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  • American Institute of Physics (AIP)  (3)
  • 1990-1994  (3)
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Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Very low saturation densities in strained InGaAs/AlGaAs multiple quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 997-999 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained samples with indium concentrations of 10% and 15%. Very low saturation densities, as low as 0.82×1017 cm−3, are reported for the InGaAs/AlGaAs quantum wells with an indium concentration of 15%. The reduction in the saturation density is attributed to the change in the valence band density of states and the fact that these samples were designed to be fully strained. A novel method of measuring the absorption without antireflection coatings is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110930
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3327-3329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain, strain relief, and barrier design on the carrier lifetime in InGaAs/(Al)GaAs multiple-quantum-well samples is investigated. Carriers lifetimes are measured in samples with varying amount of strain, due to increasing indium concentration in the wells, as well as in samples subject to strain relief, with thick barriers and GaAs barriers. Lifetimes of the order of 0.5 ns are measured. The lifetime is sensitive to the presence of indium in the wells but remarkably insensitive to the indium concentration, the strain in the samples, and the barrier composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109060
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Growth velocity variations during metalorganic vapor phase epitaxy through an epitaxial shadow mask (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 168-170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel shadow masking technique is proposed for the local variation of growth velocity in GaAs/AlGaAs structures grown on GaAs by metalorganic vapor phase epitaxy. This mask makes use of epitaxially grown spacer and mask layers and windows in the mask are lithographically defined. This results in a highly accurate and reproducible shadow mask which can be removed by lift-off. Growth velocity variations up to 50% have been observed. The application of this technique to the coupling of passive and active waveguide structures is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103973
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    Paper (German National Licenses)
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