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  • 1
    Electronic Resource
    Electronic Resource
    Magnetization dynamics in NiFe thin films induced by short in-plane magnetic field pulses (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7648-7650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization dynamics in a thin NiFe film was investigated by applying short in-plane magnetic field pulses while probing the response using a time-resolved magneto-optical Kerr effect setup. In-plane magnetic field pulses, with duration shorter than the relaxation of the system, were generated using a photoconductive switch and by subsequent propagation of current pulses along a waveguide. The field pulses with typical rise and decay times of 10–60 and 500–700 ps, respectively, have a maximum field strength of 9 Oe, by which Permalloy elements of 16 nm thickness and lateral dimensions of 10×20 μm were excited. The observed coherent precession of a ferromagnetic NiFe system had precession frequencies of several GHz and relaxation times on a nanosecond time scale. The dynamic properties observed agree well the Gilberts's precession equation and the static magnetic properties of the elements © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359462
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  • 2
    Electronic Resource
    Electronic Resource
    Passivation of an anodic oxide/p-Si interface stimulated by electron injection (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4636-4642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positive oxide charge (Qox) and the concentration of nonradiative recombination defects (Nit) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during electron injection. Qox and Nit decreased strongly due to electron injection. The observed effect is suggested to be inverse to the negative-bias-temperature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356431
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  • 3
    Electronic Resource
    Electronic Resource
    Photoinitiated H2CO unimolecular decomposition: Accessing H+HCO products via S0 and T1 pathways (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 2752-2761 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photoinitiated unimolecular decomposition of formaldehyde via the H+HCO radical channel has been examined at energies where the S0 and T1 pathways both participate. The barrierless S0 pathway has a loose transition state (which tightens somewhat with increasing energy), while the T1 pathway involves a barrier and therefore a tight transition state. The product state distributions which derive from the S0 and T1 pathways differ qualitatively, thereby providing a means of discerning the respective S0 and T1 contributions. Energies in excess of the H+HCO threshold have been examined throughout the range 1103≤E†≤2654 cm−1 by using two complementary experimental techniques; ion imaging and high-n Rydberg time-of-flight spectroscopy. It was found that S0 dominates at the low end of the energy range. Here, T1 participation is sporadic, presumably due to poor coupling between zeroth-order S1 levels and T1 reactive resonances. These T1 resonances have small decay widths because they lie below the T1 barrier. Alternatively, at the high end of the energy range, the T1 pathway dominates, though a modest S0 contribution is always present. The transition from S0 dominance to T1 dominance occurs over a broad energy range. The most reliable value for the T1 barrier (1920±210 cm−1) is given by the recent ab initio calculations of Yamaguchi et al. It lies near the center of the region where the transition from S0 dominance to T1 dominance takes place. Thus, the present results are consistent with the best theoretical calculations as well as the earlier study of Chuang et al., which bracketed the T1 barrier energy between 1020 and 2100 cm−1 above the H+HCO threshold. The main contribution of the present work is an experimental demonstration of the transition from S0 to T1 dominance, highlighting the sporadic nature of this competition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480849
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2528-2532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, distinct and reproducible changes of their resistance and capacitance values were found. According to the temperature regime, we observed different behaviors with regard to the resistance changes, namely the tendency to decrease the resistance by annealing at T=200 °C, but to increase the resistance by annealing at T=400 °C. We attribute this behavior to changes in the aluminum oxide barriers of the tunnel junctions. The good reproducibility of these effects with respect to the changes observed allows the proper annealing treatment to be used for postprocess tuning of tunnel junction parameters. Also, the influence of the annealing treatment on the noise properties of the transistors at low frequency was investigated. In no case did the noise figures in the 1/f regime show significant changes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389077
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  • 5
    Electronic Resource
    Electronic Resource
    Microstructure and properties of giant magnetoresistive granular Au80Co20 alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3381-3387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between microstructure and giant magnetoresistance (GMR) of granular Au80Co20 was investigated. Two different processing routes were explored. With the melt spinning technique the microstructure appeared to be so coarse that it was not expected to exhibit any substantial GMR effect. On the other hand, with the procedure of solid-solution annealing and water quenching afterwards, a suitable nanostructure was prepared that showed a GMR of 29% at 10 K and 50 kOe. Subsequent annealing causes coarsening of Co particles. In additional spinodal decomposition occurred for a certain temperature range and a loss of coherency of the Co particles with respect to the Au was observed with high-resolution transmission energy microscopy. At magnetic fields above ∼20 kOe, all annealed alloys showed a saturating magnetization, whereas the resistance is still steadily decreasing, challenging the presumed mathematical relationship between GMR and overall magnetization. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325381
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  • 6
    Electronic Resource
    Electronic Resource
    Concurrent measurement of adhesive and elastic surface properties with a new modulation technique for scanning force microscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2765-2771 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The combination of two well-established dynamic scanning force microscopy (SFM) modes is incorporated for SFM in combined dynamic X mode or CODY Mode® SFM. A vertical modulation of low frequency and large amplitude is superimposed with a second vertical modulation of high frequency and low amplitude leading to a combination of pulsed force mode SFM, force modulation, and phase sensitive SFM. SFM in the new mode allows the simultaneous mapping of a number of physical surface properties including adhesive force and elasticity over one scan. The new SFM technique is nondestructive and alteration or even destruction of the sample surface is reduced to a minimum. A polymer blend (two homopolymers spin coated on silicon from a tetrahydrofuorane solution of a mixture of poly-2-vinylpyridin and polytertbutylmethacrylate) was used as a sample for comparative measurements between pulsed force mode, force modulation mode and the new SFM mode. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150689
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  • 7
    Electronic Resource
    Electronic Resource
    Design and performance of a versatile, cost-effective microwave electron cyclotron resonance plasma source for surface and thin film processing : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1177-1180 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A plasma source has been developed, which makes use of electron cyclotron microwave resonance conditions without cost-intensive tuning or other active elements. A magnetron typical of domestic microwave ovens is coupled to a cylindrical resonator of fixed dimensions. A high density plasma is maintained with permanent magnets. Sources have been designed for both high vacuum and ultrahigh vacuum environments. In the latter, microwaves are conducted by a coaxial feedthrough from the resonator to a ceramic plasma cup inside the vacuum chamber. This permits shorter working distances, resulting in higher beam densities at the sample. Ions are extracted from the plasma by grid assemblies. Beam energies are in the range from 30 to 2000 eV, with densities from a few μA/cm2 up to 10 mA/cm2, respectively. Predominantly neutral species are emitted using a specially designed, ceramic grid. Operating with O2 gas, a flux of neutral monomers of 2×1016/cm2 s has been measured by the oxidation of Ag films. The performance of the source is demonstrated in various surface and thin film processes, like ion beam sputtering, reactive ion beam deposition, as well as sputter cleaning and reactive etching of semiconductor materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150420
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  • 8
    Electronic Resource
    Electronic Resource
    Design and performance of a THz emission and detection setup based on a semi-insulating GaAs emitter (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1715-1719 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have built a relatively simple, highly efficient, THz emission and detection system centered around a 15 fs Ti:sapphire laser. In the system, 200 mW of laser power is focused to a 120 μm diam spot between two silverpaint electrodes on the surface of a semi-insulating GaAs crystal, kept at a temperature near 300 K, biased with a 50 kHz, ±400 V square wave. Using rapid delay scanning and lock-in detection at 50 kHz, we obtain probe laser quantum-noise limited signals using a standard electro-optic detection scheme with a 1-mm-thick (110) oriented ZnTe crystal or a (110) oriented 0.1-mm-thick GaP crystal. The maximum THz-induced differential signal that we observe is ΔI/I=7×10−3, corresponding to a THz peak amplitude of 95 V/cm. The THz average power was measured to be about 40 μW, to our knowledge, the highest power reported so far generated with Ti:sapphire oscillators as a pump source. The system uses off-the-shelf electronics and requires no microfabrication techniques. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459095
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  • 9
    Electronic Resource
    Electronic Resource
    High pressure hydrogen loading cell for photoconductivity measurements down to the milliKelvin regime (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 119-123 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A gas loading cell has been developed to load rare earth thin film samples with hydrogen at pressures up to 200 bars at room temperature. A miniature valve closes the gas inlet, after which the cell is suspended from the cold tail of a 3He flow cryostat into the bore of a 16 T superconducting magnet. An ultraviolet stroboscope outside the cryostat illuminates the sample by way of an optical fiber to a window in the cell. Electrical feedthroughs permit photoconductivity and magnetotransport measurements over three decades in temperature. Extension to other materials, different gas atmospheres, and helium dilution refrigerator temperatures is straightforward. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425775
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  • 10
    Electronic Resource
    Electronic Resource
    Lock-in technique for concurrent measurement of adhesion and friction with the scanning force microscope (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 150-156 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Regardless of all the great progress in new scanning probe microscopy techniques, the concurrent measurement of adhesive and frictional forces with local resolution using scanning force microscopy (SFM) has not been possible until now. In this paper, we present a novel scanning probe microscopy mode, called combined dynamic x mode or CODYMode®. In CODYMode® SFM at least two oscillations with sufficiently different frequencies and amplitudes are superimposed and interact with the sample surface. This enables the concurrent measurement of the topography, adhesive and frictional forces beside further mechanical surface properties of the sample. By means of the characterization of plasma treated biaxially oriented polypropylene foils the benefits of the new modulation technique are pointed out where common SFM techniques are not adequate. As second application high-velocity friction experiments (in the range of several centimeters per second) on silicon under controlled environmental conditions are introduced and the role of the native water film on it is discussed under friction and viscoelastic aspects. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329898
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