Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 480-485
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A reflectance anisotropy spectroscopy (RAS) and low-energy electron diffraction study of the InP(001) surface is presented. The surface was prepared by thermal desorption of an As-P capped epilayer grown by molecular beam epitaxy. RA spectra have been monitored over a spectral range of 1.5–5.5 eV at regular intervals during thermal decapping and annealing up to the point of decomposition (553–973 K). Each of the RA spectra of the surface reconstructions comprise positive (at 2.9 eV) and negative (at 1.8 eV) anisotropies which have been previously associated with P- and In-related bonding, respectively. Unlike other III-V (001) semiconductor surfaces, the evolution of different reconstructions cannot be explained in terms of a change in surface stoichiometry which involves loss of the anion species. In the case of InP(001) the P species contributes to the clean surface reconstruction from the early stages of decapping to the point of decomposition. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366718
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