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  • American Institute of Physics (AIP)  (1)
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  • American Institute of Physics (AIP)  (1)
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 310-317 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of tin and cadmium doping of liquid-phase epitaxial grown InGaAsP layers have been investigated. A change in the solid composition of the quaternary is introduced as a result of the perturbation of the liquid solution composition by the dopants. This leads to a change in the lattice constant and a shift of the photoluminescence peak wavelength of the doped layers. Impurity band formation and band filling enhance the shift of the peak wavelength towards shorter wavelength in the case of tin doping while it substantially counteracts this shift in the case of cadmium. The critical carrier concentration for obtaining maximum luminescence efficiency was determined for the two dopants and the results are consistent with previously published results on InGaAsP/InP double heterostructure lasers. Unintentionally doped InGaAsP layers have also been examined.
    Type of Medium: Electronic Resource
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