ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 4780-4783 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The "Sagdeev potential" is derived from the magnetohydrodynamic equations in a cylindrical coordinate system, and nonlinear electrostatic density waves propagating along the magnetic field in a low-β plasma with cylindrical symmetry are studied. The results show the existence not only of periodic density waves, solitons with a density hump and solitons with a density dip, but also of density shock waves. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1679-1683 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions between platinum and silicon, both during platinum deposition at elevated temperature and during a thermal annealing process, have been investigated using x-ray diffraction, cross-sectional transmission electron microscopy, and x-ray photoelectron spectroscopy. It has been found that sputtering deposition of platinum on a silicon substrate at 200 °C results in the formation of PtSi at the Pt–Si interface. But the reaction cannot fully proceed at this temperature for a platinum film with a thickness of 35 nm. Further annealing at 450 °C causes the platinum film to transform to PtSi completely. A substrate bias of −90 V during sputtering deposition leads to the formation of platinum films with larger columnar grains, instead of finer grains as being formed without substrate bias. In such a case, oxygen diffusion toward the interface was enhanced through the boundaries of these columnar grains, and this results in an accumulation of oxygen and oxide formation at the interface. As a result, the reaction between platinum and silicon was inhibited during the further annealing process for the Pt/Si films deposited with substrate bias. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8122-8131 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond-like carbon (DLC) films have been deposited by a magnetically enhanced plasma (MEP) chemical vapor deposition (CVD) system. The properties and structures of DLC films deposited by MEP-CVD using various gases (methane, He/methane, Ne/methane, and Ar/methane) were studied. The mechanical properties in terms of hardness, Young's modulus and stress, and optical properties in terms of optical band gap and refractive index were enhanced by adding inert gas in methane plasma. The magnitude of the effects on the properties for various inert gases was found as Ne, Ar, and He, on the surface roughness was found as Ar, Ne, and He. The Raman characteristic shows a dependence of the bias voltage and inert-gas/methane ratio, as well as the inert gases dilution. The Raman spectroscopy analysis indicates that the changes of properties of the DLC films are due to the structural changes, such as sp2 and sp3 content in the films prepared under various deposition conditions. The films deposited in Ne/methane show the lowest disordered (D) peak to graphitic (G) peak intensity ratio, the D and G peak positions; highest stress, hardness, Young's modulus, optical band gap, and lowest reflective index. The films deposited in Ar/methane show the lowest surface roughness. This was proposed due to the optimum balance in the inert gas ionization potential and atomic mass. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2293-2295 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in a series (0001)-oriented GaN epitaxial film. Photoluminescence (PL) and carrier mobility of the films are measured at room temperature. The intensities of both the band edge (3.42 eV) peak and yellow luminescence (YL) are strongly related to the threading dislocation density of the GaN films. But different types of dislocations show different relationship with the intensities of PL and YL. The fundamental correlation is found not only between the interaction of edge- and screw-type dislocations and the carrier mobility but also between the interaction and the intensities of both the band edge peak and the YL. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...