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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6947-6950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence and evolution of traps in undoped semi-insulating (SI) InP obtained by high temperature annealing (900 °C for 90 h) in poor or rich phosphorus atmosphere has been studied by means of photoinduced current transient spectroscopy. Six traps named A1 to A6 having activation energies ranging from 0.2 to 0.6 eV have been detected in three samples submitted to the same annealing process. The samples differ in the Fe concentration of the starting material and the applied phosphorus pressure in the annealing process. A comparison of the corresponding photoinduced current transient spectroscopy spectra shows that among the observed traps, the 0.2 eV one can be related to a phosphorus deficiency, and the 0.3 eV and 0.4 eV traps could be due to an excess of phosphorus during annealing. Moreover, the trap corresponding to iron (0.6 eV) has been observed in all the studied samples. © 1996 American Institute of Physics.
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  • 2
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The early state of spinodal decomposition was studied by small angle neutron scattering in the critical mixture of the isotopic blend deutero-polystyrene/polystyrene (d-PS/PS) of equal molecular volume of 1.42×106 cm3/mol in a temperature range 12 K≤||Tc−T||≤82 K. This process can be described by the relaxation between two static structure factors, S(Q) representing the equilibrium values of the system in the mixed state and at the temperature where phase separation occurs. The time evolution of the relaxation process is described by the dynamical structure factor, L(Q,t) which depends on the dynamic properties of the mixture. It will be shown that the static structure factor of a mixed system can also be determined in the unstable two-phase region during the early state of spinodal decomposition. Consistent values for the Flory–Huggins parameter were found in comparison with a lower molecular d-PS/PS sample and, therefore, a lower critical temperature which was even smaller than the phase separation temperatures of the present system.The observed time evolution of the fluctuation modes is nonexponential. Therefore, it was originally supposed that internal modes of the coil come into play. The analysis of the data with an ansatz by Akcasu, which takes internal modes into account showed, however, that the phase separation in the experimental range of wave number and time is dominated by the centre of mass diffusion as in the C–H–C case and the nonexponential behavior was attributed to a time dependent increase of the "range'' of the Onsager coefficient. A range of the Onsager coefficient larger than the radius of gyration of a single coil is predicted in case of entangled polymers. However, no time dependence was predicted so far. The evaluated diffusion constants follow an Arrhenius behavior and are consistent with earlier studies. They show a D0∝N−2 scaling consistent with reptation. A further result is the observation of a second order peak in the structure factor already in the early times of spinodal decomposition. So far, this was only attributed to the late state of spinodal decomposition. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3447-3449 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The applicability of superconducting films in high-performance microwave devices suffers from inhomogeneous growth and local defects. Therefore we have installed a laser scanning system to visualize with spatial resolution the distribution of the microwave fields in 2-in.-diam YBaCuO disk resonators. The TM310 mode was imaged at a loaded quality factor of 8.3×104 via changes of the resonant frequency at 2.21 GHz and 40 K. The field distribution agreed with a magnetic-wall model, indicating at the contour of the disk fringe fields, but without strong edge enhancement. The data also indicated an inhomogeneous effective microwave penetration depth. The spatial resolution is presently limited to about 2 mm by heat diffusion. © 1998 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5021-5023 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric Nb3Sn films on sapphire were prepared with a tin vapor diffusion process from sputtered Nb precursors. The superconductive properties of the precursor and the converted films were measured at 1 kHz and 87 GHz. The nanocrystalline Nb films yielded Tc=7.8–9.3 K, ΔTc=0.05–0.30 K, Jc (4.2 K)=0.8–2.8 MA/cm2, and ρ(Tc)=1–35 μΩ cm, indicating a high sensitivity to granularity and impurities. In contrast, the 0.5–3.0 μm thick and large-grained Nb3Sn films showed reproducibly Tc=18.0 K, ΔTc=0.1 K, Jc (4.2 K)=5–6.5 MA/cm2, and ρ(Tc)=7.7–9.1 μΩ cm. A reduced energy gap Δ/kTc=1.8–2.2 and a penetration depth λ0 (T=0 K)=65–80 nm were deduced from the surface impedance measurements. The residual surface resistance dropped below the sensitivity limit of 0.3 mΩ. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3650-3652 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8O3 as a ferroelectric insulator, and SrRuO3 as a gate electrode, each layer prepared by pulsed laser deposition. The hysteresis behavior of the channel conductance is studied. Using gate voltage pulses of 100 μs duration and a pulse height of ±3 V, a change of a factor of two in the remnant conductance is achieved. The dependence of the conductance on the polarity of the gate pulse proves that the memory effect is driven by the ferroelectric polarization. The influence of charge trapping is also observed and discussed. © 1996 American Institute of Physics.
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