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  • American Institute of Physics (AIP)  (3)
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs metal-semiconductor field-effect transistors (MESFETs) and other integrated-circuit elements were characterized by including extensive process test sites on wafers with digital logic and memory circuits. A self-aligned, refractory-gate enhancement/depletion (E/D) process was employed which included 47SiF+ channel and source/drain implants, capless arsenic overpressure furnace annealing, WSi0.11 gate metal with in situ sputter cleaning, Ni-Au-Ge ohmic contacts, Si3N4 or SiO2 insulation, and Ni-Au wiring. On-water threshold voltage standard deviations as low as 31 mV for 1-μm E-FETs and 49 mV for 1-μm D-FETs were measured using 51-mm standard semi-insulating liquid-encapsulated Czochralski GaAs substrates. Threshold voltage control from wafer to wafer was of order 100 mV. Schottky diode barrier height was about 0.73 eV with an ideality of 1.2, although small self-aligned Schottky gates often showed excess conduction believed to occur at the gate edges. FET square-law coefficient, subthreshold leakage, gate capacitance, backgating, contact resistance, and wiring and insulation characteristics were also measured and found satisfactory. Fully functional 1-μm gate E/D MESFET circuits including a 4×4 bit multiplier, a 4×4 crosspoint switch, a 448-bit static RAM, and an integrated photodiode amplifier were demonstrated.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pairing of solute atoms in solution-hardened binary and ternary face-centered cubic (fcc) binary and ternary Cu alloys has been investigated with the EXAFS (extended x-ray-absorption fine structure) technique using synchrotron radiation. Two binary Cu alloys, one containing 6 at. % Ni and the other 6 at. % Pd and a ternary Cu alloy containing 3 at. % Ni and 3 at. % Pd alloy were studied. The solute concentration in each system was chosen below that (8.33 at. %) required for finding one solute-solute pair in the first coordination sphere in the fcc structure. Detailed simulations of the experimental EXAFS signal arising from the first coordination shell of the Ni and Pd solute atoms in these alloys give the following results: (i) In both binary and ternary alloys, Ni is coordinated by 12 Cu host atoms at a distance equal to sum of the Goldschmidt radii. There is little evidence for Ni-Ni pairing. (ii) On the other hand, Pd-Pd pairing is found in both the binary and ternary systems. In addition, chemical interaction with the Cu matrix is evident from the Pd-Cu separation of 2.60 A(ring) which is ∼0.05 A(ring) shorter than the sum of their Goldschmidt radii. (iii) Finally, there is no pairing of Ni-Pd solute atoms in the ternary alloy.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use, transportation, and storage of the hazardous gas, arsine, raise serious safety issues. Consequently, there is considerable interest in the generation of arsine on demand from less hazardous substances. We report the first use of in situ generated arsine for III-V epitaxy. The gas has been generated electrochemically at an arsenic cathode in an aqueous electrolyte and used to supply a hydride vapor phase epitaxy reactor. InGaAs/InP test structures were grown on InP substrates and were similar to comparison structures grown using tank arsine. Recessed-gate enhanced Schottky metal-semiconductor field-effect transistors were fabricated and exhibited well-behaved current-voltage characteristics.
    Type of Medium: Electronic Resource
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