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  • ZBW – Leibniz Information Centre for Economics Kiel, Hamburg  (73)
  • American Institute of Physics (AIP)  (72)
  • 1
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    Heidelberg: Springer | ZBW – Leibniz Information Centre for Economics Kiel, Hamburg
    Publication Date: 2018-09-10
    Description: Der Vorschlag, mehr Arbeitsplätze im Niedriglohnbereich durch Entlastungen bei den Sozialabgaben zu schaffen, ist auf Kritik gestoßen. Welche Überlegungen liegen diesem Ansatz zugrunde? Kann hierdurch die Arbeitslosigkeit abgebaut werden?
    Keywords: ddc:330
    Repository Name: EconStor: OA server of the German National Library of Economics - Leibniz Information Centre for Economics
    Language: German
    Type: doc-type:article
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  • 2
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    Heidelberg: Springer | ZBW – Leibniz Information Centre for Economics Kiel, Hamburg
    Publication Date: 2018-09-10
    Description: Ende 1999 formulierte das Bundesverfassungsgericht in einem Urteil wichtige Anforderungen an das Länderfinanzausgleichssystem. Welche Konsequenzen ergeben sich hieraus für eine Reform des Länderfinanzausgleichs? Professor Fritz Söllner macht vor diesem Hintergrund einen Reformvorschlag.
    Keywords: ddc:330 ; Horizontaler Finanzausgleich ; Rechtsprechung ; Finanzreform ; Deutschland
    Repository Name: EconStor: OA server of the German National Library of Economics - Leibniz Information Centre for Economics
    Language: German
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  • 3
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    Heidelberg: Springer | ZBW – Leibniz Information Centre for Economics Kiel, Hamburg
    Publication Date: 2018-09-05
    Keywords: ddc:330 ; Steuersystem ; Steuerreform ; Russland
    Repository Name: EconStor: OA server of the German National Library of Economics - Leibniz Information Centre for Economics
    Language: English
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7802-7804 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we present a simple method for the determination of the absolute internal quantum efficiency of thin organic dye layers. The basic idea is the comparison of the luminescence of the film with the reflection of a white diffusive reflectance standard measured at one angle with a simple spectrofluorometer. The method is compared to the procedure of de Mello [J. C. de Mello, H. F. Wittmann and R. H. Friend, Adv. Mater. 9, 230 (1997)], which uses an integrating sphere. As examples, the quantum yields of films of the two perylene derivatives N,N′-dimethylperylene-3,4:9,10-dicarboximide and 3,4,9,10-perylenetetracarboxylic dianhydride, are determined. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4744-4745 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For the quasicontinuous potentiostatic electrodeposition of compound semiconductors, up to four injection anodes of different and differently changing resistances were used simultaneously. The design of an automatic current control unit to keep the relative anodic currents constant is shown. To allow for dynamic adjustment of the working potential, a ramp generator is added. The all-in-one design facilitates completely oscillation-free operation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3863-3865 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the course of research on the electrodeposition of ternary compound semiconductors the problem of electrolysis with up to four anodic partial current circuits arose, having different and differently changing resistances. The potential at the cathode as well as the ratio of the anodic partial currents had to be regulated. In order to handle this problem we developed an automatic electronic regulating unit, the circuit diagram of which is presented.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A small 2.45 GHz ion/free radical source that has been specifically designed for MBE applications is described. The overall outside diameter of this cylindrical source is 5.8 cm (includes magnets and applicator) and the length is less than 15 cm. Thus, it fits through vacuum ports on existing MBE machines and can be placed near the substrate. The microwave discharge, which is created within a cylindrical quartz tube, is surrounded by rare-earth magnets and a tunable coaxial cavity applicator. Single or double accelerating grids can be placed on the 3.75-cm-diam discharge output producing an ion beam, or the discharge can be freely exhausted into the vacuum allowing the charged and excited species to diffuse onto the substrate for plasma and/or free radical processing. This device can operate at pressures as low as 10−5 Torr with A, O2, and N2 gases using only 50–150 W of incident power. The detailed description and the preliminary experimental test of this source is discussed.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film's elastic modulus is determined. This value is in good agreement with those reported for silicon-carbide films deposited using conventional dual-source chemical-vapor deposition. Additionally, we comment on the feasibility of integrating this process into the fabrication technology for microelectromechanical systems. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 729-731 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that doping of the transport layers can strikingly improve the properties of organic light emitting diodes (OLEDs). The electroluminescence onset voltage of diodes containing an vanadyl–phthalocyanine (VOPc) hole transport layer intentionally doped with tetrafluorotetracyano-quinodimethan (F4-TCNQ) is reduced by up to an order of magnitude compared to OLED with undoped VOPc. The improved properties of our devices can be explained by the improved conductivity and better injection for a doped transport layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2352-2354 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electric-field dependent band-gap energy and near-gap absorption coefficient of a specially designed strained-layer superlattice (SLS) employing tensile strained quantum wells and having a band-gap wavelength near 1.3 μm. The SLS was grown by molecular-beam epitaxy on an InP substrate and consists of In0.43Ga0.57As wells (4.5-nm-thick) and In0.6Al0.4As barriers (6.75-nm-thick). For applied fields from zero up to at least 2.5×105 V/cm, the band-edge absorption exhibits a single peak, which we attribute to a field-independent superpositioning of the heavy- and light-hole ground states. This result agrees with tunneling resonance calculations, which predict these hole states to have the same zero-field energy and to undergo nearly identical Stark shifts. Absorption–coefficient changes of up to 104 cm−1 were readily achieved with applied biases under 15 V, suggesting potential applications to optical modulator devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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