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  • American Institute of Physics (AIP)  (7)
  • 1995-1999  (4)
  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1−x)Ti1+yO3+z thin films grown by chemical vapor deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4565-4575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dielectric response of a series of {100} fiber-textured (BaxSr1−x)Ti1+yO3+z samples deposited by liquid-source metalorganic chemical vapor deposition onto Pt/SiO2/Si, as a function of the two most commonly varied microstructural parameters: film thickness and Ti nonstoichiometry y. We find that the overall behavior of these samples is adequately described by mean-field, Landau–Ginzburg–Devonshire theory as for bulk ferroelectrics. However, we quantify the impact of three separable factors for these films that greatly alter the dielectric susceptibility as a function of temperature, compared to that found for bulk ceramic samples at the same Ba/Sr ratio of 70/30: (i) Ti nonstoichiometry; (ii) the apparent interface effect; and (iii) the plane equibiaxial stress state resulting from thermal expansion mismatch strains. When these factors are properly taken into consideration, we show that these fine grained thin films behave in a manner entirely consistent with expectations based on bulk behavior. Implications can therefore be drawn concerning the nature of size effects in this ferroelectric system. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371404
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  • 2
    Electronic Resource
    Electronic Resource
    The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2497-2504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature- and field-dependent permittivities of fiber-textured Ba0.7Sr0.3TiO3 thin films grown by liquid-source metalorganic chemical vapor deposition were investigated as a function of film thickness. These films display a nonlinear dielectric response under conditions representative of those encountered in dynamic random access memories or other integrated capacitor applications. This behavior has the exact form expected for a classical nonlinear, nonhysteretic dielectric, as described in terms of a power series expansion of the free energy in the polarization as in the Landau–Ginzburg–Devonshire approach. Curie–Weiss-like behavior is exhibited above the bulk Curie point (∼300 K), although the ferroelectric phase transition appears frustrated. Small-signal capacitance measurements of films with different thicknesses (24–160 nm) indicate that only the first term in the power series expansion varies significantly with film thickness or temperature. Possible origins for this thickness dependence are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366062
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  • 3
    Electronic Resource
    Electronic Resource
    Thickness dependence of the twin density in YBa2Cu3O7−δ thin films sputtered onto MgO substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2171-2173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lengths and spacings of twins in YBa2Cu3O7−δ thin films deposited onto MgO substrates have been measured by transmission electron microscopy as a function of film thickness t, for t ranging from 50 to 1400 nm. The twin length is linear in t, while the twin spacing follows a t1/2 dependence. This form for the twin spacing is consistent with the prediction of a simple free energy expression for the twinning transformation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104996
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of YBa2Cu3O7−δ on vicinally polished MgO substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2501-2503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBaCu3O7−δ thin films were grown on vicinally polished MgO [001] substrates. The orientation of the films is strongly influenced by the substrate surface normal, with only very weak alignment to the substrate [001] crystallographic direction. Vicinal angles of 1°, 2.5°, and 5° toward [010] produced films with large mosaic spread parallel to the vicinal angle [as high as 4° full width half maximum (FWHM) for the 5° sample] and with critical current densities as high as films grown on on-axis substrates (e.g., 4.4×107 A/cm2). Samples on 10° and 20° vicinal substrates showed a reduction in mosaic spread but still alignment to the surface normal, and weak and strong reductions of the critical current density, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103840
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  • 5
    Electronic Resource
    Electronic Resource
    Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2742-2753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Possible domain patterns are developed for (001) oriented (pseudocubic indexing) epitaxial rhombohedral perovskite ferroelectric (FR) films. We assume that the films are grown above their Curie temperature (TC) in a cubic paraelectric (PC) state. The rhombohedral distortion consists of a "stretch" along one of the four 〈111〉 crystallographic directions of the cubic perovskite unit cell. Domain pattern formation is concurrent with the PC→FR transformation on cooling from the growth temperature. The domain patterns form to minimize elastic energy in the film, at the energetic expense of both forming domain boundaries and developing local stresses in the substrate. Eight possible domains may form, half of which are related by inversion, thus leading to four mechanically distinct variants. The possible domain walls are determined by mechanical and charge compatibility and follow closely from the analysis of Fousek and Janovec [J. Appl. Phys. 40, 135 (1969)]. Domain patterns may develop with either {100} or {101} boundaries. In both cases, the individual domains in the patterns are energetically degenerate and thus equal width lamellar patterns are predicted. When polarization is included in the analysis, the {100} boundary patterns have no normal component of the net polarization, whereas the {101} boundary patterns correspond to the fully poled state. We report on experimental observation of {100} domain patterns in epitaxial PbZr0.80Ti0.20O3 and PbZr0.65Ti0.35O3 films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366632
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  • 6
    Electronic Resource
    Electronic Resource
    Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary electron emission patterning of single crystal diamond surfaces with hydrogen and oxygen plasma treatments was demonstrated. Hydrogen plasma treated regions were much brighter than the oxygen terminated regions. Results of atomic force microscopy confirmed that the observed contrast is not topographical. Several other possible negative electron affinity (or low positive electron affinity) materials such as chemical vapor deposited (CVD) diamond, aluminum nitride, and tetrahedrally bonded amorphous carbon (txa−C1−x) were also investigated. Faint image contrast (patterning) was also observed from polycrystalline CVD diamond and polycrystalline aluminum nitride films; however, no contrast at all was obtained from tetrahedrally bonded amorphous carbon (txa−C1−x) films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121424
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  • 7
    Electronic Resource
    Electronic Resource
    Josephson coupling in a-axis YBa2Cu3O7−δ/Pr1−xYxBa2Cu3O7−δ /YBa2Cu3O7−δ sandwich-type junctions (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3221-3223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied Josephson coupling in a-axis YBa2Cu3O7−δ/Pr1−xYxBa2Cu3O7−δ /YBa2Cu3O7−δ sandwich-type superconductor/normal/superconductor (SNS) junctions. Growth parameters for the films were optimized for smoothness of the barrier interfaces and the films were well characterized by scanning electron microscopy, atomic force microscopy, and cross-sectional transmission electron microscopy. Transport of the barrier material was highly dependent upon the doping: for x=0, the resistivity followed a T−1/4 behavior and was ∼105 Ω cm at 4.2 K; for x=0.45, the resistivity was nearly metallic and was 10−1 Ω cm at 4.2 K. In the small junction regime W〈λj, the critical current scaled with junction area, and was modulated by a magnetic field. We have compared our results to other SNS work and found that the coupling strength of the barrier increases with the conductivity of the barrier material. Possible sources of the coupling are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110204
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