ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
We describe a combined ultrahigh vacuum scanning tunneling microscope (STM)–scanning electron microscope (SEM) system, which allows to position the STM tip with respect to the sample within an area of 5 mm×5 mm under SEM control. While the SEM resolution is sufficient to clearly resolve sub-μm structures on the samples, the STM features atomic resolution on semiconductor surfaces. The combination of SEM and STM allows high-resolution studies on inhomogeneous samples in materials research as well as the use for micro- and nanoelectronic device characterization or device modification. The STM performance was checked by atomically resolved imaging of Si(111) (7×7) surfaces. The STM/SEM combination and its application in device characterization is demonstrated by the investigation of vertically grown resonant tunneling diodes on an AlAs/GaAs basis. Due to its performance the system has a high potential for high-resolution imaging in materials research, for novel device characterization and nanoscale structuring or modification of very small devices. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1147045
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