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The diffusion process of metastable carriers in bismuth (1995)

de Sande, J. C. G. ; Sánchez Balmaseda, M. ; Guerra Pérez, J. M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 6358-6360

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The diffusion process of electrons and holes which have been pumped into a metastable band in bismuth films by a 1.064-μm laser pulse is considered in the calculation of the induced thermal gradient. The fit between the temporal evolution of this calculated thermal gradient and that of the thermoelectric response of films to the laser excitation allows us to estimate an upper limit of the ambipolar diffusion coefficient of metastable carriers. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359107

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