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Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy (1999)

Dekker, J. ; Tukiainen, A. ; Xiang, N. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 3709-3713

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Time resolved photoluminescence and deep level transient spectroscopy have been used to monitor the effect of rapid thermal annealing on bulk GaInP and GaInP/AlGaInP quantum wells grown by solid source molecular beam epitaxy similar to those used in 650 nm range lasers. Following rapid thermal annealing at temperatures up to 875 °C, reductions in the concentration of several deep level traps are observed. Correlation of these data with photoluminescent intensity and lifetime measurements indicate that the defect labeled N3, 0.83 eV below the conduction band, is the dominant recombination center. The combination of these two transient spectroscopy measurement techniques is therefore not only able to measure the change in deep level concentration, but also to correlate this change with improved carrier lifetimes and, ultimately, reduced threshold current densities in quantum well lasers. There is also evidence to suggest that this same defect, possibly a phosphorous vacancy or a related complex, plays an important role in other GaInP based devices. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.371283

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Digitale Medien

Calculated electromigration wind force in face-centered-cubic and body-centered-cubic metals (1998)

Dekker, J. P. ; Lodder, A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 1958-1962

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The wind force has been calculated for most of the face-centered-cubic and body-centered-cubic metals of the Periodic Table. Both self-electromigration and impurity migration have been considered. The migration has been treated as the motion of an atom to a neighboring vacancy. The calculations are done using a state-of-the-art code for the electronic structure of a dilute alloy. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.368327

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Digitale Medien

Majority carrier traps in proton-irradiated GaInP (1998)

Dekker, J. R. ; Tukiainen, A. ; Jaakkola, R.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 3559-3561

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The majority carrier traps formed in p-GaInP following room temperature irradiation with 3.1 MeV protons have been investigated using deep level transient Fourier spectroscopy. The radiation damage consists of several closely spaced peaks, one of which may have existed in the as-grown material. Energy levels of three of these new traps are reported although in the presence of such closely spaced peaks the energy parameters could only be reliably measured after annealing was used to eliminate shoulder peaks. The spectrum and its annealing behavior are explainable in terms of GaP and InP levels being superimposed. Among the observed peaks, two of the radiation induced levels have been associated with a gallium vacancy defect and a phosphorous Frenkel. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.122806

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A pathway for mitotic chromosome formation (2018)

Gibcus, J. H., Samejima, K., Goloborodko, A., Samejima, I., Naumova, N., Nuebler, J., Kanemaki, M. T., Xie, L., Paulson, J. R., Earnshaw, W. C., Mirny, L. A., Dekker, J.

American Association for the Advancement of Science (AAAS)

In: Science

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Publikationsdatum: 2018-02-10

Beschreibung: Mitotic chromosomes fold as compact arrays of chromatin loops. To identify the pathway of mitotic chromosome formation, we combined imaging and Hi-C analysis of synchronous DT40 cell cultures with polymer simulations. Here we show that in prophase, the interphase organization is rapidly lost in a condensin-dependent manner, and arrays of consecutive 60-kilobase (kb) loops are formed. During prometaphase, ~80-kb inner loops are nested within ~400-kb outer loops. The loop array acquires a helical arrangement with consecutive loops emanating from a central "spiral staircase" condensin scaffold. The size of helical turns progressively increases to ~12 megabases during prometaphase. Acute depletion of condensin I or II shows that nested loops form by differential action of the two condensins, whereas condensin II is required for helical winding.

Schlagwort(e): Cell Biology, Molecular Biology, Online Only

Print ISSN: 0036-8075

Digitale ISSN: 1095-9203

Thema: Biologie , Chemie und Pharmazie , Geologie und Paläontologie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik

Publiziert von American Association for the Advancement of Science (AAAS)

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