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  • 1
    Electronic Resource
    Electronic Resource
    Adhesion between Te-based alloy films and fluorocarbon sublayers during the ablative hole opening process (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 865-872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359011
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  • 2
    Electronic Resource
    Electronic Resource
    Soft magnetic properties of nanocrystalline FeRuGaSi-Hf alloy films and head characteristics for the embedded thin film tape head : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5907-5909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hf-added FeRuGaSi alloy film has an amorphous structure in the as-deposited state and becomes nanocrystalline after annealing. Due to this structure change from crystalline to amorphous by the addition of Hf, soft magnetic degradation of the film deposited on the slant grooved substrate, which is necessary for the sophisticated embedded thin film (ETF) head structure, is greatly suppressed and the undesirable film stress is relieved. The FeRuGaSi-Hf alloy film has higher resistivity and permeability at high frequencies than those of sendust film, and the read/write characteristics of this alloy film show better performance than sendust film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362168
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of deviatoric stress and radial strain on the shock-induced diffusionless transformation in boron nitride (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 527-529 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transformation of graphitelike BN (h-BN) to wurtzite-type high-pressure BN (w-BN) was investigated through shock-recovery techniques under quasihydrodynamic and nonhydrodynamic shock compressions and under various strain conditions. The experimental results support a diffusionless mechanism, by which the hydrodynamic c-axis compression of h-BN is preferred. This mechanism is topologically considered based on the relationship of crystal structures between h-BN and w-BN. The presence of deviatoric stress and strain depresses the yield of w-BN and the development of w-BN (100) relative to (002). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364132
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  • 4
    Electronic Resource
    Electronic Resource
    Surface-acoustic-wave properties of MgO-doped LiNbO3 single crystals measured by line-focus-beam acoustic microscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7863-7868 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Basic acoustic properties of five MgO-doped LiNbO3 rectangular parallelpiped specimens, having X-, Y-, and Z-cut planes, with different MgO dopant concentrations ranging from 0 to 13 mol % are investigated by line-focus-beam acoustic microscopy. The investigation is conducted to characterize the optical-use MgO:LiNbO3 crystals and wafers and to establish large-diameter crystal growth conditions. Leaky-surface-acoustic-wave (LSAW) velocities are measured on each crystalline plane of each specimen as a function of the wave propagation direction and are compared with the measured chemical composition ratios of Mg/Li/Nb, densities, and lattice constants. It is shown that, as the dopant concentrations increase in the experimental composition region, the LSAW velocities increase almost linearly for all the surfaces and all the propagation directions. The LSAW velocities are linearly proportional to the lattice constants, but inversely proportional to the densities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370597
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  • 5
    Electronic Resource
    Electronic Resource
    Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/Si(001) structures using medium-energy ion scattering spectroscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 673-675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study the depth profile and lattice location of Sb atoms in Si/Sb(δ-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the δ-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the location of the original Sb δ layer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122983
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  • 6
    Electronic Resource
    Electronic Resource
    Fine iron particles formed in a sapphire crystal by the ion implantation technique (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4631-4641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of iron atoms implanted into a sapphire crystal at a dose from 4×1016 to 1×1017 Fe/cm2 were investigated using conversion electron Mössbauer spectroscopy at low temperature. It was confirmed that the components in the Mössbauer spectra which have been assigned to the Fe4+ state so far by other researchers are caused by fine particles of metallic iron, and about 75% of the implanted iron atoms stabilize in the form of fine particles of α iron at high implantation dose. Growth of the fine particles was simulated with a computer, and the expected Mössbauer spectra were calculated considering the influence of the nearest neighbors and next-nearest neighbors on the magnetic hyperfine field of the iron atoms. The simulated spectra agrees well with the experimentally observed spectra on the whole. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367248
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  • 7
    Electronic Resource
    Electronic Resource
    Radiation temperatures of soda-lime glass in its shock-compressed liquid state (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1711-1716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A radiation pyrometer in conjunction with a two-stage light gas gun has been used to measure shock temperatures of soda-lime glass in the pressure range 54–109 GPa. This pyrometer consists of two parts, i.e., an optical multichannel analyzer which measures the radiation spectrum over the visible range (∼450 nm window) and a four-channel photomultiplier tube system which records the time-varying behavior of shock temperatures. The measured radiation spectra are compared with the Planck function to estimate the shock temperatures and emissivities. Obtained spectra are well fit by the Planck function with moderate emissivities, indicating that relatively homogeneous thermal radiation is the main component of radiation. Obtained shock temperatures range from 2800 (100) to 5700 (300) K and they seem to represent shock temperatures of liquefied soda-lime glass (melt). The Hugoniot is well described by a linear relation, us=0.14(21)+1.92(5)up km/s. It is deduced that the radiation from liquids under shock compression, in contrast to the radiation from solids under shock compression, is more thermal and fits the Planck function well, even at lower temperatures. This is because the radiation spectrum of solids under compression often shows nonthermal radiation due to heterogeneous deformation, while the radiation spectrum of liquids under compression could not have such a nonthermal component. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366889
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  • 8
    Electronic Resource
    Electronic Resource
    Demonstration of the independence of absorptive all-optical bistabilities in reflection and luminescence (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1590-1592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence on the source location of photothermal bistabilities of a thin CdS:Cu film is demonstrated by the investigation of bistability in luminescence in reflection geometry. Particularly, it is shown that the infrared portion in the reflected beam clearly exhibits contrasting bistable loops in contrast to the reflection itself. The unexpected effect is explained by the fact that bistability in luminescence is a bulk feature which is not affected by the surface region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113861
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  • 9
    Electronic Resource
    Electronic Resource
    Electric field dependent intersubband optical transitions in a ZnCdSe–ZnSe superlattice (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2074-2076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization dependence of the excitonic transition in ZnSe-Zn0.8Cd0.2Se superlattices was studied by low-field electroreflection spectroscopy. A new peak observed in the lower energy side of the n=2 heavy-hole exciton E2hh at room temperature is attributed to the forbidden transition in zero field from the n=2 heavy-hole state to the n=1 electron state. This reflection change is found to be polarization dependent. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116884
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature dependence of reflectance and transmittance at 514.5 nm of CdS films formed by laser ablation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2985-2986 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of reflectance and transmittance of a thin (2 μm) CdS film prepared by laser ablation was investigated. The measurements were performed with the 514.5 nm line of an argon laser in the range 180–350 K. It occurred that due to locally enhanced absorption at the film/substrate interface, the transmitted light was considerably weaker than would be theoretically expected for a homogeneous layer. The reflectance, however, followed the theory based on Urbach's rule. The interfacial enhancement of the absorption was confirmed by luminescence investigations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116671
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