diffusion of oxygen vacancies in the thin film proceeds more rapidly than the surface reaction or the gas-phase transport of oxygen molecules.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 300-305 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga2O3 is a purely n-conducting metal oxide at high temperatures. Increasing interest is being shown in this material as the basic material for gas sensors since its electrical conductivity is gas dependent. To investigate its electrical conductivity mechanism in the temperature range between 800 and 1000 °C, conductivity and Hall measurements were performed on single crystals and on polycrystalline ceramics. In the conductivity measurements, identical results were obtained with dc and low-frequency ac, thus confirming the notion of purely electron current transport. A thermally activated specific conductivity is observed in both cases, that of the single crystals lying around three and a half orders of magnitude above that of the ceramic. The carrier densities are determined from the Hall measurements, a thermally activated behavior always being observed. The carrier density of the ceramic is only 2×1013 cm−3 at 1000 °C, that of the single crystals lying somewhat more than three orders of magnitude above this. The Hall mobilities are determined by combining the conductivity and Hall measurements. Within the limits of measurement accuracy, the Hall mobilities in the ceramic and the single crystals are shown to be identical. The Hall mobility is about 10 cm2/V s at 1000 °C with a thermal activation energy of about 0.6 eV. The results suggest that conduction in Ga2O3 at high temperatures is well described by the small polaron model.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7453-7459 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Among the most critical parameters in the fabrication of rf-sputtered SrTiO3 films is the argon/oxygen ratio in the sputter gas and the substrate temperature, both during sputtering and during postannealing. After sputtering at 500 °C, SrTiO3 layers on Al2O3 substrates are partially crystalline. In this case the SrTiO3 lattice is enlarged compared to the bulk material. With increasing temperatures of postannealing, the crystallites grow and the lattice shrinks. In particular, films that are sputtered with a sputter gas containing oxygen show an additional phase of TiO2 when they are annealed at temperatures of more than 1000 °C. This paper shows for the first time results of the investigation of sputtered SrTiO3 films on Al2 O3 substrates as a function of oxygen partial pressure P(O2 ). The measurements performed on the sputtered films indicate semiconducting properties in agreement with the bulk material: At temperatures between 700 and 1100 °C the electrical conductivity of sputtered layers changes from p-type to n-type as the oxygen partial pressure decreases from 1 to 10−15 bar. The enthalpy of oxidation in the SrTiO3 films is 1.24 eV, and the energy gap is 3.30 eV. These values are in agreement with those reported for bulk materials.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 9115-9125 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The surface diffusion of xenon on the Pt(111) surface was investigated using laser induced thermal desorption (LITD) and temperature programmed desorption (TPD) techniques. The surface diffusion coefficient at 80 K decreased dramatically from D=8×10−7 cm2/s at θ=0.05θs to approximately D=2×10−8 cm2/s at θ=θs, where θs denotes the saturation coverage at 85 K, corresponding to a commensurate monolayer coverage of 5.0×1014 xenon atoms/cm2. This coverage dependence was consistent with attractive interactions between the adsorbed xenon atoms and the existence of two-dimensional condensed phases of xenon on Pt(111). The kinetic parameters for surface diffusion at θ=θs were Edif=1.3±0.1 kcal/mol and D0=1.1×10−4±0.2 cm2/s. The magnitude of Edif at θ=θs represented the combined effect of the intrinsic corrugation of the adsorbate–surface potential and attractive interactions between the adsorbed xenon atoms. LITD experiments at θ=0.25 θs revealed diffusion kinetic parameters of Edif=1.2±0.2 kcal/mol and D0=3.4×10−4±0.5 cm2/s. The constant Edif at low and high coverage was attributed to the "breakaway'' of xenon atoms from the edges of condensed phase xenon islands. The coverage dependence of the surface diffusion coefficient for Xe/Pt(111) was explained by a multiple site diffusion mechanism, where collisions with xenon islands limit diffusional motion. Thermal desorption kinetics for xenon on Pt(111) were determined using TPD experiments. Using the variation of heating rates method, the desorption parameters were Edes=6.6±0.2 kcal/mol and νdes=1.3×1013±0.4 s−1, in good agreement with previous studies. The xenon TPD peak shifted to higher temperature versus initial coverage at a fixed heating rate, providing further evidence for attractive interactions between the adsorbed xenon atoms.
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