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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3004-3006 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The enhanced positive magnetoresistance effect has been observed in GaAs containing nanoscale magnetic clusters. The ferromagnetic metallic clusters were embedded into GaAs by Mn ion implantation and rapid thermal annealing. Positive magnetoresistance in these structures has been observed and attributed to the enhanced geometric magnetoresistance effect in inhomogeneous semiconductors with metallic inclusions. The additional enhancement of positive magnetoresistance under light illumination is due to the higher mobility of photoexcited electrons in comparison with the mobility of holes in p-type GaAs prepared by Mn ion implantation. © 2001 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 11 (2001), S. 686-704 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Perturbed wave equations are considered. Approximate general solutions of these equations are constructed, which describe wave phenomena in different physical and chemical systems. Analogies between surface waves, nonlinear and atom optics, field theories and acoustics of the early Universe can be seen in the similarities between the general solutions that govern each system. With the help of the general solutions and boundary conditions and/or resonant conditions we have derived the basic highly nonlinear ordinary differential equation or the basic algebraic equation for traveling waves. Then, approximate analytic resonant solutions are constructed, which describe the trans-resonant transformation of harmonic waves into traveling shock-, jet-, or mushroom-like waves. The mushroom-like waves can evolve into cloud-like and vortex-like structures. The motion and oscillations of these waves and structures can be very complex. Under parametric excitation these waves can vary their velocity, stop, and change the direction of their motion. Different dynamic patterns are yielded by these resonant traveling waves in the x–t and x–y planes. They simulate many patterns observed in liquid layers, optical systems, superconductors, Bose–Einstein condensates, micro- and electron resonators. The harmonic excitation may be compressed and transformed inside the resonant band into traveling or standing particle-like waves. The area of application of these solutions and results may possibly vary from the generation of nuclear particles, acoustical turbulence, and catastrophic seismic waves to the formation of galaxies and the Universe. In particular, the formation of galaxies and galaxy clusters may be connected with nonlinear and resonant phenomena in the early Universe. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 790-793 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) measurements have been carried out to investigate the effects of the band-tail states on the exciton lines in unintentionally doped and Mg-doped GaN epilayers grown on sapphire substrates by using plasma-assisted molecular beam epitaxy. The results of the PL spectra for the Mg-doped epilayers show that the peak positions of the bound exciton lines shift to higher energy with increasing temperature within the low-temperature region. The radiative recombinations of the carriers are related to the band-tail states, and the temperature-dependent blueshifts are analyzed by using a Gaussian distribution of charged impurities. The calculated thermal activation energies of the band-edge emission lines show that those lines in Mg-doped GaN epilayers are related to ionized donor bound exciton recombinations. These results indicate that the positions and the intensities of the exciton peaks observed in Mg-doped GaN films are significantly affected by the concentration of the magnesium dopant. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2013-2015 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface passivation of undoped p-CdTe(100) by (NH4)2Sx treatment was investigated by using photoluminescence (PL), photoconductivity (PC), and x-ray photoelectron spectroscopy (XPS). After sulfur treatment for 2 min, the acceptor bound exciton (A0, X) peak increases greatly in the PL spectrum, and the minority-carrier lifetime of CdTe becomes the longest value in the PC measurement. The XPS spectrum for untreated CdTe shows the additional peaks on the right side of two main Te peaks corresponding to the Te 3d core levels, and these additional peaks are related to TeO3 with binding energies of 576.2 and 586.5 eV. After sulfur treatment, while the intensities of the Te 3d core levels decreased gradually, those of the TeO3 peaks disappear. In addition, the S 2p core-level spectra for sulfur-treated CdTe show the peaks at the 161.7 and 162.8 eV, which are attributed to a CdS formation at the surface of CdTe. These results indicate the sulfur effectively dissociates the native oxides from and neutralizes the dangling bonds at the surface of CdTe. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3897-3899 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hysteresis loops of exchange-biased FeMn/Co bilayers have been measured by means of a superconducting quantum interference device magnetometer. The obtained right and left coercivities exhibit different temperature dependences. With temperature increasing, the left coercivity monotonously increases while the right one remains almost constant until a critical temperature Ti. Upon decreasing the thickness of the antiferromagnet (AF) layer, Ti decreases. The asymmetric behavior of the right and left coercivities indicates that the reversal mechanisms are different for increasing and decreasing field. By taking into account the temperature dependence of the spin alignment in the AF layer, the unusual asymmetric behavior is well explained. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3747-3749 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated one- and two-dimensional (1D and 2D) arrays of tunnel junctions with various sizes and geometries in a partial Coulomb blockade regime. To interpret the observed data, we have utilized the phase correlation theory. We demonstrate, both by experiment and by theoretical calculations in simple geometries that, due to the weaker effect of the electromagnetic environment in 1D arrays, such structures are better than their 2D counterparts for Coulomb blockade thermometry. Yet in both 1D and 2D, the influence of the environment can be made arbitrarily small by making the array sufficiently large. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2731-2733 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the coercivity in biased FeMn/Co bilayers is investigated. An asymmetric behavior of the left and right coercivity with varying temperature is observed. The asymmetry can be understood by taking into account the variation of the spin arrangements in the antiferromagnetic layer. The calculated results are in agreement with the experimental ones qualitatively. All these results suggest that the magnetization reversal mechanisms are different for increasing and decreasing fields. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1309-1311 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epilayers grown by molecular beam epitaxy were photoelectrochemically (PEC) oxidized in an aqueous KOH solution. The oxidation effect was investigated by defect-related photoconductivity and photoluminescence. The PEC treated GaN show decreased extrinsic photoresponse and concentration of deep level states in comparison with the as-grown sample. The PEC process also results in enhanced donor-bound exciton photoluminescence at 3.47 eV and restrained 3.4 eV band. No strain is detected in the PEC oxidized GaN. The 3.4 eV band is related to structural defects instead of oxygen impurities. Rather, the defects can be passivated by the PEC oxidation. © 2001 American Institute of Physics.
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