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  • American Institute of Physics (AIP)  (4)
  • 2000-2004
  • 1995-1999  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear response of two-dimensional electron plasmas in the conduction channels of field effect transistor structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2083-2088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The response of an electron gas in a quasitwo-dimensional conduction channel depends on a characteristic frequency ω0, defined as the ratio of the plasma wave velocity to the channel length. For a short-gate high electron mobility transistor ω0 can be in the terahertz range. We have used a self-consistent hydrodynamic model of the confined electron plasma to show that significant nonlinear effects are present in its response to harmonic signals at microwave frequencies much lower than ω0. We obtain the oscillatory time dependence of the terminal currents and study the interior dynamics of the electron plasma. We find that in certain device parameter ranges the essential nonlinearity in the microwave response may lead to nonlinear hydrodynamic effects, such as shock wave propagation in the conduction channel. When the boundary conditions at the source and drain terminals are asymmetric, the nonlinear plasma oscillations result in a nonzero dc component of the terminal current, which could be measured by using standard microwave circuits. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371013
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  • 2
    Electronic Resource
    Electronic Resource
    Equilibrium island ridge arrays in strained solid films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5530-5536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The equilibrium shape and chemical potential of an array of island ridges in an epitaxially strained solid film are determined from a continuum model describing the Stranski–Krastonow morphology of a thin layer on a substrate. This model incorporates the conditions for mechanical and chemical equilibrium, isotropic surface energy, and misfit strain. Solutions corresponding to periodic arrays of island ridges separated by wetting layers are found in the limit of island height much less than the island width. Our results describe how the island width, shape, and chemical potential vary as the distance between the ridges varies. The scaled island shape is shown to remain relatively constant as the distance between the islands increases. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371556
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  • 3
    Electronic Resource
    Electronic Resource
    Charge-ring model for the charge-induced confinement enhancement in stacked quantum-dot transistors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3429-3431 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is proposed to explain the charge-induced confinement enhancement observed in a stacked quantum-dot transistor that has a floating dot on top of a channel quantum dot. The model assumes that the charge on the floating dot distributes on its rim, forming a ring and creating a confinement potential that squeezes the electrons in the channel dot toward its center. The charge on the floating dot can be calculated from the device geometry and from the measured threshold voltage difference before and after the charging. Given the charge on the floating dot, the spatial confinement and the energy level spacing increase induced by the charging can be obtained. The calculation based on the model agrees with the observed increase of the energy level spacing.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122787
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  • 4
    Electronic Resource
    Electronic Resource
    Hypersound generation by resonant-tunneling structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 341-343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of hypersound generation by means of a double-barrier resonant-tunneling structure is suggested. The intensity of the generated sound is estimated. Prospects for phonon spectroscopy and acoustoelectronics based on the resonant-tunneling devices are suggested. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115438
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