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  • American Institute of Physics (AIP)  (28)
  • 1995-1999  (28)
  • 1
    Electronic Resource
    Electronic Resource
    Influence of domain size on optical properties of ordered GaInP2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2633-2639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using dark-field transmission electron microscopy images of ordered GaInP samples, we show how the ordering domain size depends on the growth temperature. Samples with different average domain sizes are compared with regard to their photoluminescence (PL) and excitation spectra. We find a close correlation between the size of the ordered domains and the relative intensity of the PL peak from band–band recombination compared with the rapidly shifting, below-band-gap luminescence emission. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361099
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  • 2
    Electronic Resource
    Electronic Resource
    Role of electron traps in the excitation and de-excitation mechanism of Yb3+ in InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1523-1530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study concerning the excitation mechanism of the Yb impurity in n- and p-type InP crystals was performed by the method of optically detected microwave-induced impact ionization. Based on the results it is argued that the Yb3+ core excitation is intermediated by a nonradiative recombination of a bound exciton. A fingerprint of the existence of such an excitonic state is given. Also, the nonradiative decay channel is discussed and shown to involve an Auger process with the energy transfer to a locally bound electron. Experimental evidence is presented that by the impact ionization of the bound electron the nonradiative recombination channel may be removed, leading to an increase of the characteristic Yb3+ luminescence. An unprecedented microwave-induced 5% increase of the Yb3+ intrashell emission has been recorded. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358903
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  • 3
    Electronic Resource
    Electronic Resource
    Investigations on the performance of multiquantum barriers in short wavelength (630 nm) AlGaInP laser diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2158-2160 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.5In0.5P/Ga0.5In0.5P superlattice structures have been investigated as multiquantum barriers (MQB) in 630 nm band laser diodes in order to reduce thermal current losses. By inserting an optimized MQB, we have succeeded in improving both threshold currents and characteristic temperatures of such devices. However, the optimized dimensions of the MQB found experimentally deviated strongly from those predicted theoretically, indicating that the commonly used theoretical description assuming effective mass approximation, electron wave interference, and using transfer matrix calculation is not adequate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123786
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  • 4
    Electronic Resource
    Electronic Resource
    Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 82-84 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied optical transitions in GaInN/GaN single and multiple quantum wells using time-resolved photoluminescence spectroscopy. Our results show that the energy positions of the dominant emission lines strongly depend both on the well width and on the number of wells. In the case of multiple quantum wells, time-resolved measurements clearly distinguish multiple emission lines. These observations are consistently explained by considering the large built-in piezoelectric field in strained GaInN quantum wells. The multiple emission lines are attributed to intra- and interwell transitions between nearest and next-nearest neighbors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122958
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  • 5
    Electronic Resource
    Electronic Resource
    Intrinsic modulation bandwidth of strained GaInP/AlGaInP quantum well lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 650-652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the intrinsic modulation response of GaxIn1-xP/AlGaInP quantum well lasers. The differential gain resulting from the measurement of the frequency response, is in good agreement with calculations based on a 6-band kp-theory and direct measurements of the optical gain. We find a maximum value of 3.8×10−16 cm2 for a strongly compressively strained sample, which is less than in InGaAs lasers according to the larger effective masses. The maximum bandwidth we observed is 9.3 GHz at −3 dB. We show that the bandwidth is limited by catastrophic optical damage and not by intrinsic mechanisms. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119818
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  • 6
    Electronic Resource
    Electronic Resource
    A mechanism for low-power all-optical switching in multiple-quantum-well structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4212-4214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a novel type of optical switching mechanism in pin separate confinement multiple quantum well (SCMQW) structures. By introducing additional large barriers into conventional InGaAs(P)/InP SCMQW structures, the transport of photogenerated holes can be controlled in such a way that they accumulate in the intrinsic region. This positive space charge leads to a local screening of the internal field in the optical confinement layer and to an enhancement of the internal field in the MQW region. We characterize the optical nonlinearity, which is based on the quantum confined Stark effect (QCSE), experimentally and theoretically. As the nonlinearity is observed at input powers 〈1 W/cm2 in the basic nonoptimized structures presented here, we propose to use our structure especially for low-power optical switches. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116989
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  • 7
    Electronic Resource
    Electronic Resource
    Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2525-2527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyzed the intrinsic defects and the n-type-carrier concentration generated by nitrogen ion implantation in n-type GaN by deep-level-transient spectroscopy and by capacitance–voltage measurements, respectively. The samples were grown on sapphire by metalorganic vapor-phase epitaxy. Nitrogen implantation with different ion doses and postimplantation rapid-thermal annealing (RTA) were investigated. We observed a growing n-type-carrier concentration and increasing defect concentration with increasing nitrogen ion implantation doses. After RTA the concentration of free carriers and deep levels as found in the as-grown state are restored. We also address contrarily seeming results from measurements of sheet resistance after N implantation published recently. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117727
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  • 8
    Electronic Resource
    Electronic Resource
    Evaluation of the effective hole masses in pseudomorphic compressively strained GaxIn1−xAs/InP quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1−xAs/InP single quantum well structures is experimentally verified by the determination of the effective in-plane hole masses. The masses are obtained by performing magnetotransport experiments. Mobilities up to 8700 cm2/V s for gallium content of x=0.3 were reached. The effective heavy hole masses of compressively strained GaInAs are drastically reduced compared to bulk material in excellent agreement to calculations using the k⋅p-perturbation theory, whereas the masses of the uppermost valence band of tensile strained material appear to be rather high. Consequently, no experimental determination was possible in the latter case. A precise analysis of the Shubnikov–de Haas oscillation patterns of compressively strained quantum wells shows a spin splitting of the uppermost heavy hole band, containing two different effective masses. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115509
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  • 9
    Electronic Resource
    Electronic Resource
    Valence-band splitting and band-gap reduction in ordered GaInAs/InP (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6196-6198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the linear absorption and the nonlinear absorption due to the bleaching of the excitonic resonance have been used to determine the band-gap reduction and valence-band splitting in spontaneously ordered GaInAs/InP. Tilts of the substrate ranging from 2° to 15° towards {111}B, different growth rates and temperatures have been used to produce a series of samples containing various degrees of ordering. Best sample quality including small x-ray and photoluminescence linewidth as well as low temperature luminescence from the band edge was obtained using a substrate tilted 6° towards {111}B. The ratio between ordering induced band-gap reduction and crystal-field splitting was found to be ζ=1.8±0.4. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367493
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  • 10
    Electronic Resource
    Electronic Resource
    Self-assembled InAs/GaAs quantum dots under resonant excitation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1631-1636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy structure and the carrier relaxation in self-assembled InAs/GaAs quantum dots (SADs) is investigated by photoluminescence excitation spectroscopy (PLE) and photoluminescence (PL) at resonant excitation (below the GaAs and the wetting layer bandgap). In PLE measurements we find a clear resonance from the first excited hole state as well as resonances from a relaxation via different phonons. From a comparison of the PL-rise times in time resolved spectroscopy, we conclude on a fast electron relaxation (≤50 ps) and a slow hole relaxation with a time constant of about 400 ps. Different relaxation paths are observed in the InAs/GaAs quantum dot system and allow us to identify the hole relaxation in the SADs as multiphonon assisted tunneling. The PL-decay time in the SADs after resonant excitation (about 600 ps) is attributed to the lifetime of the quantum dot exciton. In agreement with theoretical predictions, we find a constant lifetime of about 600 ps for temperatures below 50 K and a linear increase of the lifetime between 50 and 100 K with a slope of 26 ps/K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366876
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