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  • American Institute of Physics (AIP)  (1)
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    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 479-481 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the thermally induced redistribution of Rh in low pressure MOCVD grown InP structures by means of secondary-ion-mass-spectroscopy. Analogous measurements for InP:Fe structures serve as reference. On alternately Rh-doped/undoped InP structures an upper limit for the diffusion coefficient of DRh(800 °C)≤1×10−14 cm2/s is established much smaller than DFe(750 °C)=1×10−11 cm2/s. No exchange reactions are observed at the interface of p-InP/InP:Rh structures. Only Rh implanted into InP shows defect induced redistribution into amorphous areas. Rh is superior to Fe as far as thermal stability is concerned. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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