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  • 1
    Electronic Resource
    Electronic Resource
    Elastic Moduli and Hardness of Cubic Silicon Nitride (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The bulk modulus B0= 290(5) GPa and its first pressure derivative B′0= 4.9(6) were obtained for c-Si3N4 from volume versus pressure dependence. Measurements were performed under quasi-hydrostatic conditions in a diamond anvil cell to 53 GPa using synchrotron radiation and energy dispersive X-ray powder diffraction. This combined with nanoindentation measurements determined the shear modulus G0 of c-Si3N4 to be 148(16) GPa. The Vickers microhardness HV(0.5) for dense, oxygen-free c-Si3N4 was estimated to be between 30 and 43 GPa. Both the elastic moduli and microhardness of c-Si3N4 exceed those of the hexagonal counterparts, α- and β-phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00044.x
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  • 2
    Electronic Resource
    Electronic Resource
    Aluminum Nitride Prepared by Nitridation of Aluminum Oxide Precursors (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Aluminum nitride (AlN) powders were prepared from the oxide precursors aluminum nitrate, aluminum hydroxide, aluminum 2-ethyl-hexanoate, and aluminum isopropoxide (i.e., Al(NO3)3, Al(OH)3, Al(OH)(O2CCH(C2H5)(C4H9))2, and Al(OCH(CH3)2)3). Pyrolyses were performed in flowing dry NH3 and N2 at 1000°–1500°C. For comparison, the nitride precursors aluminum dimethylamide (Al(N(CH3)2)3) and aluminum trimethylamino alane (AlH3·N(CH3)3) were exposed to the same nitridation conditions. Products were investigated using XRD, TEM, EDX, SEM, and elemental analysis. The results showed that nitridation was primarily controlled by the water:ammonia ratio in the atmosphere. Single-phase AlN powders were obtained from all oxide precursors. Complete nitridation was not obtained using pure N2, even for the non-oxide precursors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00595.x
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  • 3
    Electronic Resource
    Electronic Resource
    Crystallization Behavior of Amorphous Silicon Carbonitride Ceramics Derived from Organometallic Precursors (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The crystallization behavior of organometallic-precursor-derived amorphous Si-C-N ceramics was investigated under N2 atmosphere using X-ray diffractometry (XRD), transmission electron microscopy (TEM), and solid-state 29Si nuclear magnetic resonance (NMR) spectroscopy. Amorphous Si-C-N ceramics with a C/Si atomic ratio in the range of 0.34–1.13 were prepared using polycarbosilane-polysilazane blends, single-source polysilazanes, and single-source polysilylcarbodiimides. The XRD study indicated that the crystallization temperature of Si3N4 increased consistently with the C/Si atomic ratio and reached 1500°C at C/Si atomic ratios ranging from 0.53 to 1.13. This temperature was 300°C higher than that of the carbon-free amorphous Si-N material. In contrast, the SiC crystallization temperature showed no clear relation with the C/Si atomic ratio. The TEM and NMR analyses revealed that the crystallization of amorphous Si-C-N was governed by carbon content, chemical homogeneity, and molecular structure of the amorphous Si-C-N network.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb00983.x
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