ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Sorting

Electronic Resource

Improvement of SiO2/Si interface by low-temperature annealing in wet atmosphere (1995)

Sano, N. ; Sekiya, M. ; Hara, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 2107-2109

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A postannealing technique was developed in order to improve the quality of SiO2 films formed by a parallel-plate remote plasma chemical vapor deposition. The wave number of the antisymmetric stretching mode of Si–O–Si bonding in the SiO2 film increased from 1058 to 1069 cm−1 by an annealing in H2O vapor at 270 °C. It was estimated that averaged bonding angle of Si–O–Si was widened from 137.8° to 141.0°. The annealing in the H2O vapor ambient at 270 °C for 30 min efficiently reduced the interface trap density to 2.0×1010 cm−2 eV−1 and the effective oxide charges density from 7×1011 to 5×109 cm−2 for a metal-oxide-semiconductor (MOS) diode using the SiO2 film. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113918

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit