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  • American Institute of Physics (AIP)  (38)
  • 2000-2004  (12)
  • 1995-1999  (26)
  • 1980-1984
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 639-645 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Correlation of evolution of end-of-range (EOR) damage and transient enhanced diffusion (TED) of indium has been studied by secondary ion mass spectrometry and transmission electron microscopy. A physically based model of diffusion and defect growth is applied to the indium diffusion system. Indium implantation with 200 keV, 1×1014/cm2 through a 10 nm screen oxide into 〈100〉 p-type Czochralski silicon wafer was performed. During postimplantation anneal at 750 °C for times ranging from 2 to 120 min, formation of dislocation loops and indium segregation into loops were observed. Simulation results of evolution of EOR defects show that there is a period that {311} defects dissolve and release free interstitials before the Ostwald ripening step of EOR dislocation loops. Our diffusion model that contains the interaction between indium and loops shows the indium pileup to the loops. Indium segregation to loops occurs at a pure growth step of loops and continues during the Ostwald ripening step. Although dislocation loops and indium segregation in the near-surface region are easily dissolved by high temperature annealing, EOR dislocation loops in the bulk region are rigid and well grown. It is considered that indium trapped by loops with a large radius is energetically stable. It is shown that modeling of the evolution of EOR defects is important for understanding indium TED. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 513-515 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigate the effects of structural fluctuations on three-dimensional photonic crystals with stacked-stripe (woodpile) structures at near-infrared wavelengths. Two photonic crystals are prepared: one with a perfect structure and the other with significant structural irregularities artificially introduced. Through an experimental comparison of the optical properties and photonic band gap structures of these two photonic crystals, it is shown that the structure treated here is very robust to structural fluctuations. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1989-1990 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In order to fabricate intrinsic pn junctions in p-type ZnTe substrates for realizing pure-green light-emitting diodes, Al was used as the diffusion species. We found that the Al diffusion region is observed as a dark region image by scanning electron microscopy. Al was diffused over a wide range of annealing temperatures and times. It was found that the activation energies of Al diffusion into p-type ZnTe substrates were 1.9±0.1 eV and the diffusion coefficient was given by D=20 exp(−1.9/kT) cm2/s. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3688-3693 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structures and crystal transformation of the newly synthesized vinylidene fluoride (VDF) oligomer with large electric dipoles evaporated on KCl (001) at various substrate temperatures have been investigated by an energy dispersive–grazing incidence x-ray diffraction system, Fourier transform infrared spectroscopy, and atomic force microscope (AFM). It was revealed that the molecules grow epitaxially and are influenced greatly by forces of the crystal surface field in terms of van der Waals or electrostatic potentials, and found that the phase transformation from form II (α phase) to form I (β phase) is induced by raising the temperature of the substrate from 50 to 80 °C, accompanying the alternation in the crystal axes on the substrate from the a axis of form II to the polar b axis of the form I crystal. This fact suggests that the molecular chain of VDF oligomers aligns their c axes along the 〈110〉 row of K+ or Cl− with the aid of electrostatic interaction under enough thermal movement. Moreover, in the transformation process, a pair of "rod-like" crystals, suggesting ferroelectric activity, were observed by AFM. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4980-4984 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transient enhanced diffusion of indium implanted in silicon is studied in the presence of the end-of-range (EOR) damage layer. To investigate the effect of EOR defects on the indium diffusion, the samples that were implanted with indium at a high dose (1×1013–5×1014/cm2) sufficient to produce the amorphous layer were prepared. Transmission electron microscopy measurements and Rutherford backscattering spectrometry reveal the amorphization threshold of indium implantation is around 5×1013/cm2 for 200 keV, 115In+ implanted with 100 μA/cm2 beam current density at room temperature. These results are consistent with Monte Carlo simulation of implantation. Monte Carlo simulations indicate the deviation from the plus one model due to the mass effect of indium. After amorphization, following both RTA at 1000 °C and furnace anneal at low temperature (650 and 850 °C) in nitrogen ambient showed the formation of extrinsic EOR dislocation loops below the original amorphous/crystalline interface. During this process, strong segregation of indium toward the EOR dislocation loops is clearly observed. The profile shift of indium at a concentration of 1×1017 atoms/cm3 is not proportional to the implanted dose. Since most interstitials condense into EOR dislocation loops, diffusivity enhancement of indium is not proportional to the implant dose above amorphization threshold. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6343-6345 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Co–Cr–Ta/Cr bilayered films for longitudinal recording disks were deposited by facing targets sputtering (FTS) on 2.5 in. and ultraflat disk substrates of durable single-crystal silicon at temperature Ts of 100 °C and Ar pressure PAr of 0.2 mTorr. TEM observation of the films revealed ultrafine microstructures, and grain boundaries were unclear. The noise and recording characteristics of those disks were comparable with those of very high-performance disks with Co–Cr–Pt films, with coercivity Hc of 2.4 kOe, employed as a reference, even though the Co–Cr–Ta films exhibited macroscopic Hc of only 800 Oe. In this study, Co85Cr13Ta2/Cr bilayered films with the same composition as the above-mentioned disks were deposited by plasma-enhanced (PEFTS) on 2.5 in. and glass–ceramic substrates with ultraflat surface and tough durability at Ts of 100 °C to obtain better microstructure, signal-to-noise ratio (SNR), and surface flatness, with consequent lower flying height, than those on Si substrates, thus making it possible to fabricate ultrahigh-density recording disks. The PEFTS apparatus has several outstanding advantages such as plasma-free substrates, low background pressure of 5×10−7 Torr, low PAr of 0.1 mTorr, and higher mobility of the adatoms than in conventional FTS because of the proximity of the substrate to the central axis of the targets, indicating uniform plasma distribution, with up to six target units in a vacuum chamber. The film's surface roughness Ra of 0.7 nm and the high mobility of the adatoms result in narrow grain boundaries without pores and inclusions, which were observed by TEM, and better overwrite performance than that of Si substrates and the same SNR as Si substrates, which were measured with a read/write test stand. These results will allow practical application in ultrahigh-density recording systems, including 1 in. microdrives. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3085-3091 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We have developed a longitudinal emittance monitor for a 7 MeV proton beam provided by the 433 MHz linac at the Institute for Chemical Research, Kyoto University. In the present system, the beam first hits a thin gold target on the beam line, and a fraction of the scattered protons comes into a small cavity. After deflected by a rf electric field in the cavity, the protons finally reach a position sensitive detector (PSD). The PSD gives the information of the energy and position of the individual scattered proton, which enables us to reconstruct the longitudinal distribution of the beam before colliding with the target. The phase and energy resolution of the system are estimated to be 13° and 23 keV full width at half-maximum, respectively. The longitudinal rms emittance measured was 0.39±0.07 π deg MeV under the nominal operating condition of the linac. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The 32-channel SQUID system described here is used for diagnosing heart disease by measuring the x and y components of the cardiac magnetic field. To detect a magnetic field parallel to the body surface, it uses a compact hybrid superconducting quantum interference device (SQUID) gradiometer consisting of a planar pickup coil (fabricated using thin-film techniques) and a square double-washer dc-SQUID having large voltage-flux transfer function. The SQUIDs are operated in a flux-locked mode using simple readout circuits connected directly to the preamplifier without additional positive feedback. The system is installed in a magnetically shielded room in a hospital. A low noise characteristics lower than 10 ft/(square root of) Hz in a white noise is obtained in the hospital. Examples of tangential magnetocardiogram (MCG) measurements presented here show that the MCG obtained using this gradiometer makes it easy to visually estimate the electrophysiological behavior of the heart. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1517-1519 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A multiple hollow-cathode vacuum-ultraviolet source excited by a pulsed glow discharge in a mixture of Xe and He has been developed. A MgF2 window with a diameter of 55 mm was used, and the repetition frequency was varied between 3 and 9 kHz. Stable output was maintained for about 3 h. Measurements of 147 nm radiant illumination were made at various distances from the window at various repetition frequencies. The peak radiant illumination decreased while the average radiant illumination increased with increasing repetition frequency. The output power density near the center of the window could be estimated from the relationship between measured radiant illumination and distance from the window. The peak and average output power densities at 6 kHz were 30 and 1.5 W/m2, respectively. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4693-4700 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thermal quenching properties of disordered superlattices (d-SLs) are experimentally investigated. Three types of d-SLs with (1) various band-gap differences, (2) various unit lengths of disorder, and (3) various appearance probabilities of disordered layers are used for experiments. Thermal quenching properties of photoluminescence intensities are investigated for the estimation of strength of disorder. Consistent results are obtained in that the thermal quenching becomes small with increasing disorder for each type of d-SL. Abrupt changes in the thermal quenching characteristics are observed at the type-I/type-II transitions of AlyGa1−yAs/GaAs d-SLs and o-SLs. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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