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  • American Institute of Physics (AIP)  (2)
  • 1995-1999  (2)
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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Tetrahedral amorphous carbon films prepared by magnetron sputtering and dc ion plating (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1416-1422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly tetrahedral, dense amorphous carbon (ta-C) films have been deposited using rf sputtering of graphite by an unbalanced magnetron with intense dc Ar-ion plating at low temperatures (〈70 °C). The ratio of the argon ion flux to neutral carbon flux Φi/Φn is about 5. The film density and compressive stress are found to pass through a maximum of 2.7 g/cm3 and 16 GPa, respectively, at an ion plating energy of about 100 eV. Experiments with higher ion flux ratios of Φi/Φn=10 show that it is possible to deposit carbon films with densities up to 3.1 g/cm3 and sp3 contents up to 87%. Deposition of ta-C in this experiment when the energetic species is Ar appears to require a minimum stress of 14 GPa to create significant sp3 bonding, which contrasts with the continuous increase in sp3 content with stress when the energetic species is C ions themselves. These results are used to discuss possible deposition mechanisms. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360979
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  • 2
    Electronic Resource
    Electronic Resource
    Stress-induced formation of high-density amorphous carbon thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6024-6030 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon films with high sp3 content were deposited by magnetron sputtering and intense argon ion plating. Above a compressive stress of 13 GPa a strong increase of the density of the carbon films is observed. We explain the increase of density by a stress-induced phase transition of sp2 configured carbon to sp3 configured carbon. Preferential sputtering of the sp2 component in the carbon films plays a minor role compared to the sp2⇒sp3 transition at high compressive stress formed during the deposition process. Transmission electron microscopy shows evidence of graphitic regions in the magnetron sputtered/Ar plated amorphous carbon thin films. Differences in the microstructure of the tetrahedral amorphous carbon (ta–C) films deposited by filtered arc and mass selected ion beam; and those films deposited using magnetron sputtering combined with intense ion plating can be used to explain the different electronic and optical properties of both kinds of ta–C films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366469
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