ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Study of Ni as a barrier metal in AuSn soldering application for laser chip/submount assembly (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3808-3815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of replacing Pt in the Ti/Pt/Au base and traditionally used metallurgical structure by Ni, while bonding InP laser chip to a submount with AuSn (80% Au) solder, has been investigated. Various Ni-based metal alloys have been prepared by evaporation. Reflow experiments were conducted in a chamber under forming gas-controlled ambient. The Ti/Ni/AuSn system provided much longer surface local freezing duration compared to the Ti/Pt/AuSn system. Scanning electron microscopy analysis revealed a smoother surface morphology for the Ti/Ni/AuSn system after the metal refroze. Auger electron spectroscopy depth profiles indicated the formation of a Ni-Sn-Au interacted layer. The interaction took place in two steps: the first stage was the dissolution of Ni into the Au-Sn liquid followed by precipitation of a Ni-Sn-Au intermetallic compound; the second stage was a solid-state interdiffusion of Sn, Au, and Ni which occured in the interacted layer and in the original Ni layer. The latter step was a diffusion-controlled process, resulting in a very slow growth rate. Both Au and Sn reacted to form Ni alloy layers of almost equal thickness, regardless of the reaction duration (up to about 5 min). This intensive reaction, however, did not lead to full consumption of the Ti interfacial layer, which provided an excellent adhesion layer between the submount and the metallurgical structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352279
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Omega head—an experimental 120-turn inductive head : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6397-6399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental 120-turn thin-film inductive heads have been built. The key features of this head are the 6-μm pitch helical coils and an omega-shaped, planar yoke structure having dual easy axes. Hardbaked photoresist insulator layers are used to encapsulate the yoke and to smooth out the wafer surface topography. Micro-Kerr studies show that the easy axis remains in the transverse direction in the yokes after multiple anneals. The P1/G/P2 is 3.8/0.3/3.8 μm, and the yoke length is close to 1 mm. The helical coils were built with a novel process that combines yoke/stud coplating and a photoresist planarization process. The coil resistance is 68Ω and the inductance is 5.5 μH. The yoke saturates at 5 mA. The heads were tested over disks having Mrt of 2.5 memu/cm2 and Hc of 1500 Oe. The write threshold current is 5.3 mA (peak-to-peak) and the overwrite is 30 dB. The isolated pulse amplitude Vpp is 10.3 μV/(TwV), where track width Tw is in μm and the linear velocity V in m/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355362
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Au-Sn/W and Au-Sn/Cr metallized chemical vapor deposited diamond heat sinks for InP laser device applications (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 563-567 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attempt to apply a more stable metallurgical soldering system than the traditionally used Ti/Pt/Au-Sn reactive system was explored by replacing the barrier metals in between the chemical vapor deposited diamond (CVDD) submount and the Au-Sn solder with either W or Cr layers. In the case of the W layer a thin layer of Ti was added to improve the adhesion of Au-Sn solder to the W layer. The CVDD/W(100 nm)/Ti(10 nm)/Au-Sn(1.5–2.2 μm) system was heat treated at 350 °C for durations of 5 s–5 min, simulating a bonding cycle, and the metallurgical interactions were analyzed. Some diffusion of the Ti was observed, but the W layer remained intact. Thus, due to the absence of interaction between the Sn or Au and the W barrier layer, the Au:Sn ratio was kept uniform for long duration heating ((approximately-greater-than)2 min). The Au-Sn solder tends to "ball up'' in local spots leading to the formation of local voids in the continuous solder layer over the W. In the case of the CVDD/Ti (100 nm)/Cr(200 nm)/AuSn(1.5–2.2 μm) structure a minimum interaction between the Au-Sn solder and the barrier was observed through a heating cycle at 350 °C for 5 min. This heat treatment, however, led to solder surface roughness in the order of about 5000 A(ring) between bump peak and valley, but the Au:Sn composition remained in the eutectic ratio of 70:30 at. %. Both soldering metallurgical systems gave a potential good bonding of InP laser diodes to CVDD heat sinks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355840
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Spatially resolved measurement of lattice damage in alpha-particle-irradiated type IIa natural diamond by confocal photoluminescence microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4050-4053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Confocal fluorescence microscopy has been used to measure the three-dimensional distribution of the H3 color center produced in type IIa natural diamonds by 5 MeV He+ irradiation at a total fluence of 8×1015 cm−2. The peak of the H3 emission occurs 16 μm below the surface of the irradiated side of the diamond, which is in fair agreement with the peak of the vacancy distribution predicted by a Monte Carlo calculation (transport of ions in matter or trim). The H3 distribution is broader in the direction normal to the surface (10 μm full width at half maximum) than the trim calculation. This is attributed to diffusion of vacancies caused by self-annealing during irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357353
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Studies into the use of waterborne coating formulations for the preparation of magnetic tape (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5578-5578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The objective of this research project is to replace the organic solvents used in modern tape manufacture with water, thereby eliminating the potential for solvent emissions. This has led to a search to identify tape components compatible with a waterborne coating process. The pigments were either cobalt-modified γ-Fe2O3 or barium ferrite, with the majority of the research focused on cobalt-modified γ-Fe2O3 formulations. A combination of sodium polyphosphate and Surfynol CT-136, a pigment grinding aid, were used as dispersing agents. The binders included commercial water-dispersed polyurethanes and a commercial ethylene-vinylchloride copolymer emulsion. A commercial waterborne melamine-formaldehyde was used as a cross-linking agent. Addition of the ethylene-vinylchloride copolymer to the polyurethane increased the tensile strength and Young's modulus of the unpigmented binder films. The melamine-formaldehyde cross-linker further enhanced the mechanical properties and increased the adhesion between the pigmented binder films and the polyester base film. In a 180° peel test, the adhesion easily exceeded the ITO specification for 8 mm helical scan magnetic tape.1 Rheological studies of the waterborne dispersions revealed that the viscosity was too low. Hydroxyethylcellulose, a water soluble polymer, was added as a thickener and this gave rise to a desirable thixotropic behavior in the dispersion. Waterborne dispersions were cast onto polyester base film, oriented in a 2000 G longitudinal magnetic field, and cured in a convection oven at 60 °C. Magnetic hysteresis loops showed a squareness of 0.875 and a switching field distribution of 0.324 for films containing cobalt-modified γ-Fe2O3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355645
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Tantalum nitride films as resistors on chemical vapor deposited diamond substrates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5208-5212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum nitride films were reactive sputter deposited onto chemical vapor deposited (CVD)-diamond self-standing thick layers, to be used as resistors for microelectronic applications. The TaN films had excellent morphology and were very stable through heating cycles at temperatures up to 400 °C for a few hours. Post-deposition sintering of the films at temperatures up to 300 °C stabilized the film resistance at values in the range of 75–85 Ω. The deposited film was later patterned with photoresist and dry etched, at rates of up to 70 nm min−1 and the resulting features served as masks for further self-aligned etching processes of the underlying CVD-diamond layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353747
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Erratum: "Tantalum nitride films as resistors on chemical vapor deposited diamond substrates'' [J. Appl. Phys. 73, 5208 (1993)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2736-2736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357041
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6719-6721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence is presented for the blocking of Cu diffusion into SiO2 and Si by Ta and Ta/W barriers. The anneal was performed at 450 °C for 30 min. Here, W is rejected as a potential barrier for Cu technology. A Cr layer as thin as 200 A(ring) is shown to limit diffusion into Si to ∼600 A(ring). The study also demonstrates the utility and versatility of secondary ion mass spectrometry for evaluating potential diffusion barriers, and the need for such corroborative characterization in light of the lesser sensitivity of Rutherford backscattering spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348973
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Properties of titanium nitride thin films deposited by rapid-thermal-low-pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3666-3677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium nitride (TiNx) thin films were deposited onto InP by means of the rapid-thermal-low-pressure-chemical-vapor-deposition (RT-LPMOCVD) technique, using the tetrakis (dimethylamido) titanium (Ti(NMe2)4 or DMATi) complex as the precursor. Depositions were successfully carried out at temperatures below 550 °C, pressure range of 5–20 Torr and duration of 50 to 90 s, to give layer thicknesses up to 200 nm and growth rates in the range of 0.8 to 4.5 nm/s. These films had a stoichiometric structure and contained nitrogen and titanium in a ratio close to unity, but also contained a significant amount of carbon and oxygen. The elements were spread uniformly through the films, the nitrogen was Ti bounded, and the carbon was partially titanium bonded and organic bonded as well. The film resistivity was in the range of 400–800 μΩ cm−2; the stress was always compressive, in the range of − 0.5 × 109 to − 2 × 1010 dyne cm−2, and the film had a good morphology. These layers performed as an ohmic contact while deposited onto p-In0.53Ga0.47As material, (Zn-doped 1.2 × 1018 cm−3), provided an excellent step coverage for high aspect ratio via holes and were deposited selectively onto the InP and based materials when using SiO2 mask. This represents the first report of TiNx films deposited in a commercial RT-LPMOCVD reactor using the DMATi precursor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349214
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Probability distributions and thermal transport in a turbulent grid flow (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 2255-2263 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent theoretical proposals concerning non-Gaussian statistics of passive scalars in random velocity fields are tested experimentally, by measuring the probability distributions of fluctuating temperature in an oscillating grid flow across which a steady temperature gradient is maintained. Pronounced exponential tails occur at sufficiently high Reynolds number R, and predominantly Gaussian statistics at low R. When the extended tails are present for the passive scalar, the corresponding velocity power spectrum shows reasonable scaling, and the velocity distribution is not far from Gaussian. The present paper provides a more complete characterization of the flow field than an earlier brief report [Phys. Rev. Lett. 67, 3507 (1991)], and also contains a description of additional features, such as the skewness of the distributions. Finally, the effective or eddy diffusivity of both heat and a molecular impurity are measured and compared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.858564
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...